DE860973C - detector - Google Patents

detector

Info

Publication number
DE860973C
DE860973C DES12433D DES0012433D DE860973C DE 860973 C DE860973 C DE 860973C DE S12433 D DES12433 D DE S12433D DE S0012433 D DES0012433 D DE S0012433D DE 860973 C DE860973 C DE 860973C
Authority
DE
Germany
Prior art keywords
germanium
layer
detector
vapor
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES12433D
Other languages
German (de)
Inventor
Otto Kleinschmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES12433D priority Critical patent/DE860973C/en
Application granted granted Critical
Publication of DE860973C publication Critical patent/DE860973C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Description

Es ist bereits vorgeschlagen worden, den Kristall eines Detektors .aus Germanium herzustellen, da sich hierbei eine sehr zufriedenstellende Richtwirkung ergibt. Hierbei wird in der Riegel von einem massiven Stück aus Germanium Gebrauch gemacht, welches durch Gießen hergestellt wird. "Es wurde auch schon versucht, den Gußteil aus Germanium durch einte auf einen Träger ;aus Kohle aufgedampfte Schicht zu ersetzen, doch ist diese Bauart nicht besonders befriedigend, weil die Befestigung der Kohlekörper Schwierigkeiten macht.It has already been proposed to use the crystal of a detector . Manufactured from germanium, as this results in a very satisfactory directivity results. A solid piece of germanium is used in the bar made, which is made by casting. "We have already tried that Casting of germanium by one on a support; layer of carbon vapor-deposited to replace, but this type of construction is not particularly satisfactory because of the attachment the carbon body causes difficulties.

Die Erfindung beruht nun auf der Erkenntnis" daß man besonders gute Richtleiter dann @erhältr wenn man das im wesentlichen aus Germanium bestehende Richtleitermaterial auf eine metallische Unterlage aufdampft. Man erhält dadurch nicht nur eine sehr gute Richtwirkung, sondern gewinnt auch eine einfache feste Konstruktion.The invention is based on the knowledge "that you are particularly good Richtleiter then @ received if one consists essentially of germanium Directional conductor material vapor-deposited on a metallic base. This gives you Not only does it have a very good directivity, it also gains a simple solid one Construction.

Ein Ausführungsbeispiel für den Erfindungsgegenstand-ist in der Figur schematisch dargestellt. Der metallische, mit dem Richtleitermaterial bedeckte Schichtträger ist mit i bezeichnet. Auf ihm sitzt Beine Schicht a aus Germanium .oder einer Mischung aus Germanium und einem anderen Metall, insbesondere Silber oder Zinn. Die Dicke der Schicht beträgt vorzugsweise einige My. Sie muß mindestens in der Größenordnung des Durchmessers der Metallauflage 3, de auf der Schicht aufliegender Teilces der Detektorspitze ¢, sein, da man sonst einen zu niedrigen Sperrwiderstand erhält. Der Schichtträger. und der Halter 5 für die Dietektorspitze, in welcher der die Spitze tragende Stift 6 mittels :eines Lotes 7 befestigt sein kann, sind-durch einen mit den beiden Teilen i und 5 verlöteten,; rohrförmigen Keramikkörper 8 miteinander verbunden. Beim Aufdampfen des Germaniums bzw. der angegebenen Metallmischung empfiehlt es sich, die Verdampfungsgeschwindigkeit des Schichtmaterials so zu wählen, daß die Schicht bei Betrachtung im Lichtmikroskop ,ein körniges Aussehen hat. Es hat sich herausgestellt, daß solche Schichtmeine sehr gute Richtwirkung ergeben. Die Unterlage der Schichtträger kann aus einem beliebigen Metall hergestellt sein. Wird besonders gute Leitfähigkeit gewünscht, dann kann man den Träger ,aus Silber anfertigen, besonders vorteilhaft ist es, die Trägerteile aus Messing zu machen und auf dem Lochautomaten aus Stangenmaterial herzustellen.An exemplary embodiment for the subject matter of the invention is shown in the figure shown schematically. The metallic substrate covered with the directional conductor material is denoted by i. On top of it sits legs a layer of germanium. Or a mixture of germanium and another metal, especially silver or tin. The fat of the layer is preferably a few My. It must be at least of the order of magnitude the diameter of the metal plating 3, de Teilces lying on the layer of the Detector tip ¢, as otherwise the blocking resistance will be too low. The support. and the holder 5 for the Dietector tip in which the Tip-carrying pin 6 by means of: a solder 7 can be attached, are-by a soldered to the two parts i and 5; tubular ceramic body 8 together tied together. Recommended when evaporating germanium or the specified metal mixture it is to choose the evaporation rate of the layer material so that the layer, when viewed under a light microscope, has a grainy appearance. It has it has been found that such layers give my very good directivity. the The base of the substrate can be made of any metal. Will particularly good conductivity is desired, then the carrier can be made of silver, It is particularly advantageous to make the support parts from brass and on the Manufacture automatic punching machines from bar material.

Claims (1)

PATENTANSPRÜCHE: i. Detektor, bei welchem das Richtleitermaterial, ,der Kristall, aus Germanium oder einer Mischung aus Germanium mit einem oder mehreren anderen Metallen besteht, dadurch gekennzeichnet, daß das Germanium bzw. das Germanium enthaltende Metallgemisch auf einen metallischen Träger aufgedampft ist. a. Detektor nach Anspruch i, dadurch gekennzeichnet, daß die Dicke der Richtleiterschicht mindestens so groß ist, wie der Durchmesser der Fläche, mit welcher die Detektorspitze auf der Schicht aufliegt. 3. Verfahren zur Herstellung ,eures Detektors nach Anspruch i oder z, dadurch gekennzeichnet, daß die Verdampfungstemperatur bzw. Verdampfungsgeschwindigkeif des Schichtmaterials bzw. die Temperatur des Scbchtträgers beim Aufdampfen so gewählt wird, daß das aufgedampfte Schichtmaterial ;eine unter dem Mikroskop sichtbare körnige Struktur erhält.PATENT CLAIMS: i. Detector in which the directional guide material, , the crystal, made of germanium or a mixture of germanium with one or more other metals, characterized in that the germanium or the germanium containing metal mixture is vapor-deposited on a metallic carrier. a. detector according to claim i, characterized in that the thickness of the directional conductor layer is at least is as large as the diameter of the surface with which the detector tip is on the layer rests on. 3. A method of manufacturing your detector according to claim i or z, characterized in that the evaporation temperature or evaporation rate of the layer material or the temperature of the layer carrier during vapor deposition is selected in this way becomes that the vapor-deposited layer material; a grainy one visible under the microscope Structure.
DES12433D 1944-08-21 1944-08-22 detector Expired DE860973C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES12433D DE860973C (en) 1944-08-21 1944-08-22 detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0012433 1944-08-21
DES12433D DE860973C (en) 1944-08-21 1944-08-22 detector

Publications (1)

Publication Number Publication Date
DE860973C true DE860973C (en) 1952-12-29

Family

ID=25994841

Family Applications (1)

Application Number Title Priority Date Filing Date
DES12433D Expired DE860973C (en) 1944-08-21 1944-08-22 detector

Country Status (1)

Country Link
DE (1) DE860973C (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967086C (en) * 1949-04-01 1957-10-03 Licentia Gmbh Process for the production of dry rectifiers with germanium as semiconducting substance
DE1100819B (en) * 1959-03-24 1961-03-02 Siemens Ag Semiconductor device built into a cylindrical housing
DE1126515B (en) * 1960-02-12 1962-03-29 Siemens Ag Method for producing a semiconductor arrangement and semiconductor arrangement produced therefrom
DE1194984B (en) * 1958-10-23 1965-06-16 Siemens Ag Silicon carbide semiconductor device and method for manufacturing the same
DE1263197B (en) * 1964-07-04 1968-03-14 Danfoss As Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom
DE1276208B (en) * 1959-06-02 1968-08-29 Philips Nv Process for producing semiconducting bodies by vapor deposition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967086C (en) * 1949-04-01 1957-10-03 Licentia Gmbh Process for the production of dry rectifiers with germanium as semiconducting substance
DE1194984B (en) * 1958-10-23 1965-06-16 Siemens Ag Silicon carbide semiconductor device and method for manufacturing the same
DE1100819B (en) * 1959-03-24 1961-03-02 Siemens Ag Semiconductor device built into a cylindrical housing
DE1276208B (en) * 1959-06-02 1968-08-29 Philips Nv Process for producing semiconducting bodies by vapor deposition
DE1126515B (en) * 1960-02-12 1962-03-29 Siemens Ag Method for producing a semiconductor arrangement and semiconductor arrangement produced therefrom
DE1263197B (en) * 1964-07-04 1968-03-14 Danfoss As Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom

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