DE69940854D1 - Verfahren zur herstellung eines silizium/aluminiumsputtertargets - Google Patents

Verfahren zur herstellung eines silizium/aluminiumsputtertargets

Info

Publication number
DE69940854D1
DE69940854D1 DE69940854T DE69940854T DE69940854D1 DE 69940854 D1 DE69940854 D1 DE 69940854D1 DE 69940854 T DE69940854 T DE 69940854T DE 69940854 T DE69940854 T DE 69940854T DE 69940854 D1 DE69940854 D1 DE 69940854D1
Authority
DE
Germany
Prior art keywords
silicon
producing
aluminum
sputter target
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940854T
Other languages
English (en)
Inventor
Joseph C Runkle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultraclad Corp
Original Assignee
Ultraclad Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultraclad Corp filed Critical Ultraclad Corp
Application granted granted Critical
Publication of DE69940854D1 publication Critical patent/DE69940854D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
DE69940854T 1998-12-28 1999-12-22 Verfahren zur herstellung eines silizium/aluminiumsputtertargets Expired - Lifetime DE69940854D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11392098P 1998-12-28 1998-12-28
PCT/US1999/030949 WO2000038862A1 (en) 1998-12-28 1999-12-22 Method of producing a silicom/aluminum sputtering target

Publications (1)

Publication Number Publication Date
DE69940854D1 true DE69940854D1 (de) 2009-06-18

Family

ID=22352307

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940854T Expired - Lifetime DE69940854D1 (de) 1998-12-28 1999-12-22 Verfahren zur herstellung eines silizium/aluminiumsputtertargets

Country Status (5)

Country Link
US (1) US6214177B1 (de)
EP (1) EP1146979B1 (de)
AT (1) ATE430636T1 (de)
DE (1) DE69940854D1 (de)
WO (1) WO2000038862A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003535969A (ja) * 1997-07-11 2003-12-02 ジョンソン マッティー エレクトロニクス インコーポレイテッド 金属間アルミニド及びシリサイドスパッタリングターゲット、及びその製造方法
US6713391B2 (en) 1997-07-11 2004-03-30 Honeywell International Inc. Physical vapor deposition targets
US20030183508A1 (en) * 1999-03-03 2003-10-02 Martin Weigert Sputtering target for depositing silicon layers in their nitride or oxide form and process for its preparation
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
DE10140589A1 (de) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets
BE1014736A5 (fr) * 2002-03-29 2004-03-02 Alloys For Technical Applic S Procede de fabrication et de recharge de cibles pour pulverisation cathodique.
JP2005529239A (ja) * 2002-06-07 2005-09-29 ヘラエウス インコーポレーテッド 処理従順な金属間化合物スパッタリングターゲットの製造方法
DE10253319B3 (de) * 2002-11-14 2004-05-27 W. C. Heraeus Gmbh & Co. Kg Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, sowie die Verwendung des Sputtertargets
JP2006316339A (ja) * 2005-04-12 2006-11-24 Kobe Steel Ltd Ａｌ系スパッタリングターゲット
US7871727B2 (en) * 2005-07-25 2011-01-18 3M Innovative Properties Company Alloy composition for lithium ion batteries
US7767349B2 (en) * 2005-07-25 2010-08-03 3M Innovative Properties Company Alloy compositions for lithium ion batteries
US7851085B2 (en) * 2005-07-25 2010-12-14 3M Innovative Properties Company Alloy compositions for lithium ion batteries
WO2007064531A1 (en) * 2005-12-01 2007-06-07 3M Innovative Properties Company Electrode compositions based on an amorphous alloy having a high silicon content
CN101619437B (zh) * 2008-07-04 2012-02-22 中国钢铁股份有限公司 硅基金属合金薄膜、具该薄膜的外壳和电子装置及制造方法
CN101724812A (zh) * 2008-10-24 2010-06-09 山东力诺新材料有限公司 一种涂层及其制造方法
CN102476923A (zh) * 2010-11-25 2012-05-30 中国航天科工集团第三研究院第八三五八研究所 一种中波红外导电膜窗口
US8871143B2 (en) * 2012-01-20 2014-10-28 Leonard Nanis Amalgam method for forming a sputter target useful in the manufacture of thin-film solar photovoltaic cells
CN111058004A (zh) * 2020-01-02 2020-04-24 宁波江丰电子材料股份有限公司 一种铬硅合金溅射靶材及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120629A (ja) 1985-11-20 1987-06-01 Sumitomo Special Metals Co Ltd 磁気ディスク及びその製造方法
AT383758B (de) 1985-12-23 1987-08-25 Plansee Metallwerk Verfahren zur herstellung eines sputter-targets
EP0295028B1 (de) 1987-06-08 1993-04-14 Esselte Meto International GmbH Magnetische Vorrichtungen
JPH04184732A (ja) 1990-11-20 1992-07-01 Seiko Epson Corp スパッタリングターゲットおよび、そのスパッタリングターゲットを用いた保護膜
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
EP0490345B1 (de) 1990-12-12 1995-04-12 Japan Energy Corporation Unmagnetisches Substrat eines Magnetkopfs, Magnetkopf- und Substratherstellungsverfahren
US5087297A (en) 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5342571A (en) 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
JPH05331635A (ja) * 1992-05-29 1993-12-14 Kobe Steel Ltd Ａｌ含有Ｓｉ基合金ターゲット材およびその製造方法
JPH06299343A (ja) * 1993-04-12 1994-10-25 Seiko Epson Corp スパッタリング用ターゲット及び製造方法
US5403458A (en) 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use

Also Published As

Publication number Publication date
WO2000038862A1 (en) 2000-07-06
EP1146979A1 (de) 2001-10-24
US6214177B1 (en) 2001-04-10
EP1146979B1 (de) 2009-05-06
EP1146979A4 (de) 2004-07-14
ATE430636T1 (de) 2009-05-15

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