DE860973C - detector - Google Patents
detectorInfo
- Publication number
- DE860973C DE860973C DES12433D DES0012433D DE860973C DE 860973 C DE860973 C DE 860973C DE S12433 D DES12433 D DE S12433D DE S0012433 D DES0012433 D DE S0012433D DE 860973 C DE860973 C DE 860973C
- Authority
- DE
- Germany
- Prior art keywords
- germanium
- layer
- detector
- vapor
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Description
Es ist bereits vorgeschlagen worden, den Kristall eines Detektors .aus Germanium herzustellen, da sich hierbei eine sehr zufriedenstellende Richtwirkung ergibt. Hierbei wird in der Riegel von einem massiven Stück aus Germanium Gebrauch gemacht, welches durch Gießen hergestellt wird. "Es wurde auch schon versucht, den Gußteil aus Germanium durch einte auf einen Träger ;aus Kohle aufgedampfte Schicht zu ersetzen, doch ist diese Bauart nicht besonders befriedigend, weil die Befestigung der Kohlekörper Schwierigkeiten macht.It has already been proposed to use the crystal of a detector . Manufactured from germanium, as this results in a very satisfactory directivity results. A solid piece of germanium is used in the bar made, which is made by casting. "We have already tried that Casting of germanium by one on a support; layer of carbon vapor-deposited to replace, but this type of construction is not particularly satisfactory because of the attachment the carbon body causes difficulties.
Die Erfindung beruht nun auf der Erkenntnis" daß man besonders gute Richtleiter dann @erhältr wenn man das im wesentlichen aus Germanium bestehende Richtleitermaterial auf eine metallische Unterlage aufdampft. Man erhält dadurch nicht nur eine sehr gute Richtwirkung, sondern gewinnt auch eine einfache feste Konstruktion.The invention is based on the knowledge "that you are particularly good Richtleiter then @ received if one consists essentially of germanium Directional conductor material vapor-deposited on a metallic base. This gives you Not only does it have a very good directivity, it also gains a simple solid one Construction.
Ein Ausführungsbeispiel für den Erfindungsgegenstand-ist in der Figur schematisch dargestellt. Der metallische, mit dem Richtleitermaterial bedeckte Schichtträger ist mit i bezeichnet. Auf ihm sitzt Beine Schicht a aus Germanium .oder einer Mischung aus Germanium und einem anderen Metall, insbesondere Silber oder Zinn. Die Dicke der Schicht beträgt vorzugsweise einige My. Sie muß mindestens in der Größenordnung des Durchmessers der Metallauflage 3, de auf der Schicht aufliegender Teilces der Detektorspitze ¢, sein, da man sonst einen zu niedrigen Sperrwiderstand erhält. Der Schichtträger. und der Halter 5 für die Dietektorspitze, in welcher der die Spitze tragende Stift 6 mittels :eines Lotes 7 befestigt sein kann, sind-durch einen mit den beiden Teilen i und 5 verlöteten,; rohrförmigen Keramikkörper 8 miteinander verbunden. Beim Aufdampfen des Germaniums bzw. der angegebenen Metallmischung empfiehlt es sich, die Verdampfungsgeschwindigkeit des Schichtmaterials so zu wählen, daß die Schicht bei Betrachtung im Lichtmikroskop ,ein körniges Aussehen hat. Es hat sich herausgestellt, daß solche Schichtmeine sehr gute Richtwirkung ergeben. Die Unterlage der Schichtträger kann aus einem beliebigen Metall hergestellt sein. Wird besonders gute Leitfähigkeit gewünscht, dann kann man den Träger ,aus Silber anfertigen, besonders vorteilhaft ist es, die Trägerteile aus Messing zu machen und auf dem Lochautomaten aus Stangenmaterial herzustellen.An exemplary embodiment for the subject matter of the invention is shown in the figure shown schematically. The metallic substrate covered with the directional conductor material is denoted by i. On top of it sits legs a layer of germanium. Or a mixture of germanium and another metal, especially silver or tin. The fat of the layer is preferably a few My. It must be at least of the order of magnitude the diameter of the metal plating 3, de Teilces lying on the layer of the Detector tip ¢, as otherwise the blocking resistance will be too low. The support. and the holder 5 for the Dietector tip in which the Tip-carrying pin 6 by means of: a solder 7 can be attached, are-by a soldered to the two parts i and 5; tubular ceramic body 8 together tied together. Recommended when evaporating germanium or the specified metal mixture it is to choose the evaporation rate of the layer material so that the layer, when viewed under a light microscope, has a grainy appearance. It has it has been found that such layers give my very good directivity. the The base of the substrate can be made of any metal. Will particularly good conductivity is desired, then the carrier can be made of silver, It is particularly advantageous to make the support parts from brass and on the Manufacture automatic punching machines from bar material.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES12433D DE860973C (en) | 1944-08-21 | 1944-08-22 | detector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0012433 | 1944-08-21 | ||
DES12433D DE860973C (en) | 1944-08-21 | 1944-08-22 | detector |
Publications (1)
Publication Number | Publication Date |
---|---|
DE860973C true DE860973C (en) | 1952-12-29 |
Family
ID=25994841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES12433D Expired DE860973C (en) | 1944-08-21 | 1944-08-22 | detector |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE860973C (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE967086C (en) * | 1949-04-01 | 1957-10-03 | Licentia Gmbh | Process for the production of dry rectifiers with germanium as semiconducting substance |
DE1100819B (en) * | 1959-03-24 | 1961-03-02 | Siemens Ag | Semiconductor device built into a cylindrical housing |
DE1126515B (en) * | 1960-02-12 | 1962-03-29 | Siemens Ag | Method for producing a semiconductor arrangement and semiconductor arrangement produced therefrom |
DE1194984B (en) * | 1958-10-23 | 1965-06-16 | Siemens Ag | Silicon carbide semiconductor device and method for manufacturing the same |
DE1263197B (en) * | 1964-07-04 | 1968-03-14 | Danfoss As | Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom |
DE1276208B (en) * | 1959-06-02 | 1968-08-29 | Philips Nv | Process for producing semiconducting bodies by vapor deposition |
-
1944
- 1944-08-22 DE DES12433D patent/DE860973C/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE967086C (en) * | 1949-04-01 | 1957-10-03 | Licentia Gmbh | Process for the production of dry rectifiers with germanium as semiconducting substance |
DE1194984B (en) * | 1958-10-23 | 1965-06-16 | Siemens Ag | Silicon carbide semiconductor device and method for manufacturing the same |
DE1100819B (en) * | 1959-03-24 | 1961-03-02 | Siemens Ag | Semiconductor device built into a cylindrical housing |
DE1276208B (en) * | 1959-06-02 | 1968-08-29 | Philips Nv | Process for producing semiconducting bodies by vapor deposition |
DE1126515B (en) * | 1960-02-12 | 1962-03-29 | Siemens Ag | Method for producing a semiconductor arrangement and semiconductor arrangement produced therefrom |
DE1263197B (en) * | 1964-07-04 | 1968-03-14 | Danfoss As | Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom |
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