DE7138792U - Avalanche-diode - Google Patents

Avalanche-diode

Info

Publication number
DE7138792U
DE7138792U DE19717138792U DE7138792U DE7138792U DE 7138792 U DE7138792 U DE 7138792U DE 19717138792 U DE19717138792 U DE 19717138792U DE 7138792 U DE7138792 U DE 7138792U DE 7138792 U DE7138792 U DE 7138792U
Authority
DE
Germany
Prior art keywords
area
layer
conductivity type
avalanche diode
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19717138792U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE7138792U publication Critical patent/DE7138792U/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19717138792U 1970-10-14 1971-10-13 Avalanche-diode Expired DE7138792U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8061970A 1970-10-14 1970-10-14

Publications (1)

Publication Number Publication Date
DE7138792U true DE7138792U (de) 1972-01-13

Family

ID=22158517

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19717138792U Expired DE7138792U (de) 1970-10-14 1971-10-13 Avalanche-diode
DE19712151049 Pending DE2151049A1 (de) 1970-10-14 1971-10-13 Avalanche-Diode

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19712151049 Pending DE2151049A1 (de) 1970-10-14 1971-10-13 Avalanche-Diode

Country Status (4)

Country Link
US (1) US3723830A (esLanguage)
JP (1) JPS5221874B1 (esLanguage)
DE (2) DE7138792U (esLanguage)
NL (1) NL7114091A (esLanguage)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551704B2 (esLanguage) * 1972-10-04 1980-01-16
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403306A (en) * 1966-01-20 1968-09-24 Itt Semiconductor device having controllable noise characteristics

Also Published As

Publication number Publication date
DE2151049A1 (de) 1972-08-31
JPS5221874B1 (esLanguage) 1977-06-14
NL7114091A (esLanguage) 1972-04-18
US3723830A (en) 1973-03-27

Similar Documents

Publication Publication Date Title
DE69533010T2 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE69331312T2 (de) Leistungshalbleiteranordnung mit Schutzmittel
DE2559360A1 (de) Halbleiterbauteil mit integrierten schaltkreisen
DE2536277A1 (de) Halbleiteranordnung
DE19651247A1 (de) Eingabe/Ausgabeschutzschaltung mit einer SOI-Struktur
DE2342637A1 (de) Zenerdiode mit drei elektrischen anschlussbereichen
DE102020116653B4 (de) Siliziumcarbid-halbleiterbauelement
DE7010576U (de) Gesteuerter gleichrichter.
DE3238486C2 (de) Integrierte Halbleiterschaltung
DE3401407C2 (esLanguage)
DE19853743C2 (de) Halbleiter-Bauelement mit wenigstens einer Zenerdiode und wenigstens einer dazu parallel geschalteten Schottky-Diode sowie Verfahren zum Herstellen der Halbleiter-Bauelemente
DE3788500T2 (de) Bipolarer Halbleitertransistor.
DE1216435B (de) Schaltbares Halbleiterbauelement mit vier Zonen
DE2131167A1 (de) Feldeffekttransistor mit isoliertem Gitter und Gitterschutzdiode
DE2044027A1 (de) Halbleiteranordnung zur Unterdrückung der Stör MOSFET Bildung bei integrierten Schaltungen
DE2047342A1 (de) Halbleiterschalteinnchtung
DE2407696A1 (de) Thyristor
DE2852200C2 (esLanguage)
DE10314516A1 (de) Halbleiter-Bauelement
DE1539070A1 (de) Halbleiteranordnungen mit kleinen Oberflaechenstroemen
DE3226673A1 (de) Kapazitaetsvariationsvorrichtung
DE7138792U (de) Avalanche-diode
DE69416624T2 (de) Monolitisches Bauelement mit einer Schutzdiode, die mit einer Vielzahl von seriell geschalteten Diodenpaaren parallelgeschaltet ist, und dessen Verwendungen
EP0656659B1 (de) ESD-Schutzstruktur für integrierte Schaltungen
DE2015815A1 (de) Schutzschaltung für gitterisolierte Feldeffekttransistoren