DE7235267U - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE7235267U
DE7235267U DE19727235267 DE7235267U DE7235267U DE 7235267 U DE7235267 U DE 7235267U DE 19727235267 DE19727235267 DE 19727235267 DE 7235267 U DE7235267 U DE 7235267U DE 7235267 U DE7235267 U DE 7235267U
Authority
DE
Germany
Prior art keywords
zone
control electrode
highly
semiconductor component
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19727235267
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC AG
Original Assignee
BBC AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC AG filed Critical BBC AG
Publication of DE7235267U publication Critical patent/DE7235267U/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE19727235267 1972-09-06 1972-09-25 Halbleiterbauelement Expired DE7235267U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1302972A CH549286A (de) 1972-09-06 1972-09-06 Halbleiterbauelement.

Publications (1)

Publication Number Publication Date
DE7235267U true DE7235267U (de) 1974-08-14

Family

ID=4388662

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19727235267 Expired DE7235267U (de) 1972-09-06 1972-09-25 Halbleiterbauelement
DE19722247006 Withdrawn DE2247006A1 (de) 1972-09-06 1972-09-25 Halbleiterbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19722247006 Withdrawn DE2247006A1 (de) 1972-09-06 1972-09-25 Halbleiterbauelement

Country Status (4)

Country Link
JP (1) JPS4966080A (US07585860-20090908-C00150.png)
CH (1) CH549286A (US07585860-20090908-C00150.png)
DE (2) DE7235267U (US07585860-20090908-C00150.png)
FR (1) FR2198265B3 (US07585860-20090908-C00150.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH578254A5 (US07585860-20090908-C00150.png) * 1974-12-03 1976-07-30 Bbc Brown Boveri & Cie
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
US4292646A (en) * 1977-01-07 1981-09-29 Rca Corporation Semiconductor thyristor device having integral ballast means
DE2830735C2 (de) * 1978-07-13 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung
JPS5887869A (ja) * 1981-11-20 1983-05-25 Nec Corp サイリスタ
JPS60143670A (ja) * 1984-07-28 1985-07-29 Mitsubishi Electric Corp サイリスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501990B1 (US07585860-20090908-C00150.png) * 1970-06-02 1975-01-22

Also Published As

Publication number Publication date
DE2247006A1 (de) 1974-05-09
FR2198265A1 (US07585860-20090908-C00150.png) 1974-03-29
FR2198265B3 (US07585860-20090908-C00150.png) 1976-07-16
CH549286A (de) 1974-05-15
JPS4966080A (US07585860-20090908-C00150.png) 1974-06-26

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