DE69732637D1 - Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher - Google Patents

Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher

Info

Publication number
DE69732637D1
DE69732637D1 DE69732637T DE69732637T DE69732637D1 DE 69732637 D1 DE69732637 D1 DE 69732637D1 DE 69732637 T DE69732637 T DE 69732637T DE 69732637 T DE69732637 T DE 69732637T DE 69732637 D1 DE69732637 D1 DE 69732637D1
Authority
DE
Germany
Prior art keywords
column
parity
self
test
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69732637T
Other languages
English (en)
Other versions
DE69732637T2 (de
Inventor
Paolo Cappelletti
Alfonso Maurelli
Marco Olivo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69732637D1 publication Critical patent/DE69732637D1/de
Publication of DE69732637T2 publication Critical patent/DE69732637T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE69732637T 1997-12-22 1997-12-22 Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher Expired - Fee Related DE69732637T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830693A EP0926687B1 (de) 1997-12-22 1997-12-22 Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher

Publications (2)

Publication Number Publication Date
DE69732637D1 true DE69732637D1 (de) 2005-04-07
DE69732637T2 DE69732637T2 (de) 2005-12-29

Family

ID=8230908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69732637T Expired - Fee Related DE69732637T2 (de) 1997-12-22 1997-12-22 Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher

Country Status (4)

Country Link
US (1) US6275960B1 (de)
EP (1) EP0926687B1 (de)
JP (1) JPH11260097A (de)
DE (1) DE69732637T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0991081B1 (de) * 1998-09-30 2005-11-30 STMicroelectronics S.r.l. Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren
EP1096379B1 (de) * 1999-11-01 2005-12-07 Koninklijke Philips Electronics N.V. Datenschaltung mit einem nichtflüchtigen Speicher und mit einer fehlerkorrigierenden Schaltung
DE60024564T2 (de) 1999-11-01 2006-08-10 Koninklijke Philips Electronics N.V. Datenschaltung mit einem nicht flüchtigen Speicher und mit einer fehlerkorrigierenden Schaltung
US6813752B1 (en) * 2002-11-26 2004-11-02 Advanced Micro Devices, Inc. Method of determining charge loss activation energy of a memory array
US7321951B2 (en) * 2003-11-17 2008-01-22 Micron Technology, Inc. Method for testing flash memory power loss recovery
KR100643288B1 (ko) * 2004-11-16 2006-11-10 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
KR100643287B1 (ko) 2004-11-19 2006-11-10 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
DE102006013763A1 (de) * 2006-03-24 2007-09-27 Robert Bosch Gmbh Verfahren zum Betreiben einer Speichereinrichtung
JP4939870B2 (ja) * 2006-08-16 2012-05-30 株式会社東芝 半導体記憶装置およびそのテスト方法
JP2009070509A (ja) * 2007-09-14 2009-04-02 Oki Electric Ind Co Ltd 半導体記憶装置
EP2149841A3 (de) 2008-07-24 2013-12-04 Atmel Automotive GmbH Speichersystem, Leseverstärker, Verwendung und Verfahren zur Fehlerdetektion mittels Parity-Bits eines Blockcodes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61264599A (ja) * 1985-05-16 1986-11-22 Fujitsu Ltd 半導体記憶装置
US4939694A (en) * 1986-11-03 1990-07-03 Hewlett-Packard Company Defect tolerant self-testing self-repairing memory system
JPH0664918B2 (ja) * 1989-05-25 1994-08-22 ローム株式会社 自己訂正機能を有する半導体記憶装置
JPH05225798A (ja) * 1991-08-14 1993-09-03 Internatl Business Mach Corp <Ibm> メモリシステム
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
KR0168896B1 (ko) * 1993-09-20 1999-02-01 세키자와 다다시 패리티에 의해 에러를 수정할 수 있는 반도체 메모리장치
US5475693A (en) * 1994-12-27 1995-12-12 Intel Corporation Error management processes for flash EEPROM memory arrays

Also Published As

Publication number Publication date
EP0926687A1 (de) 1999-06-30
DE69732637T2 (de) 2005-12-29
JPH11260097A (ja) 1999-09-24
EP0926687B1 (de) 2005-03-02
US6275960B1 (en) 2001-08-14

Similar Documents

Publication Publication Date Title
US10891187B2 (en) Memory devices having differently configured blocks of memory cells
US5942004A (en) Device and a method for storing data and corresponding error-correction information
KR101541736B1 (ko) 멀티-레벨 셀 플래시 메모리 장치에서의 ｌｓｂ 페이지 복구 방법
CN101779194B (zh) 用于存储器的错误校正
US7502254B2 (en) Method for generating soft bits in flash memories
US6151246A (en) Multi-bit-per-cell flash EEPROM memory with refresh
KR101439641B1 (ko) 비휘발성 메모리 내의 기입 실패로부터의 데이터 보호
KR100953047B1 (ko) 불휘발성 메모리 소자의 동작 방법
US7864578B2 (en) Semiconductor memory repairing a defective bit and semiconductor memory system
US20130031429A1 (en) Data Recovery for Defective Word Lines During Programming of Non-Volatile Memory Arrays
US8238157B1 (en) Selective re-programming of analog memory cells
DE69732637D1 (de) Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher
US20120144273A1 (en) Non-volatile semiconductor memory device
US20140164878A1 (en) Data Recovery on Cluster Failures and ECC Enhancements with Code Word Interleaving
DE3279483D1 (en) Error-correcting memory with low storage overhead and fast correction mechanism
KR950009736A (ko) 패리티에 의해 에러를 수정할수 있는 반도체 기억장치
ATE489675T1 (de) Verfahren zur fehlerkorrektur in mbc-flash- speicher
MY130268A (en) Three-dimensional memory array and method for storing data bits and ecc bits therein
US9811284B2 (en) One-pass programming in a multi-level nonvolatile memory device with improved write amplification
US7471562B2 (en) Method and apparatus for accessing nonvolatile memory with read error by changing read reference
CN102034552A (zh) 存储装置与其资料处理方法
US7158416B2 (en) Method for operating a flash memory device
US20040088502A1 (en) Method and apparatus for virtually partitioning an integrated multilevel nonvolatile memory circuit
ATE209819T1 (de) Fortgeschrittene programmierverifikation für flash-speicher mit seitenmodus
US5818763A (en) Erasing method for a non-volatile memory

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee