DE69811430D1 - Resistentwicklungsverfahren - Google Patents

Resistentwicklungsverfahren

Info

Publication number
DE69811430D1
DE69811430D1 DE69811430T DE69811430T DE69811430D1 DE 69811430 D1 DE69811430 D1 DE 69811430D1 DE 69811430 T DE69811430 T DE 69811430T DE 69811430 T DE69811430 T DE 69811430T DE 69811430 D1 DE69811430 D1 DE 69811430D1
Authority
DE
Germany
Prior art keywords
development process
resist development
resist
development
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69811430T
Other languages
English (en)
Other versions
DE69811430T2 (de
Inventor
Zhijian Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE69811430D1 publication Critical patent/DE69811430D1/de
Application granted granted Critical
Publication of DE69811430T2 publication Critical patent/DE69811430T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69811430T 1997-06-26 1998-06-02 Resistentwicklungsverfahren Expired - Lifetime DE69811430T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88311697A 1997-06-26 1997-06-26

Publications (2)

Publication Number Publication Date
DE69811430D1 true DE69811430D1 (de) 2003-03-27
DE69811430T2 DE69811430T2 (de) 2003-11-20

Family

ID=25382022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811430T Expired - Lifetime DE69811430T2 (de) 1997-06-26 1998-06-02 Resistentwicklungsverfahren

Country Status (5)

Country Link
EP (1) EP0887710B1 (de)
JP (1) JPH11109648A (de)
KR (1) KR19990006917A (de)
CN (1) CN1213788A (de)
DE (1) DE69811430T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265323B1 (en) 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
TW473817B (en) * 2000-01-11 2002-01-21 Ibm Method for eliminating development related defects in photoresist masks
KR100442146B1 (ko) * 2002-06-17 2004-07-27 동부전자 주식회사 반도체 소자 제조용 현상장치
CN115903396B (zh) * 2022-11-15 2023-08-04 江苏华兴激光科技有限公司 一种微纳结构及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669019B2 (ja) * 1984-03-12 1994-08-31 株式会社ニコン 半導体製造装置
US4902608A (en) * 1987-12-17 1990-02-20 Texas Instruments Incorporated Immersion development and rinse machine and process
JPH03181118A (ja) * 1989-12-11 1991-08-07 Toshiba Corp 半導体ウエハの現像装置
JPH0456121A (ja) * 1990-06-21 1992-02-24 Nippondenso Co Ltd レジスト現像装置
US5416047A (en) * 1990-09-07 1995-05-16 Tokyo Electron Limited Method for applying process solution to substrates
JPH05136046A (ja) * 1991-11-12 1993-06-01 Oki Electric Ind Co Ltd デイツプ現像装置
JPH07135136A (ja) * 1993-06-21 1995-05-23 Fujitsu Ltd 半導体装置の製造方法
JP3602164B2 (ja) * 1994-08-12 2004-12-15 東京エレクトロン株式会社 現像方法
JP2874155B2 (ja) * 1994-11-02 1999-03-24 株式会社フロンテック レジスト現像装置
JP3347248B2 (ja) * 1995-11-30 2002-11-20 大日本スクリーン製造株式会社 現像装置
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
JP2864366B2 (ja) * 1996-04-19 1999-03-03 東京エレクトロン株式会社 被処理体の現像方法

Also Published As

Publication number Publication date
JPH11109648A (ja) 1999-04-23
EP0887710B1 (de) 2003-02-19
EP0887710A3 (de) 1999-09-08
EP0887710A2 (de) 1998-12-30
CN1213788A (zh) 1999-04-14
KR19990006917A (ko) 1999-01-25
DE69811430T2 (de) 2003-11-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE