DE69924312T2 - Auslesungskanal für aktiven Pixelsensor - Google Patents

Auslesungskanal für aktiven Pixelsensor Download PDF

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Publication number
DE69924312T2
DE69924312T2 DE69924312T DE69924312T DE69924312T2 DE 69924312 T2 DE69924312 T2 DE 69924312T2 DE 69924312 T DE69924312 T DE 69924312T DE 69924312 T DE69924312 T DE 69924312T DE 69924312 T2 DE69924312 T2 DE 69924312T2
Authority
DE
Germany
Prior art keywords
voltage
active pixel
signal
output
readout channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69924312T
Other languages
German (de)
English (en)
Other versions
DE69924312D1 (de
Inventor
Eric Y. Fremont Chou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69924312D1 publication Critical patent/DE69924312D1/de
Publication of DE69924312T2 publication Critical patent/DE69924312T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69924312T 1998-02-02 1999-01-19 Auslesungskanal für aktiven Pixelsensor Expired - Lifetime DE69924312T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18022 1998-02-02
US09/018,022 US6201572B1 (en) 1998-02-02 1998-02-02 Analog current mode assisted differential to single-ended read-out channel operable with an active pixel sensor

Publications (2)

Publication Number Publication Date
DE69924312D1 DE69924312D1 (de) 2005-04-28
DE69924312T2 true DE69924312T2 (de) 2006-03-16

Family

ID=21785824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69924312T Expired - Lifetime DE69924312T2 (de) 1998-02-02 1999-01-19 Auslesungskanal für aktiven Pixelsensor

Country Status (4)

Country Link
US (1) US6201572B1 (https=)
EP (1) EP0933928B1 (https=)
JP (1) JP4277339B2 (https=)
DE (1) DE69924312T2 (https=)

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US6529237B1 (en) * 1997-12-02 2003-03-04 Texas Instruments Incorporated Complete CDS/PGA sample and hold amplifier
US6801258B1 (en) * 1998-03-16 2004-10-05 California Institute Of Technology CMOS integration sensor with fully differential column readout circuit for light adaptive imaging
US6734907B1 (en) * 1998-04-30 2004-05-11 Minolta Co., Ltd. Solid-state image pickup device with integration and amplification
US6836291B1 (en) 1998-04-30 2004-12-28 Minolta Co., Ltd. Image pickup device with integral amplification
US6765613B1 (en) * 1998-07-22 2004-07-20 Micron Technology, Inc. Low light sensor signal to noise improvement
US6587145B1 (en) * 1998-08-20 2003-07-01 Syscan Technology (Shenzhen) Co., Ltd. Image sensors generating digital signals from light integration processes
US6563540B2 (en) 1999-02-26 2003-05-13 Intel Corporation Light sensor with increased dynamic range
JP4358351B2 (ja) * 1999-04-27 2009-11-04 浜松ホトニクス株式会社 光検出装置
US6753912B1 (en) * 1999-08-31 2004-06-22 Taiwan Advanced Sensors Corporation Self compensating correlated double sampling circuit
US6453422B1 (en) * 1999-12-23 2002-09-17 Intel Corporation Reference voltage distribution for multiload i/o systems
US6873364B1 (en) * 2000-06-08 2005-03-29 Micron Technology, Inc. Low-power signal chain for image sensors
KR100397663B1 (ko) * 2000-06-23 2003-09-13 (주) 픽셀플러스 데이터 입출력선이 리셋 모드의 전압으로 유지되는 씨모스 이미지 센서
US7286174B1 (en) 2001-06-05 2007-10-23 Dalsa, Inc. Dual storage node pixel for CMOS sensor
US6797933B1 (en) * 2001-06-29 2004-09-28 Vanguard International Semiconductor Corporation On-chip design-for-testing structure for CMOS APS (active pixel sensor) image sensor
FR2838903B1 (fr) * 2002-04-17 2005-08-05 St Microelectronics Sa Procede et dispositif de lecture de cellules photosensibles
US7443427B2 (en) * 2002-08-23 2008-10-28 Micron Technology, Inc. Wide dynamic range linear-and-log active pixel
US20050174455A1 (en) * 2004-01-27 2005-08-11 Transchip, Inc. Column amplifier for image sensors
US6873282B1 (en) * 2004-03-04 2005-03-29 Charles Douglas Murphy Differential time-to-threshold A/D conversion in digital imaging arrays
US20050200730A1 (en) * 2004-03-11 2005-09-15 Beck Jeffery S. Active pixel sensor array sampling system and method
JP4817354B2 (ja) * 2004-11-05 2011-11-16 ローム株式会社 半導体チップ
JP4425809B2 (ja) * 2005-02-03 2010-03-03 富士通マイクロエレクトロニクス株式会社 撮像装置
US7250893B2 (en) * 2005-05-17 2007-07-31 Silicon Light Machines Corporation Signal processing circuit and method for use with an optical navigation system
US8471191B2 (en) 2005-12-16 2013-06-25 Cypress Semiconductor Corporation Optical navigation system having a filter-window to seal an enclosure thereof
US7765251B2 (en) * 2005-12-16 2010-07-27 Cypress Semiconductor Corporation Signal averaging circuit and method for sample averaging
US7659776B2 (en) * 2006-10-17 2010-02-09 Cypress Semiconductor Corporation Offset voltage correction for high gain amplifier
US7742514B1 (en) 2006-10-31 2010-06-22 Cypress Semiconductor Corporation Laser navigation sensor
JP2008136047A (ja) * 2006-11-29 2008-06-12 Sony Corp 固体撮像装置及び撮像装置
US20080204567A1 (en) * 2007-02-23 2008-08-28 Weize Xu Sample and hold circuits with buffer offset removed
US8063422B2 (en) * 2008-04-25 2011-11-22 Infrared Newco, Inc. Image detection apparatus and methods
US8541727B1 (en) 2008-09-30 2013-09-24 Cypress Semiconductor Corporation Signal monitoring and control system for an optical navigation sensor
US7723659B1 (en) 2008-10-10 2010-05-25 Cypress Semiconductor Corporation System and method for screening semiconductor lasers
FR2943179B1 (fr) * 2009-03-13 2016-06-03 E2V Semiconductors Capteur d'image mos et procede de lecture avec transistor en regime de faible inversion.
EP2254330A1 (en) * 2009-05-18 2010-11-24 Thomson Licensing Method and system for operating an image data collection device
US8836835B2 (en) 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
US11272132B2 (en) 2019-06-07 2022-03-08 Pacific Biosciences Of California, Inc. Temporal differential active pixel sensor

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Publication number Priority date Publication date Assignee Title
JP3287056B2 (ja) * 1993-03-24 2002-05-27 ソニー株式会社 固体撮像装置
US5841126A (en) * 1994-01-28 1998-11-24 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5631704A (en) * 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
EP0757475B1 (en) * 1995-08-02 2004-01-21 Canon Kabushiki Kaisha Solid-state image sensing device with common output line
US5898168A (en) * 1997-06-12 1999-04-27 International Business Machines Corporation Image sensor pixel circuit
JP3673620B2 (ja) * 1997-07-18 2005-07-20 キヤノン株式会社 光電変換装置
US5900623A (en) * 1997-08-11 1999-05-04 Chrontel, Inc. Active pixel sensor using CMOS technology with reverse biased photodiodes

Also Published As

Publication number Publication date
US6201572B1 (en) 2001-03-13
JPH11275471A (ja) 1999-10-08
JP4277339B2 (ja) 2009-06-10
DE69924312D1 (de) 2005-04-28
EP0933928B1 (en) 2005-03-23
EP0933928A3 (en) 2000-11-29
EP0933928A2 (en) 1999-08-04

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES SENSOR IP (SINGAPORE) PTE. LTD.

8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US

8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY