DE874936C - Transister fuer Stromverstaerkung - Google Patents

Transister fuer Stromverstaerkung

Info

Publication number
DE874936C
DE874936C DEI3967A DEI0003967A DE874936C DE 874936 C DE874936 C DE 874936C DE I3967 A DEI3967 A DE I3967A DE I0003967 A DEI0003967 A DE I0003967A DE 874936 C DE874936 C DE 874936C
Authority
DE
Germany
Prior art keywords
forming
crystal
crystal triode
emitter
collector electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEI3967A
Other languages
German (de)
English (en)
Inventor
Kenneth Albert Matthews
Charles De Boismaison White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of DE874936C publication Critical patent/DE874936C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Tubes For Measurement (AREA)
  • Amplifiers (AREA)
  • Electrolytic Production Of Metals (AREA)
DEI3967A 1949-04-01 1951-03-31 Transister fuer Stromverstaerkung Expired DE874936C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8902/49A GB681809A (en) 1949-04-01 1949-04-01 Improvements in or relating to electric semi-conductors

Publications (1)

Publication Number Publication Date
DE874936C true DE874936C (de) 1953-04-27

Family

ID=9861517

Family Applications (1)

Application Number Title Priority Date Filing Date
DEI3967A Expired DE874936C (de) 1949-04-01 1951-03-31 Transister fuer Stromverstaerkung

Country Status (4)

Country Link
US (1) US2653374A (en, 2012)
DE (1) DE874936C (en, 2012)
GB (1) GB681809A (en, 2012)
NL (1) NL89623C (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1054591B (de) * 1955-02-04 1959-04-09 Western Electric Co Verfahren zur Feststellung der genauen Lage eines UEberganges zwischen den aneinandergrenzenden Teilen von Zonen mit entgegen-gesetztem Leitfaehigkeitstyp in einem halbleitenden Koerper
DE1067933B (de) * 1955-12-22 1959-10-29 National Research Development Corporation, London; Vcrtr.: Dipl.-Ing. E. Schubert, Pat.-Anw., Siegen Gesteuerte Halbleiteranordnung mit zwei Elektroden. 1'9. 12. 56. Großbritannien
DE1083937B (de) * 1956-04-19 1960-06-23 Intermetall Verfahren zur Herstellung von p-n-UEbergaengen in Halbleiterkoerpern durch Legieren
DE977015C (de) * 1951-11-07 1964-11-05 Ibm Deutschland Verfahren zur Herstellung von Transistoren durch elektrische Formierung
DE977615C (de) * 1950-09-14 1967-08-31 Western Electric Co Verfahren zur Herstellung eines fuer Signaluebertragungsvorrichtungen bestimmten Halbleiterelements

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2740076A (en) * 1951-03-02 1956-03-27 Int Standard Electric Corp Crystal triodes
US2793332A (en) * 1953-04-14 1957-05-21 Sylvania Electric Prod Semiconductor rectifying connections and methods
NL251064A (en, 2012) * 1955-11-04
US2875506A (en) * 1955-12-09 1959-03-03 Ibm Method of electroforming transistors
US2989670A (en) * 1956-06-19 1961-06-20 Texas Instruments Inc Transistor
US2942329A (en) * 1956-09-25 1960-06-28 Ibm Semiconductor device fabrication
US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors
US2977515A (en) * 1958-05-07 1961-03-28 Philco Corp Semiconductor fabrication
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3046458A (en) * 1959-04-23 1962-07-24 Mc Graw Edison Co Hall plate
NL113528C (en, 2012) * 1959-08-27
NL258378A (en, 2012) * 1960-07-28 1900-01-01
US3403339A (en) * 1965-09-17 1968-09-24 Hewlett Packard Yokogawa Apparatus for displaying the gain factor as a function of a changing input singnal applied to an element under test

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
NL80773C (en, 2012) * 1948-12-29 1900-01-01

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977615C (de) * 1950-09-14 1967-08-31 Western Electric Co Verfahren zur Herstellung eines fuer Signaluebertragungsvorrichtungen bestimmten Halbleiterelements
DE977015C (de) * 1951-11-07 1964-11-05 Ibm Deutschland Verfahren zur Herstellung von Transistoren durch elektrische Formierung
DE1054591B (de) * 1955-02-04 1959-04-09 Western Electric Co Verfahren zur Feststellung der genauen Lage eines UEberganges zwischen den aneinandergrenzenden Teilen von Zonen mit entgegen-gesetztem Leitfaehigkeitstyp in einem halbleitenden Koerper
DE1067933B (de) * 1955-12-22 1959-10-29 National Research Development Corporation, London; Vcrtr.: Dipl.-Ing. E. Schubert, Pat.-Anw., Siegen Gesteuerte Halbleiteranordnung mit zwei Elektroden. 1'9. 12. 56. Großbritannien
DE1083937B (de) * 1956-04-19 1960-06-23 Intermetall Verfahren zur Herstellung von p-n-UEbergaengen in Halbleiterkoerpern durch Legieren

Also Published As

Publication number Publication date
GB681809A (en) 1952-10-29
NL89623C (en, 2012)
US2653374A (en) 1953-09-29

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