DE69935407D1 - CMOS-ECL Umsetzer mit hoher Geschwindigkeit und geringer Phasenverschiebung - Google Patents

CMOS-ECL Umsetzer mit hoher Geschwindigkeit und geringer Phasenverschiebung

Info

Publication number
DE69935407D1
DE69935407D1 DE69935407T DE69935407T DE69935407D1 DE 69935407 D1 DE69935407 D1 DE 69935407D1 DE 69935407 T DE69935407 T DE 69935407T DE 69935407 T DE69935407 T DE 69935407T DE 69935407 D1 DE69935407 D1 DE 69935407D1
Authority
DE
Germany
Prior art keywords
cmos
high speed
phase shift
low phase
ecl converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935407T
Other languages
English (en)
Other versions
DE69935407T2 (de
Inventor
Trenor F Goodell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE69935407D1 publication Critical patent/DE69935407D1/de
Publication of DE69935407T2 publication Critical patent/DE69935407T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H03K19/017527—Interface arrangements using a combination of bipolar and field effect transistors [BIFET] with at least one differential stage
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D27/00—Foundations as substructures
    • E02D27/28—Stressing the soil or the foundation structure while forming foundations
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D5/00—Bulkheads, piles, or other structural elements specially adapted to foundation engineering
    • E02D5/74—Means for anchoring structural elements or bulkheads
    • E02D5/80—Ground anchors
    • E02D5/808—Ground anchors anchored by using exclusively a bonding material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00376—Modifications for compensating variations of temperature, supply voltage or other physical parameters in bipolar transistor circuits
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2250/00—Production methods
    • E02D2250/0007—Production methods using a mold
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2250/00—Production methods
    • E02D2250/0023—Cast, i.e. in situ or in a mold or other formwork

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Civil Engineering (AREA)
  • Paleontology (AREA)
  • Mining & Mineral Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Logic Circuits (AREA)
DE69935407T 1999-01-29 1999-12-16 CMOS-ECL Umsetzer mit hoher Geschwindigkeit und geringer Phasenverschiebung Expired - Lifetime DE69935407T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US240064 1972-03-31
US09/240,064 US6175249B1 (en) 1999-01-29 1999-01-29 High speed low skew CMOS to ECL converter

Publications (2)

Publication Number Publication Date
DE69935407D1 true DE69935407D1 (de) 2007-04-19
DE69935407T2 DE69935407T2 (de) 2007-11-29

Family

ID=22904975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935407T Expired - Lifetime DE69935407T2 (de) 1999-01-29 1999-12-16 CMOS-ECL Umsetzer mit hoher Geschwindigkeit und geringer Phasenverschiebung

Country Status (4)

Country Link
US (1) US6175249B1 (de)
EP (1) EP1024598B1 (de)
KR (1) KR100319288B1 (de)
DE (1) DE69935407T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285088B2 (ja) * 1999-09-08 2002-05-27 日本電気株式会社 Ｅｍｉノイズ除去機構を備える波形出力装置
US8436671B2 (en) * 2010-08-19 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifters having diode-connected devices for input-output interfaces

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4645951A (en) 1983-08-31 1987-02-24 Hitachi, Ltd. Semiconductor integrated circuit having a C-MOS internal logic block and an output buffer for providing ECL level signals
US4704549A (en) 1986-10-24 1987-11-03 Ncr Corporation CMOS to ECL converter-buffer
US4806800A (en) 1987-11-20 1989-02-21 Tandem Computers Incorporated TTL-to-ECL input translator/driver circuit
US4939478A (en) 1988-02-05 1990-07-03 Siemens Aktiengesellschaft Asymmetrical differential amplifier as level converter
JPH0263318A (ja) 1988-05-27 1990-03-02 Texas Instr Inc <Ti> Ｍｏｓからｅｃｌへのレベル変換回路
EP0400372B1 (de) 1989-05-30 1995-08-02 Siemens Aktiengesellschaft CMOS-ECL-Wandler
JPH0812995B2 (ja) 1989-08-24 1996-02-07 日本電気株式会社 半導体レベル変換装置
JP2540977B2 (ja) 1990-03-28 1996-10-09 日本電気株式会社 レベル変換回路
DE4112310A1 (de) 1991-04-15 1992-10-22 Siemens Ag Signalpegelwandler
US5311082A (en) * 1991-12-17 1994-05-10 National Semiconductor Corporation CMOS to ECL level translator
US5214317A (en) 1992-05-04 1993-05-25 National Semiconductor Corporation CMOS to ECL translator with incorporated latch
JPH05315937A (ja) * 1992-05-12 1993-11-26 Fujitsu Ltd Ｃｍｏｓ／ｅｃｌレベル変換回路
US5298810A (en) 1992-09-11 1994-03-29 Cypress Semiconductor Corporation BiCMOS CMOS/ECL data multiplexer
JP2546489B2 (ja) * 1993-04-23 1996-10-23 日本電気株式会社 レベル変換回路
US5410266A (en) 1993-10-18 1995-04-25 Hewlett-Packard Company Circuit for conversion of shifted differential ECL voltage levels to CMOS voltage levels with process compensation
JPH07297703A (ja) * 1994-04-26 1995-11-10 Mitsubishi Electric Corp 出力バッファ回路
JP3195913B2 (ja) 1996-04-30 2001-08-06 株式会社東芝 半導体集積回路装置

Also Published As

Publication number Publication date
EP1024598A1 (de) 2000-08-02
DE69935407T2 (de) 2007-11-29
KR100319288B1 (ko) 2002-01-04
KR20000071305A (ko) 2000-11-25
EP1024598B1 (de) 2007-03-07
US6175249B1 (en) 2001-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition