DE9203000U1 - Halbleiteranordnung mit mehreren Halbleiterkörpern - Google Patents

Halbleiteranordnung mit mehreren Halbleiterkörpern

Info

Publication number
DE9203000U1
DE9203000U1 DE9203000U DE9203000U DE9203000U1 DE 9203000 U1 DE9203000 U1 DE 9203000U1 DE 9203000 U DE9203000 U DE 9203000U DE 9203000 U DE9203000 U DE 9203000U DE 9203000 U1 DE9203000 U1 DE 9203000U1
Authority
DE
Germany
Prior art keywords
conductor tracks
semiconductor
connecting conductors
width
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9203000U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
EUPEC GmbH
Original Assignee
Siemens AG
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, EUPEC GmbH filed Critical Siemens AG
Priority to DE9203000U priority Critical patent/DE9203000U1/de
Publication of DE9203000U1 publication Critical patent/DE9203000U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Power Conversion In General (AREA)
DE9203000U 1992-03-06 1992-03-06 Halbleiteranordnung mit mehreren Halbleiterkörpern Expired - Lifetime DE9203000U1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9203000U DE9203000U1 (de) 1992-03-06 1992-03-06 Halbleiteranordnung mit mehreren Halbleiterkörpern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE9203000U DE9203000U1 (de) 1992-03-06 1992-03-06 Halbleiteranordnung mit mehreren Halbleiterkörpern

Publications (1)

Publication Number Publication Date
DE9203000U1 true DE9203000U1 (de) 1992-06-17

Family

ID=6876943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9203000U Expired - Lifetime DE9203000U1 (de) 1992-03-06 1992-03-06 Halbleiteranordnung mit mehreren Halbleiterkörpern

Country Status (1)

Country Link
DE (1) DE9203000U1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300516A1 (de) * 1993-01-12 1994-07-14 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
EP0621635A1 (fr) * 1993-04-23 1994-10-26 Fuji Electric Co. Ltd. Module à transistor de puissance
US5459356A (en) * 1992-08-26 1995-10-17 Eupec Europeische Gesellsch F. Leistungshalbleiter Mbh & Co., Kg. Power semiconductor module having a plurality of semiconductor arrangements
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
DE10102359A1 (de) * 2001-01-19 2002-08-01 Siemens Ag Schaltungsanordnung mit in Chips angeordneten Halbleiterbauelementen
DE10333315A1 (de) * 2003-07-22 2005-03-10 Eupec Gmbh & Co Kg Leistungshalbleitermodul
DE102005007373A1 (de) * 2005-02-17 2006-08-24 Infineon Technologies Ag Leistungshalbleiterbaugruppe
EP2071626A1 (fr) * 2007-12-11 2009-06-17 ABB Research Ltd. Module semi-conducteur et dispositif de connexion

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459356A (en) * 1992-08-26 1995-10-17 Eupec Europeische Gesellsch F. Leistungshalbleiter Mbh & Co., Kg. Power semiconductor module having a plurality of semiconductor arrangements
DE4300516A1 (de) * 1993-01-12 1994-07-14 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
DE4300516C2 (de) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Leistungshalbleitermodul
US5616955A (en) * 1993-04-23 1997-04-01 Fuji Electric Co., Ltd. Power transistor module wiring structure
EP0809292A2 (fr) * 1993-04-23 1997-11-26 Fuji Electric Co. Ltd. Module de transistor à puissance
EP0809292A3 (fr) * 1993-04-23 1998-01-28 Fuji Electric Co. Ltd. Module de transistor à puissance
EP0621635A1 (fr) * 1993-04-23 1994-10-26 Fuji Electric Co. Ltd. Module à transistor de puissance
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
US5753971A (en) * 1995-06-19 1998-05-19 Siemens Aktiengesellschaft Power semiconductor module with terminal pins
EP0750344A3 (fr) * 1995-06-19 1999-04-21 Siemens Aktiengesellschaft Module semi-conducteur de puissance avec des broches de connexion
EP0750344A2 (fr) * 1995-06-19 1996-12-27 Siemens Aktiengesellschaft Module semi-conducteur de puissance avec des broches de connexion
US6940136B2 (en) 2001-01-19 2005-09-06 Siemens Aktiengesellschaft Circuit arrangement with semiconductor elements arranged in chips
DE10102359A1 (de) * 2001-01-19 2002-08-01 Siemens Ag Schaltungsanordnung mit in Chips angeordneten Halbleiterbauelementen
DE10333315A1 (de) * 2003-07-22 2005-03-10 Eupec Gmbh & Co Kg Leistungshalbleitermodul
DE10333315B4 (de) * 2003-07-22 2007-09-27 Infineon Technologies Ag Leistungshalbleitermodul
DE102005007373A1 (de) * 2005-02-17 2006-08-24 Infineon Technologies Ag Leistungshalbleiterbaugruppe
DE102005007373B4 (de) * 2005-02-17 2013-05-29 Infineon Technologies Ag Leistungshalbleiterbaugruppe
EP2071626A1 (fr) * 2007-12-11 2009-06-17 ABB Research Ltd. Module semi-conducteur et dispositif de connexion
WO2009074454A2 (fr) * 2007-12-11 2009-06-18 Abb Research Ltd Module semi-conducteur et dispositif de borne de connexion
WO2009074454A3 (fr) * 2007-12-11 2009-08-06 Abb Research Ltd Module semi-conducteur et dispositif de borne de connexion

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