DE69834451D1 - Anordnung zum Schützen einer integrierten MOS-Vorrichtung gegen Spannungsabfälle - Google Patents

Anordnung zum Schützen einer integrierten MOS-Vorrichtung gegen Spannungsabfälle

Info

Publication number
DE69834451D1
DE69834451D1 DE69834451T DE69834451T DE69834451D1 DE 69834451 D1 DE69834451 D1 DE 69834451D1 DE 69834451 T DE69834451 T DE 69834451T DE 69834451 T DE69834451 T DE 69834451T DE 69834451 D1 DE69834451 D1 DE 69834451D1
Authority
DE
Germany
Prior art keywords
protecting
arrangement
voltage drops
mos device
device against
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69834451T
Other languages
English (en)
Other versions
DE69834451T2 (de
Inventor
Jean Barret
Antoine Pavlin
Pietro Fichera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69834451D1 publication Critical patent/DE69834451D1/de
Publication of DE69834451T2 publication Critical patent/DE69834451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69834451T 1997-05-28 1998-05-22 Schutzvorrichtung für einen integrierten MOS-Transistor gengen Spannungsgradienten Expired - Fee Related DE69834451T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9706824 1997-05-28
FR9706824A FR2764137B1 (fr) 1997-05-28 1997-05-28 Composant de protection d'un transistor mos integre contre des gradients de tension

Publications (2)

Publication Number Publication Date
DE69834451D1 true DE69834451D1 (de) 2006-06-14
DE69834451T2 DE69834451T2 (de) 2007-05-03

Family

ID=9507539

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69834451T Expired - Fee Related DE69834451T2 (de) 1997-05-28 1998-05-22 Schutzvorrichtung für einen integrierten MOS-Transistor gengen Spannungsgradienten

Country Status (5)

Country Link
US (1) US6057577A (de)
EP (1) EP0881681B1 (de)
JP (1) JP2980106B2 (de)
DE (1) DE69834451T2 (de)
FR (1) FR2764137B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1508918A1 (de) * 2003-08-22 2005-02-23 Freescale Semiconductor, Inc. Leistungshalbleiterbauelement
US7521773B2 (en) * 2006-03-31 2009-04-21 Fairchild Semiconductor Corporation Power device with improved edge termination
JP5040387B2 (ja) * 2007-03-20 2012-10-03 株式会社デンソー 半導体装置
CN101868856B (zh) 2007-09-21 2014-03-12 飞兆半导体公司 用于功率器件的超结结构及制造方法
CN102299150B (zh) * 2010-06-22 2013-06-12 茂达电子股份有限公司 具有可调输出电容值的功率半导体组件以及制作方法
JP5714280B2 (ja) * 2010-09-17 2015-05-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183064A (en) * 1981-05-07 1982-11-11 Toshiba Corp Semiconductor device
FR2636481B1 (fr) * 1988-09-14 1990-11-30 Sgs Thomson Microelectronics Diode active integrable
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit

Also Published As

Publication number Publication date
JP2980106B2 (ja) 1999-11-22
EP0881681A1 (de) 1998-12-02
DE69834451T2 (de) 2007-05-03
FR2764137B1 (fr) 1999-08-13
FR2764137A1 (fr) 1998-12-04
US6057577A (en) 2000-05-02
EP0881681B1 (de) 2006-05-10
JPH10335665A (ja) 1998-12-18

Similar Documents

Publication Publication Date Title
DE59904078D1 (de) Überrroll-Schutzvorrichtung
DE69624983D1 (de) Spitzen-Schutzvorrichtung
DE69731181D1 (de) Schutzvorrichtung gegen Überspannungen zum Schützen eines einen MOS-Steueranschluss aufweisenden Leistungstransistors
DE59700218D1 (de) Anordnung zum Schutz elektrischer und elektronischer Bauelmente vor elektrostatischen Entladungen
DE59911999D1 (de) Aufprall-Schutzvorrichtung
DE69812876D1 (de) Brennstoffzufuhrvorrichtung
DE69937935D1 (de) Einrichtung zum bestücken von bauteilen
DE69932635D1 (de) Hocheffiziente spannungsversorgung fuer eine zweidrahtschleifengespeisste vorrichtung
FI973847A (fi) Sovitelma suojalaitteen yhteydessä
DE59814102D1 (de) Integrierte Halbleiterschaltung mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE69826399D1 (de) Schleifvorrichtung für Bohrerspitzen
DE19782246T1 (de) IC-Testgerät
DE69805705D1 (de) Gegen Beschädigung geschützter Bohrer
DE59804831D1 (de) Esd-schutzvorrichtung für integrierte schaltungen
DE69527453D1 (de) Schutzeinrichtung gegen Überspannungen in integrierten Schaltungen
DE69936677D1 (de) Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
NO984293D0 (no) Dampgenerator med en integrert st°vseparator
DE69623509D1 (de) Integriertes Halbleiterbauelement mit Schutzvorrichtung gegen elektrostatische Entladungen
DE69834451D1 (de) Anordnung zum Schützen einer integrierten MOS-Vorrichtung gegen Spannungsabfälle
DE59904805D1 (de) Aufprall-Schutzvorrichtung
DE69914314D1 (de) Vorrichtung zum regulieren der spannung
DE69524858D1 (de) Bauelement zum Schutz einer integrierten Schaltung gegen elektrostatische Entladungen
DE19881377D2 (de) Einrichtung zum Positionieren eines Gegenstandes
DE69722561D1 (de) Bauteilzufuhreinrichtung
FI980927A0 (fi) Suojalaite

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee