DE69815962D1 - Strahlungsunempfindliche statische Speicherzelle - Google Patents
Strahlungsunempfindliche statische SpeicherzelleInfo
- Publication number
- DE69815962D1 DE69815962D1 DE69815962T DE69815962T DE69815962D1 DE 69815962 D1 DE69815962 D1 DE 69815962D1 DE 69815962 T DE69815962 T DE 69815962T DE 69815962 T DE69815962 T DE 69815962T DE 69815962 D1 DE69815962 D1 DE 69815962D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- static cell
- cell insensitive
- insensitive
- static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9710454 | 1997-08-12 | ||
| FR9710454A FR2767413B1 (fr) | 1997-08-12 | 1997-08-12 | Cellule memoire statique insensible aux rayonnements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69815962D1 true DE69815962D1 (de) | 2003-08-07 |
| DE69815962T2 DE69815962T2 (de) | 2004-06-03 |
Family
ID=9510360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69815962T Expired - Fee Related DE69815962T2 (de) | 1997-08-12 | 1998-08-10 | Strahlungsunempfindliche statische Speicherzelle |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5940318A (de) |
| EP (1) | EP0897182B1 (de) |
| DE (1) | DE69815962T2 (de) |
| FR (1) | FR2767413B1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573773B2 (en) | 2000-02-04 | 2003-06-03 | University Of New Mexico | Conflict free radiation tolerant storage cell |
| US6327176B1 (en) * | 2000-08-11 | 2001-12-04 | Systems Integration Inc. | Single event upset (SEU) hardened latch circuit |
| US7394052B2 (en) * | 2001-07-30 | 2008-07-01 | Nippon Telegraph And Telephone Corporation | Parallel processing logic circuit for sensor signal processing |
| US6744661B1 (en) | 2002-05-15 | 2004-06-01 | Virage Logic Corp. | Radiation-hardened static memory cell using isolation technology |
| US8363455B2 (en) * | 2008-12-04 | 2013-01-29 | David Rennie | Eight transistor soft error robust storage cell |
| US8081010B1 (en) | 2009-11-24 | 2011-12-20 | Ics, Llc | Self restoring logic |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4852060A (en) * | 1988-03-31 | 1989-07-25 | International Business Machines Corporation | Soft error resistant data storage cells |
| US5043939A (en) * | 1989-06-15 | 1991-08-27 | Bipolar Integrated Technology, Inc. | Soft error immune memory |
| US5111429A (en) * | 1990-11-06 | 1992-05-05 | Idaho Research Foundation, Inc. | Single event upset hardening CMOS memory circuit |
| FR2702873B1 (fr) * | 1993-03-18 | 1995-06-09 | Centre Nat Rech Scient | Cellule memoire insensible aux collisions d'ions lourds. |
| FR2702874B1 (fr) * | 1993-03-18 | 1995-06-09 | Centre Nat Rech Scient | Cellule memoire insensible aux rayonnements. |
-
1997
- 1997-08-12 FR FR9710454A patent/FR2767413B1/fr not_active Expired - Fee Related
-
1998
- 1998-08-10 DE DE69815962T patent/DE69815962T2/de not_active Expired - Fee Related
- 1998-08-10 EP EP98410090A patent/EP0897182B1/de not_active Expired - Lifetime
- 1998-08-11 US US09/132,590 patent/US5940318A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0897182B1 (de) | 2003-07-02 |
| US5940318A (en) | 1999-08-17 |
| EP0897182A1 (de) | 1999-02-17 |
| DE69815962T2 (de) | 2004-06-03 |
| FR2767413A1 (fr) | 1999-02-19 |
| FR2767413B1 (fr) | 1999-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |