DE69910920D1 - Steuerschaltung für ein Halbleiterbauteil - Google Patents

Steuerschaltung für ein Halbleiterbauteil

Info

Publication number
DE69910920D1
DE69910920D1 DE69910920T DE69910920T DE69910920D1 DE 69910920 D1 DE69910920 D1 DE 69910920D1 DE 69910920 T DE69910920 T DE 69910920T DE 69910920 T DE69910920 T DE 69910920T DE 69910920 D1 DE69910920 D1 DE 69910920D1
Authority
DE
Germany
Prior art keywords
control circuit
semiconductor component
semiconductor device
gate
gate driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69910920T
Other languages
English (en)
Other versions
DE69910920T2 (de
Inventor
Erkki Miettinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Oy
Original Assignee
ABB Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FI981740A external-priority patent/FI105508B/fi
Application filed by ABB Oy filed Critical ABB Oy
Publication of DE69910920D1 publication Critical patent/DE69910920D1/de
Application granted granted Critical
Publication of DE69910920T2 publication Critical patent/DE69910920T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dairy Products (AREA)
  • Networks Using Active Elements (AREA)
  • Dicing (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Medicines Containing Plant Substances (AREA)
  • Logic Circuits (AREA)
DE69910920T 1998-08-12 1999-07-23 Steuerschaltung für ein Halbleiterbauteil Expired - Lifetime DE69910920T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FI981740A FI105508B (fi) 1998-08-12 1998-08-12 Ohjainpiiri
FI982046 1998-09-23
FI982046A FI105509B (fi) 1998-08-12 1998-09-23 Ohjainpiiri
FI981740 1998-09-23

Publications (2)

Publication Number Publication Date
DE69910920D1 true DE69910920D1 (de) 2003-10-09
DE69910920T2 DE69910920T2 (de) 2004-07-22

Family

ID=26160628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69910920T Expired - Lifetime DE69910920T2 (de) 1998-08-12 1999-07-23 Steuerschaltung für ein Halbleiterbauteil

Country Status (6)

Country Link
US (1) US6184740B1 (de)
EP (1) EP0980141B1 (de)
JP (1) JP3602011B2 (de)
AT (1) ATE249110T1 (de)
DE (1) DE69910920T2 (de)
FI (1) FI105509B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5193657B2 (ja) * 2008-04-03 2013-05-08 日立オートモティブシステムズ株式会社 インバータ装置
ES2745999T3 (es) 2013-04-04 2020-03-04 Tm4 Inc Célula de conmutación y circuito de compensación para la misma
US9774244B2 (en) * 2013-11-01 2017-09-26 Tm4 Inc. Power converter configured for limiting switching overvoltage
US9768693B2 (en) * 2013-11-14 2017-09-19 Tm4 Inc. Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch
WO2015070347A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
JP6819256B2 (ja) * 2016-12-07 2021-01-27 富士電機株式会社 駆動回路及び該回路を含んでなる半導体モジュール
FR3115172B1 (fr) * 2020-10-09 2024-01-19 Valeo Siemens Eautomotive Norway As Circuit électronique de commande d’un transistor à effet de champ
WO2023157185A1 (ja) * 2022-02-17 2023-08-24 三菱電機株式会社 ゲート駆動回路及び電力変換装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268451A (ja) * 1988-04-15 1989-10-26 Mitsubishi Electric Corp 半導体素子の過電圧抑制回路
EP0614278B1 (de) 1988-11-16 1998-01-28 Fuji Electric Co., Ltd. Treiberschaltung für eine spannungsgesteuerte Halbleitervorrichtung
FR2671241B1 (fr) 1990-12-27 1997-04-30 Peugeot Circuit de commande d'un transistor de puissance utilise en commutation forcee.
JP3126565B2 (ja) * 1993-11-01 2001-01-22 株式会社東芝 Ac/dc変換器
FR2713029B1 (fr) * 1993-11-22 1995-12-29 Gec Alsthom Transport Sa Dispositif d'alimentation de circuit de commande de composant interrupteur de puissance.
JPH0829725A (ja) 1994-05-10 1996-02-02 Canon Inc 複眼式画像表示装置
SE9500761D0 (sv) 1995-03-02 1995-03-02 Abb Research Ltd Skyddskrets för seriekopplade krafthalvledare
JP3125622B2 (ja) 1995-05-16 2001-01-22 富士電機株式会社 半導体装置
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
EP0814564A1 (de) 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Elektronischer Schaltkreis mit reduzierten Schalttransienten
WO1998001940A1 (fr) 1996-07-05 1998-01-15 Hitachi, Ltd. Convertisseur de puissance
SE515457C2 (sv) * 1996-09-20 2001-08-06 Abb Research Ltd Metod och anordning vid effektransistor
JP3067687B2 (ja) * 1997-05-08 2000-07-17 富士電機株式会社 Igbt駆動回路

Also Published As

Publication number Publication date
EP0980141A1 (de) 2000-02-16
ATE249110T1 (de) 2003-09-15
US6184740B1 (en) 2001-02-06
JP3602011B2 (ja) 2004-12-15
FI105509B (fi) 2000-08-31
DE69910920T2 (de) 2004-07-22
FI982046A0 (fi) 1998-09-23
FI982046A (fi) 2000-02-13
EP0980141B1 (de) 2003-09-03
JP2000089838A (ja) 2000-03-31

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Legal Events

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