DE69734341D1 - Leiterplatte für Leistungsmodul - Google Patents

Leiterplatte für Leistungsmodul

Info

Publication number
DE69734341D1
DE69734341D1 DE69734341T DE69734341T DE69734341D1 DE 69734341 D1 DE69734341 D1 DE 69734341D1 DE 69734341 T DE69734341 T DE 69734341T DE 69734341 T DE69734341 T DE 69734341T DE 69734341 D1 DE69734341 D1 DE 69734341D1
Authority
DE
Germany
Prior art keywords
pcb
power module
module
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734341T
Other languages
English (en)
Other versions
DE69734341T2 (de
Inventor
Masami Sakuraba
Masami Kimura
Junji Nakamura
Masaya Takahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Mining Co Ltd filed Critical Dowa Mining Co Ltd
Publication of DE69734341D1 publication Critical patent/DE69734341D1/de
Application granted granted Critical
Publication of DE69734341T2 publication Critical patent/DE69734341T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/91—Product with molecular orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
DE69734341T 1996-08-27 1997-08-27 Leiterplatte für Leistungsmodul Expired - Lifetime DE69734341T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8244075A JPH1067586A (ja) 1996-08-27 1996-08-27 パワーモジュール用回路基板およびその製造方法
JP24407596 1996-08-27

Publications (2)

Publication Number Publication Date
DE69734341D1 true DE69734341D1 (de) 2006-02-23
DE69734341T2 DE69734341T2 (de) 2006-07-06

Family

ID=17113370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734341T Expired - Lifetime DE69734341T2 (de) 1996-08-27 1997-08-27 Leiterplatte für Leistungsmodul

Country Status (4)

Country Link
US (1) US6013357A (de)
EP (1) EP0833383B1 (de)
JP (1) JPH1067586A (de)
DE (1) DE69734341T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5038565B2 (ja) 2000-09-22 2012-10-03 株式会社東芝 セラミックス回路基板およびその製造方法
US6726996B2 (en) 2001-05-16 2004-04-27 International Business Machines Corporation Laminated diffusion barrier
WO2005098942A1 (ja) * 2004-04-05 2005-10-20 Mitsubishi Materials Corporation Ａi／ａiｎ接合体、パワーモジュール用基板及びパワーモジュール並びにａi／ａiｎ接合体の製造方法
JP5440947B2 (ja) * 2010-03-31 2014-03-12 日立金属株式会社 窒化珪素基板の製造方法及び窒化珪素基板並びにそれを使用した回路基板
JP6396817B2 (ja) * 2014-01-30 2018-09-26 京セラ株式会社 窒化珪素質基板およびこれを備える回路基板ならびに電子装置
JP6240034B2 (ja) * 2014-06-27 2017-11-29 京セラ株式会社 窒化珪素質基板およびこれを備える回路基板ならびに電子装置
CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法
CN112811912B (zh) * 2021-01-20 2021-11-02 中国科学院上海硅酸盐研究所 一种高性能氮化硅陶瓷基片的批量化烧结方法
WO2024203965A1 (ja) * 2023-03-24 2024-10-03 株式会社 東芝 セラミックス基板、セラミックス回路基板、半導体装置、スラリーの製造方法、及び、離型剤塗布方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1415522A (en) * 1972-04-06 1975-11-26 Lucas Industries Ltd Method of manufacturing hot pressed cermaic material based on silicon nitride
DE3376829D1 (en) * 1982-06-29 1988-07-07 Toshiba Kk Method for directly bonding ceramic and metal members and laminated body of the same
EP0235682B2 (de) * 1986-02-20 1997-11-12 Kabushiki Kaisha Toshiba Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht
EP0282285B1 (de) * 1987-03-13 1990-11-14 Kabushiki Kaisha Toshiba Verfahren zur Metallisierung eines nitrid-keramischen Gegenstandes
US4883704A (en) * 1987-03-30 1989-11-28 Kabushiki Kaisha Toshiba Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it
US4920640A (en) * 1988-01-27 1990-05-01 W. R. Grace & Co.-Conn. Hot pressing dense ceramic sheets for electronic substrates and for multilayer electronic substrates
JPH01203270A (ja) * 1988-02-08 1989-08-16 Sumitomo Electric Ind Ltd 高熱伝導性窒化アルミニウム焼結体及びその製造法
JP2755594B2 (ja) * 1988-03-30 1998-05-20 株式会社 東芝 セラミックス回路基板
JP2628510B2 (ja) * 1988-04-08 1997-07-09 新日本製鐵株式会社 ＢＮ−ＡｌＮ系複合焼結体の製造方法
JPH02149485A (ja) * 1988-11-29 1990-06-08 Toshiba Corp セラミック基板の製造方法
JP2774560B2 (ja) * 1989-03-31 1998-07-09 株式会社東芝 窒化アルミニウムメタライズ基板
JPH0393687A (ja) * 1989-09-06 1991-04-18 Toshiba Corp 窒化アルミニウム基板の製造方法
JPH0413507A (ja) * 1990-04-27 1992-01-17 Sumitomo Electric Ind Ltd ダイヤモンド被覆Ｓｉ↓３Ｎ↓４焼結体製ドリル
JPH04119975A (ja) * 1990-09-07 1992-04-21 Murata Mfg Co Ltd セラミック基板と金属板との接合用治具
JP2555231B2 (ja) * 1991-05-21 1996-11-20 富士通株式会社 窒化アルミニウム多層回路基板の製造方法
JPH05218229A (ja) * 1992-01-28 1993-08-27 Toshiba Corp セラミック回路基板
JP2736949B2 (ja) * 1992-07-28 1998-04-08 同和鉱業株式会社 高強度窒化アルミニウム回路基板およびその製造方法
EP0587119B1 (de) * 1992-09-08 1998-01-07 Kabushiki Kaisha Toshiba Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
EP0833383B1 (de) 2005-10-12
US6013357A (en) 2000-01-11
EP0833383A2 (de) 1998-04-01
EP0833383A3 (de) 1998-07-29
DE69734341T2 (de) 2006-07-06
JPH1067586A (ja) 1998-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition