DE69734456D1 - Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode - Google Patents

Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode

Info

Publication number
DE69734456D1
DE69734456D1 DE69734456T DE69734456T DE69734456D1 DE 69734456 D1 DE69734456 D1 DE 69734456D1 DE 69734456 T DE69734456 T DE 69734456T DE 69734456 T DE69734456 T DE 69734456T DE 69734456 D1 DE69734456 D1 DE 69734456D1
Authority
DE
Germany
Prior art keywords
polysilicide
stabilized
resistant
manufacturing
stabilized polysilicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69734456T
Other languages
English (en)
Other versions
DE69734456T2 (de
Inventor
Ulf Smith
Matts Rydberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE69734456D1 publication Critical patent/DE69734456D1/de
Application granted granted Critical
Publication of DE69734456T2 publication Critical patent/DE69734456T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69734456T 1996-06-17 1997-06-17 Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode Expired - Fee Related DE69734456T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9602395 1996-06-17
SE9602395A SE511816C3 (sv) 1996-06-17 1996-06-17 Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan
PCT/SE1997/001071 WO1997049103A1 (en) 1996-06-17 1997-06-17 A stabilized polysilicon resistor and a method of manufacturing it

Publications (2)

Publication Number Publication Date
DE69734456D1 true DE69734456D1 (de) 2005-12-01
DE69734456T2 DE69734456T2 (de) 2006-07-06

Family

ID=20403046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734456T Expired - Fee Related DE69734456T2 (de) 1996-06-17 1997-06-17 Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode

Country Status (11)

Country Link
US (2) US6140910A (de)
EP (1) EP0932907B1 (de)
JP (1) JP2000512807A (de)
KR (1) KR100363667B1 (de)
CN (1) CN1134792C (de)
AU (1) AU3281697A (de)
CA (1) CA2258506A1 (de)
DE (1) DE69734456T2 (de)
SE (1) SE511816C3 (de)
TW (1) TW491411U (de)
WO (1) WO1997049103A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE513116C2 (sv) 1998-11-13 2000-07-10 Ericsson Telefon Ab L M Polykiselresistor och sätt att framställa sådan
JP2001060668A (ja) * 1999-07-01 2001-03-06 Intersil Corp 抵抗温度係数の小さい抵抗器（ＴＣＲＬ）による改善されたＢｉＣＭＯＳプロセス
US6532568B1 (en) * 2000-10-30 2003-03-11 Delphi Technologies, Inc. Apparatus and method for conditioning polysilicon circuit elements
KR100767540B1 (ko) * 2001-04-13 2007-10-17 후지 덴키 홀딩스 가부시끼가이샤 반도체 장치
US6732422B1 (en) * 2002-01-04 2004-05-11 Taiwan Semiconductor Manufacturing Company Method of forming resistors
CN100372028C (zh) * 2003-10-24 2008-02-27 上海宏力半导体制造有限公司 半导体电阻元件及其制造方法
JP2005217454A (ja) * 2004-01-27 2005-08-11 Sanyo Electric Co Ltd 固体撮像装置
US7285472B2 (en) * 2005-01-27 2007-10-23 International Business Machines Corporation Low tolerance polysilicon resistor for low temperature silicide processing
US20070096260A1 (en) * 2005-10-28 2007-05-03 International Business Machines Corporation Reduced parasitic and high value resistor and method of manufacture
CN102110593B (zh) * 2010-12-15 2012-05-09 无锡中微晶园电子有限公司 一种提高多晶硅薄膜电阻稳定性的方法
US9496325B2 (en) * 2012-06-26 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate resistor and method of making same
US9012313B2 (en) * 2013-03-15 2015-04-21 Globalfoundries Inc. Semiconductor device including a resistor and method for the formation thereof
US9634081B2 (en) * 2013-10-08 2017-04-25 Infineon Technologies Ag Methods for producing polysilicon resistors
DE102015206175A1 (de) * 2015-04-07 2016-10-13 Globalfoundries Inc. Halbleiterbauelement mit Dünnschicht-Widerstand
JP6939497B2 (ja) * 2017-12-13 2021-09-22 富士電機株式会社 抵抗素子
JP7267786B2 (ja) * 2019-03-13 2023-05-02 エイブリック株式会社 半導体装置の製造方法
JP7275884B2 (ja) 2019-06-13 2023-05-18 富士電機株式会社 抵抗素子及びその製造方法
US11676961B2 (en) * 2020-11-01 2023-06-13 Texas Instruments Incorporated Semiconductor device with low noise transistor and low temperature coefficient resistor
CN112707366A (zh) * 2020-12-29 2021-04-27 无锡中微晶园电子有限公司 一种高精度多晶低阻的工艺制造技术

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740478A (en) * 1987-01-30 1988-04-26 Motorola Inc. Integrated circuit method using double implant doping
SE466078B (sv) * 1990-04-20 1991-12-09 Ericsson Telefon Ab L M Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen
JPH0555470A (ja) * 1991-08-26 1993-03-05 Ricoh Co Ltd 集積回路の製造方法
US5212108A (en) * 1991-12-13 1993-05-18 Honeywell Inc. Fabrication of stabilized polysilicon resistors for SEU control
SE504969C2 (sv) * 1995-09-14 1997-06-02 Ericsson Telefon Ab L M Polykiselresistor och förfarande för framställning av en sådan
TW319911B (en) * 1996-11-25 1997-11-11 Mos Electronics Taiwan Inc Manufacturing method of resistor by using contact hole with high aspect ratio

Also Published As

Publication number Publication date
CA2258506A1 (en) 1997-12-24
EP0932907A1 (de) 1999-08-04
US6140910A (en) 2000-10-31
SE511816C2 (sv) 1999-11-29
DE69734456T2 (de) 2006-07-06
EP0932907B1 (de) 2005-10-26
SE511816C3 (sv) 2000-01-24
CN1227659A (zh) 1999-09-01
WO1997049103A1 (en) 1997-12-24
SE9602395D0 (sv) 1996-06-17
TW491411U (en) 2002-06-11
JP2000512807A (ja) 2000-09-26
KR20000016756A (ko) 2000-03-25
CN1134792C (zh) 2004-01-14
KR100363667B1 (ko) 2003-05-12
US6313728B1 (en) 2001-11-06
AU3281697A (en) 1998-01-07
SE9602395L (sv) 1997-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee