DE69938764D1 - Elektronenstrahllithographisches Verfahren - Google Patents

Elektronenstrahllithographisches Verfahren

Info

Publication number
DE69938764D1
DE69938764D1 DE69938764T DE69938764T DE69938764D1 DE 69938764 D1 DE69938764 D1 DE 69938764D1 DE 69938764 T DE69938764 T DE 69938764T DE 69938764 T DE69938764 T DE 69938764T DE 69938764 D1 DE69938764 D1 DE 69938764D1
Authority
DE
Germany
Prior art keywords
electron beam
lithographic method
beam lithographic
electron
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938764T
Other languages
English (en)
Inventor
Joseph Allen Felker
James Alexander Liddle
Stuart Thomas Stanton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69938764D1 publication Critical patent/DE69938764D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
DE69938764T 1998-08-07 1999-07-26 Elektronenstrahllithographisches Verfahren Expired - Lifetime DE69938764D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9568898P 1998-08-07 1998-08-07
US09/270,487 US6177218B1 (en) 1998-08-07 1999-03-15 Lithographic process for device fabrication using electron beam imaging

Publications (1)

Publication Number Publication Date
DE69938764D1 true DE69938764D1 (de) 2008-07-03

Family

ID=26790490

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938764T Expired - Lifetime DE69938764D1 (de) 1998-08-07 1999-07-26 Elektronenstrahllithographisches Verfahren

Country Status (5)

Country Link
US (1) US6177218B1 (de)
EP (1) EP0978763B1 (de)
JP (1) JP2000091227A (de)
KR (1) KR20000017174A (de)
DE (1) DE69938764D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124112A (ja) * 1998-10-14 2000-04-28 Nikon Corp 荷電粒子線投影露光方法及び荷電粒子線投影露光装置
TW405062B (en) * 1999-02-18 2000-09-11 Asm Lithography Bv Lithographic projection apparatus
US6693689B1 (en) * 1999-03-31 2004-02-17 Lg Philips Lcd Co., Ltd. Reflective liquid crystal display device
DE10041040A1 (de) * 2000-08-22 2002-03-07 Zeiss Carl Vorrichtung und Verfahren zur Belichtung einer strahlungsempfindlichen Schicht mittels geladener Teilchen sowie Maske hierfür
US7050957B2 (en) * 2001-02-26 2006-05-23 Agere Systems Inc. Projection electron beam lithography apparatus and method employing an estimator
JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
JP4440563B2 (ja) * 2002-06-03 2010-03-24 三星モバイルディスプレイ株式會社 有機電子発光素子の薄膜蒸着用マスクフレーム組立体
GB0321169D0 (en) * 2003-09-10 2003-10-08 Hewlett Packard Development Co Methods and apparatus for generating images
US6870172B1 (en) 2004-05-21 2005-03-22 Kla-Tencor Technologies Corporation Maskless reflection electron beam projection lithography
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
US7358512B1 (en) 2006-03-28 2008-04-15 Kla-Tencor Technologies Corporation Dynamic pattern generator for controllably reflecting charged-particles
KR100699899B1 (ko) * 2006-05-08 2007-03-28 삼성전자주식회사 집적회로 장치 제조용 마스크 검사 장치 및 그 검사 방법
US7692167B1 (en) 2006-10-26 2010-04-06 Kla-Tencor Technologies Corporation High-fidelity reflection electron beam lithography
US7566882B1 (en) 2006-12-14 2009-07-28 Kla-Tencor Technologies Corporation Reflection lithography using rotating platter
US8068674B2 (en) * 2007-09-04 2011-11-29 Evolution Robotics Retail, Inc. UPC substitution fraud prevention
US7755061B2 (en) * 2007-11-07 2010-07-13 Kla-Tencor Technologies Corporation Dynamic pattern generator with cup-shaped structure
US9040942B1 (en) 2008-01-11 2015-05-26 Kla-Tencor Corporation Electron beam lithography with linear column array and rotary stage
US8253119B1 (en) 2009-07-27 2012-08-28 Kla-Tencor Corporation Well-based dynamic pattern generator
US8089051B2 (en) * 2010-02-24 2012-01-03 Kla-Tencor Corporation Electron reflector with multiple reflective modes
US8373144B1 (en) 2010-08-31 2013-02-12 Kla-Tencor Corporation Quasi-annular reflective electron patterning device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56124234A (en) 1980-03-05 1981-09-29 Hitachi Ltd Correcting method for electron beam deflection
US4708466A (en) 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
US4812661A (en) 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
US4818885A (en) 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US4924257A (en) 1988-10-05 1990-05-08 Kantilal Jain Scan and repeat high resolution projection lithography system
US5130213A (en) 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
US5079112A (en) 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
US5175075A (en) 1989-11-30 1992-12-29 Texas Instruments Incorporated Positron beam lithography
US5227269A (en) 1990-06-22 1993-07-13 Texas Instruments Incorporated Method for fabricating high density DRAM reticles
US5227839A (en) 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3105580B2 (ja) 1991-07-29 2000-11-06 富士通株式会社 荷電粒子線描画用マスク作成方法及びマスク
JPH05206017A (ja) 1991-08-09 1993-08-13 Internatl Business Mach Corp <Ibm> リソグラフイ露光システム及びその方法
US5260151A (en) 1991-12-30 1993-11-09 At&T Bell Laboratories Device manufacture involving step-and-scan delineation
US5376505A (en) 1992-03-16 1994-12-27 At&T Corp. Device fabrication entailing submicron imaging
US5316879A (en) 1992-07-14 1994-05-31 At&T Bell Laboratories Sub-micron device fabrication using multiple aperture filter
US5279925A (en) 1992-12-16 1994-01-18 At&T Bell Laboratories Projection electron lithographic procedure
US5523580A (en) 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
US5437946A (en) 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system

Also Published As

Publication number Publication date
EP0978763B1 (de) 2008-05-21
US6177218B1 (en) 2001-01-23
KR20000017174A (ko) 2000-03-25
EP0978763A1 (de) 2000-02-09
JP2000091227A (ja) 2000-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition