DE69911792D1 - Herstellung einer oxidschicht mit nicht gleichmässiger dicke auf der oberfläche eines siliziumsubstrats - Google Patents
Herstellung einer oxidschicht mit nicht gleichmässiger dicke auf der oberfläche eines siliziumsubstratsInfo
- Publication number
- DE69911792D1 DE69911792D1 DE69911792T DE69911792T DE69911792D1 DE 69911792 D1 DE69911792 D1 DE 69911792D1 DE 69911792 T DE69911792 T DE 69911792T DE 69911792 T DE69911792 T DE 69911792T DE 69911792 D1 DE69911792 D1 DE 69911792D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- oxide layer
- silicon substrate
- uniform thickness
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9809607A FR2781780B1 (fr) | 1998-07-28 | 1998-07-28 | Procede de formation d'une couche d'oxyde d'epaisseur non-uniforme a la surface d'un substrat de silicium |
PCT/FR1999/001756 WO2000006489A1 (fr) | 1998-07-28 | 1999-07-19 | Procede de formation d'une couche d'oxyde d'epaisseur non-uniforme a la surface d'un substrat de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69911792D1 true DE69911792D1 (de) | 2003-11-06 |
Family
ID=9529083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69911792T Expired - Lifetime DE69911792D1 (de) | 1998-07-28 | 1999-07-19 | Herstellung einer oxidschicht mit nicht gleichmässiger dicke auf der oberfläche eines siliziumsubstrats |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1100750B1 (de) |
JP (1) | JP2002521831A (de) |
DE (1) | DE69911792D1 (de) |
FR (1) | FR2781780B1 (de) |
WO (1) | WO2000006489A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4437352B2 (ja) * | 2000-02-29 | 2010-03-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2006222151A (ja) * | 2005-02-08 | 2006-08-24 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US9318108B2 (en) | 2010-01-18 | 2016-04-19 | Apple Inc. | Intelligent automated assistant |
US10049663B2 (en) | 2016-06-08 | 2018-08-14 | Apple, Inc. | Intelligent automated assistant for media exploration |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6116530A (ja) * | 1984-07-03 | 1986-01-24 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US5021354A (en) * | 1989-12-04 | 1991-06-04 | Motorola, Inc. | Process for manufacturing a semiconductor device |
US5106768A (en) * | 1990-08-31 | 1992-04-21 | United Microelectronics Corporation | Method for the manufacture of CMOS FET by P+ maskless technique |
US5937310A (en) * | 1996-04-29 | 1999-08-10 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
-
1998
- 1998-07-28 FR FR9809607A patent/FR2781780B1/fr not_active Expired - Fee Related
-
1999
- 1999-07-19 JP JP2000562301A patent/JP2002521831A/ja active Pending
- 1999-07-19 EP EP99929500A patent/EP1100750B1/de not_active Expired - Lifetime
- 1999-07-19 DE DE69911792T patent/DE69911792D1/de not_active Expired - Lifetime
- 1999-07-19 WO PCT/FR1999/001756 patent/WO2000006489A1/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2781780B1 (fr) | 2000-10-27 |
EP1100750A1 (de) | 2001-05-23 |
FR2781780A1 (fr) | 2000-02-04 |
EP1100750B1 (de) | 2003-10-01 |
JP2002521831A (ja) | 2002-07-16 |
WO2000006489A1 (fr) | 2000-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: FRANCE TELECOM, PARIS, FR |
|
8332 | No legal effect for de |