DE765253C - Process for the manufacture of selenium rectifiers - Google Patents
Process for the manufacture of selenium rectifiersInfo
- Publication number
- DE765253C DE765253C DEN44394D DEN0044394D DE765253C DE 765253 C DE765253 C DE 765253C DE N44394 D DEN44394 D DE N44394D DE N0044394 D DEN0044394 D DE N0044394D DE 765253 C DE765253 C DE 765253C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- rectifiers
- manufacture
- electrode
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 17
- 229910052711 selenium Inorganic materials 0.000 title claims description 16
- 239000011669 selenium Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 9
- 230000008569 process Effects 0.000 title claims description 3
- 238000004519 manufacturing process Methods 0.000 title description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 230000001476 alcoholic effect Effects 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical compound [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000000635 valve cell Anatomy 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
Die Erfindung betrifft ein Verfahren zur Herstellung vom Selengleichrichter», die sich in der Durchlaßrichtung' durch eine besonders gute Leitfähigkeit auszeichnen und die in der Sperrichtung einwandfreie Sperreigenschaffen zeigen.The invention relates to a method for the production of selenium rectifiers », which in the forward direction 'characterized by a particularly good conductivity and in the Blocking direction show impeccable blocking properties.
Es war bekannt, daß zur Erzielung guter Sperrfähigkeit auf die freie Oberfläche des Halbleiters eine Schicht aus einem isolierenden1 Lack ad!, dgl. oder aber eine Schicht nicht leitenden Selens oder einer nicht leitenden Selenverbindung aufgedampft wird. Mit der so erzielten guten Sperrfähigkeit ist jedoch keineswegs eine besonders gute Leitfähigkeit in der Durchlaßrichtung verbunden. Vielmehr geht in der Regel mit der Verbesserung der Sperrfähigkeit eine Herabsetzung der Leitfähigkeit in der Durchlaßrichtung Hand in Hand.It was known that in order to obtain good blocking ability, a layer of an insulating varnish ad 1 !, the like. However, a layer of non-conductive selenium or a non-conductive selenium compound is deposited on the free surface of the semiconductor or. However, the good blocking capability achieved in this way is by no means associated with particularly good conductivity in the forward direction. Rather, as a rule, the improvement in the blocking capability goes hand in hand with a reduction in the conductivity in the forward direction.
Das Verfahren nach der Erfindung vermeidet diesen Übelstand, indem durch einen besonderen Arbeitsgang zunächst die Leitfähigkeit des Halbleiters in der späteren Durchlaßrichtung verbessert wird und durch eine besondere Nachbehandlung die günstigen Sperreigenschaften hervorgerufen werden. Nach der Erfindung werden bei dem Verfahren zur Herstellung von SelengleichrichternThe method according to the invention avoids this disadvantage by first of all the conductivity through a special operation of the semiconductor is improved in the later forward direction and the favorable ones through a special post-treatment Locking properties are evoked. According to the invention in the method for the production of selenium rectifiers
die Gleichrichterelemente nach der Umwandlung des Selens in die leitende kristalline Form und vor dem Aufbringen der Sperroder Gegenelektrode in eine maximal 5°/oige Chlor-, Brom- oder Jodlösung getaucht, dann auf etwa 20o° C so lange erwärmt, bis das Lösungsmittel, die Halogene und deren Reaktionsprodukte mit Selen verdampft sind, darauf in eine etwa i°/oige methyl- oder äthylalkoholische Lösung von Kalium- oder Natriumselenid getaucht und abermals auf etwa 200° C erwärmt, wonach die Sperrelektrode aufgebracht wird. Vermutlich wird durch die Behandlung mit alkoholischer SeIenidlösung auf der freien Oberfläche des Halbleiters eine sehr dünne Haut nicht leitenden Selens erzeugt, welche für die guten Sperreigenschaften maßgebend ist.the rectifier elements after the selenium has been converted into the conductive crystalline Shape and before applying the blocking or counter electrode in a maximum of 5% Chlorine, bromine or iodine solution, then heated to around 20o ° C until the Solvents that contain halogens and their reaction products with selenium, then into about 10% methyl or ethyl alcohol Solution of potassium or sodium selenide dipped and reappeared heated about 200 ° C, after which the barrier electrode is applied. Presumably will by treatment with alcoholic selenium solution on the free surface of the semiconductor a very thin non-conductive selenium skin is produced, which is responsible for the good barrier properties is decisive.
Es ist vorteilhaft, die zur Verwendung gelangenden Lösungen in starker Verdünnung anzusetzen. Die Selenidlösungen sollten möglichst nicht über ι °/o Substanz in Methyloder Äthylalkohol enthalten, während in den die Leitfähigkeit erzeugenden Lösungen der Prozentgehalt des Halogens im Lösungsmittel 5% nicht übersteigen sollte. Zweckmäßig werden die getauchten Platten im nassen Zustand sofort auf eine Heizplatte gebracht.It is advantageous to use the solutions in a strong dilution to apply. The selenide solutions should not have more than ι% substance in methyl or Containing ethyl alcohol, while in the conductivity-generating solutions of the The percentage of halogen in the solvent should not exceed 5%. Appropriate the immersed plates are immediately placed on a heating plate when they are wet.
Ein besonderer Vorzug des Verfahrens nach der Erfindung ist die Möglichkeit, für das Halbleitermaterial Trägerplatten aus Leichtmetallen ohne besondere Zwischenschicht zu verwenden. Dem bekannten Vorschlag, dem Halbleiter selbst im geschmolzenen Zustand Halogenide u. dgl. zur Erhöhung der Leitfähigkeit beizufügen, haftet dieser Vorzug nicht an. Auch ändert sich die mit solchen Beimengungen zunächst erzielte Leitfähigkeit wieder mit der Umwandlung des Selens. Ein weiterer Vorzug des neuen Verfahrens liegt darin, daß man weniger abhängig von dem Selen als Ausgangsmaterial in bezug auf geringe Beimengungen ist und man vielmehr mit beliebigem Selen brauchbare Ventilzellen erhält, da man die gewünschten Eigenschaften derselben kurz vor ihrer Vollendung mit dem neuen Verfahren einstellen kann. Die Leitfähigkeit von so behandelten Selenzellen mit Leichtmetallträgerplatte ist die 20- bis ßofache derjenigen unbehandelter Gleichrichter, und zwar ohne daß es einer besonderen Zwischenschicht zwischen Trägerelektrode und Selen bedarf.A particular advantage of the method according to the invention is the possibility for the semiconductor material carrier plates made of light metals without a special intermediate layer to use. The well-known proposal, the semiconductor itself in the molten state Adding halides and the like to the condition to increase the conductivity will stick Preference not on. The conductivity initially achieved with such admixtures also changes again with the conversion of selenium. Another benefit of the new process is that you are less dependent of the selenium as a starting material with regard to small admixtures and one rather, valve cells that can be used with any selenium are obtained, since the desired ones are obtained Adjust properties of the same shortly before their completion with the new procedure can. The conductivity of selenium cells treated in this way with a light metal carrier plate is 20 to ß times that of untreated rectifiers, without any requires a special intermediate layer between the carrier electrode and selenium.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN44394D DE765253C (en) | 1940-12-23 | 1940-12-24 | Process for the manufacture of selenium rectifiers |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN0044394 | 1940-12-23 | ||
| DEN44394D DE765253C (en) | 1940-12-23 | 1940-12-24 | Process for the manufacture of selenium rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE765253C true DE765253C (en) | 1953-06-08 |
Family
ID=25989237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN44394D Expired DE765253C (en) | 1940-12-23 | 1940-12-24 | Process for the manufacture of selenium rectifiers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE765253C (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT153134B (en) * | 1936-06-13 | 1938-04-11 | Aeg | Process for the manufacture of dry plate rectifiers. |
-
1940
- 1940-12-24 DE DEN44394D patent/DE765253C/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT153134B (en) * | 1936-06-13 | 1938-04-11 | Aeg | Process for the manufacture of dry plate rectifiers. |
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