DE7235267U - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE7235267U DE7235267U DE19727235267 DE7235267U DE7235267U DE 7235267 U DE7235267 U DE 7235267U DE 19727235267 DE19727235267 DE 19727235267 DE 7235267 U DE7235267 U DE 7235267U DE 7235267 U DE7235267 U DE 7235267U
- Authority
- DE
- Germany
- Prior art keywords
- zone
- control electrode
- highly
- semiconductor component
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 230000007704 transition Effects 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1302972A CH549286A (de) | 1972-09-06 | 1972-09-06 | Halbleiterbauelement. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE7235267U true DE7235267U (de) | 1974-08-14 |
Family
ID=4388662
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19727235267 Expired DE7235267U (de) | 1972-09-06 | 1972-09-25 | Halbleiterbauelement |
DE19722247006 Withdrawn DE2247006A1 (de) | 1972-09-06 | 1972-09-25 | Halbleiterbauelement |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19722247006 Withdrawn DE2247006A1 (de) | 1972-09-06 | 1972-09-25 | Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4966080A (US07585860-20090908-C00150.png) |
CH (1) | CH549286A (US07585860-20090908-C00150.png) |
DE (2) | DE7235267U (US07585860-20090908-C00150.png) |
FR (1) | FR2198265B3 (US07585860-20090908-C00150.png) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH578254A5 (US07585860-20090908-C00150.png) * | 1974-12-03 | 1976-07-30 | Bbc Brown Boveri & Cie | |
SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
US4292646A (en) * | 1977-01-07 | 1981-09-29 | Rca Corporation | Semiconductor thyristor device having integral ballast means |
DE2830735C2 (de) * | 1978-07-13 | 1982-11-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung |
JPS5887869A (ja) * | 1981-11-20 | 1983-05-25 | Nec Corp | サイリスタ |
JPS60143670A (ja) * | 1984-07-28 | 1985-07-29 | Mitsubishi Electric Corp | サイリスタ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS501990B1 (US07585860-20090908-C00150.png) * | 1970-06-02 | 1975-01-22 |
-
1972
- 1972-09-06 CH CH1302972A patent/CH549286A/xx not_active IP Right Cessation
- 1972-09-25 DE DE19727235267 patent/DE7235267U/de not_active Expired
- 1972-09-25 DE DE19722247006 patent/DE2247006A1/de not_active Withdrawn
-
1973
- 1973-08-01 FR FR7328191A patent/FR2198265B3/fr not_active Expired
- 1973-08-13 JP JP9080273A patent/JPS4966080A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2247006A1 (de) | 1974-05-09 |
FR2198265A1 (US07585860-20090908-C00150.png) | 1974-03-29 |
FR2198265B3 (US07585860-20090908-C00150.png) | 1976-07-16 |
CH549286A (de) | 1974-05-15 |
JPS4966080A (US07585860-20090908-C00150.png) | 1974-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2554296C2 (de) | Integrierte C MOS-Schaltungsanordnung | |
DE2257846A1 (de) | Integrierte halbleiteranordnung zum schutz gegen ueberspannung | |
DE2047166B2 (de) | Integrierte Halbleiteranordnung | |
DE2348643A1 (de) | Integrierte schutzschaltung fuer einen hauptschaltkreis aus feldeffekttransistoren | |
DE3230741A1 (de) | Halbleiterschalter mit einem abschaltbaren thyristor | |
DE19654163A1 (de) | Schutzvorrichtung für eine Halbleiterschaltung | |
DE2234973A1 (de) | Mis-halbleitervorrichtung | |
DE2945366A1 (de) | Thyristor mit steuerbaren emitter-kurzschluessen | |
DE1464983C2 (de) | in zwei Richtungen schaltbares und steuerbares Halbleiterbauelement | |
DE1230500B (de) | Steuerbares Halbleiterbauelement mit einem Halbleiterkoerper mit der Zonenfolge NN P oder PP N | |
DE2515457C3 (de) | Differenzverstärker | |
DE7235267U (de) | Halbleiterbauelement | |
DE2149039C2 (de) | Halbleiterbauelement | |
DE2211116A1 (de) | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps | |
DE1123402B (de) | Halbleiterdiode mit mehreren PN-UEbergaengen | |
DE69834451T2 (de) | Schutzvorrichtung für einen integrierten MOS-Transistor gengen Spannungsgradienten | |
DE1208408B (de) | Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps | |
DE2742361C2 (US07585860-20090908-C00150.png) | ||
DE3112940A1 (de) | Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb | |
DE3871908T2 (de) | Lateraler hochspannungstransistor. | |
DE2210386A1 (de) | Thyristor | |
DE1295695B (de) | Steuerbares Halbleiterbauelement mit vier aufeinanderfolgenden Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps | |
DE3118293A1 (de) | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb | |
DE1919406B2 (de) | Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator | |
DE2945391A1 (de) | Thyristor mit einem abschaltbaren emitter-kurzschluss |