US6275960B1 - Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof - Google Patents
Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof Download PDFInfo
- Publication number
- US6275960B1 US6275960B1 US09/212,896 US21289698A US6275960B1 US 6275960 B1 US6275960 B1 US 6275960B1 US 21289698 A US21289698 A US 21289698A US 6275960 B1 US6275960 B1 US 6275960B1
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- US
- United States
- Prior art keywords
- column
- parity
- row
- additional
- sector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
- G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97830693 | 1997-12-22 | ||
EP97830693A EP0926687B1 (en) | 1997-12-22 | 1997-12-22 | Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US6275960B1 true US6275960B1 (en) | 2001-08-14 |
Family
ID=8230908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/212,896 Expired - Lifetime US6275960B1 (en) | 1997-12-22 | 1998-12-16 | Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof |
Country Status (4)
Country | Link |
---|---|
US (1) | US6275960B1 (en) |
EP (1) | EP0926687B1 (en) |
JP (1) | JPH11260097A (en) |
DE (1) | DE69732637T2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6813752B1 (en) * | 2002-11-26 | 2004-11-02 | Advanced Micro Devices, Inc. | Method of determining charge loss activation energy of a memory array |
US20050108491A1 (en) * | 2003-11-17 | 2005-05-19 | Micron Technology, Inc. | Method for testing flash memory power loss recovery |
US6904400B1 (en) * | 1998-09-30 | 2005-06-07 | Stmicroelectronics S.R.L. | Flash EEPROM memory emulator of non-flash EEPROM device and corresponding method |
US20060112215A1 (en) * | 2004-11-19 | 2006-05-25 | Samsung Electronics Co., Ltd. | Apparatus and method for processing data of flash memory |
US20060120166A1 (en) * | 2004-11-16 | 2006-06-08 | Samsung Electronics Co., Ltd. | Data processing apparatus and method for flash memory |
WO2007110327A1 (en) * | 2006-03-24 | 2007-10-04 | Robert Bosch Gmbh | Method for operating a memory unit |
US20080043553A1 (en) * | 2006-08-16 | 2008-02-21 | Takahiro Suzuki | Semiconductor memory device and method of testing the same |
US20090073009A1 (en) * | 2007-09-14 | 2009-03-19 | Oki Electric Industry Co., Ltd. | Semiconductor memory device having error correction function |
US20100023841A1 (en) * | 2008-07-24 | 2010-01-28 | Atmel Automotive Gmbh | Memory system, sense amplifier, use, and method for error detection by means of parity bits of a block code |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60024564T2 (en) | 1999-11-01 | 2006-08-10 | Koninklijke Philips Electronics N.V. | Data circuit with a non-volatile memory and with an error-correcting circuit |
EP1096379B1 (en) * | 1999-11-01 | 2005-12-07 | Koninklijke Philips Electronics N.V. | Data processing circuit with non-volatile memory and error correction circuitry |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4768193A (en) * | 1985-05-16 | 1988-08-30 | Fujitsu Limited | Semiconductor memory device having error correction function and incorporating redundancy configuration |
US4939694A (en) * | 1986-11-03 | 1990-07-03 | Hewlett-Packard Company | Defect tolerant self-testing self-repairing memory system |
US5151906A (en) * | 1989-05-25 | 1992-09-29 | Rohm Co., Ltd. | Semiconductor memory device having self-correcting function |
US5475693A (en) | 1994-12-27 | 1995-12-12 | Intel Corporation | Error management processes for flash EEPROM memory arrays |
US5581567A (en) * | 1991-08-14 | 1996-12-03 | International Business Machines Corporation | Dual level error detection and correction employing data subsets from previously corrected data |
US5671239A (en) | 1993-09-20 | 1997-09-23 | Fujitsu Limited | Semiconductor memory of xN type having error correcting circuit by parity |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532962A (en) * | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
-
1997
- 1997-12-22 DE DE69732637T patent/DE69732637T2/en not_active Expired - Fee Related
- 1997-12-22 EP EP97830693A patent/EP0926687B1/en not_active Expired - Lifetime
-
1998
- 1998-12-16 US US09/212,896 patent/US6275960B1/en not_active Expired - Lifetime
- 1998-12-21 JP JP36334998A patent/JPH11260097A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4768193A (en) * | 1985-05-16 | 1988-08-30 | Fujitsu Limited | Semiconductor memory device having error correction function and incorporating redundancy configuration |
US4939694A (en) * | 1986-11-03 | 1990-07-03 | Hewlett-Packard Company | Defect tolerant self-testing self-repairing memory system |
US5151906A (en) * | 1989-05-25 | 1992-09-29 | Rohm Co., Ltd. | Semiconductor memory device having self-correcting function |
US5581567A (en) * | 1991-08-14 | 1996-12-03 | International Business Machines Corporation | Dual level error detection and correction employing data subsets from previously corrected data |
US5671239A (en) | 1993-09-20 | 1997-09-23 | Fujitsu Limited | Semiconductor memory of xN type having error correcting circuit by parity |
US5475693A (en) | 1994-12-27 | 1995-12-12 | Intel Corporation | Error management processes for flash EEPROM memory arrays |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6904400B1 (en) * | 1998-09-30 | 2005-06-07 | Stmicroelectronics S.R.L. | Flash EEPROM memory emulator of non-flash EEPROM device and corresponding method |
US6813752B1 (en) * | 2002-11-26 | 2004-11-02 | Advanced Micro Devices, Inc. | Method of determining charge loss activation energy of a memory array |
US7321951B2 (en) * | 2003-11-17 | 2008-01-22 | Micron Technology, Inc. | Method for testing flash memory power loss recovery |
US20050108491A1 (en) * | 2003-11-17 | 2005-05-19 | Micron Technology, Inc. | Method for testing flash memory power loss recovery |
US7613982B2 (en) | 2004-11-16 | 2009-11-03 | Samsung Electronics Co., Ltd. | Data processing apparatus and method for flash memory |
US20060120166A1 (en) * | 2004-11-16 | 2006-06-08 | Samsung Electronics Co., Ltd. | Data processing apparatus and method for flash memory |
EP1812866A4 (en) * | 2004-11-19 | 2009-01-07 | Samsung Electronics Co Ltd | Apparatus and method for processing data of flash memory |
EP1812866A1 (en) * | 2004-11-19 | 2007-08-01 | Samsung Electronics Co., Ltd. | Apparatus and method for processing data of flash memory |
US8230166B2 (en) | 2004-11-19 | 2012-07-24 | Samsung Electronics Co., Ltd. | Apparatus and method for processing data of flash memory |
US20060112215A1 (en) * | 2004-11-19 | 2006-05-25 | Samsung Electronics Co., Ltd. | Apparatus and method for processing data of flash memory |
US8015344B2 (en) | 2004-11-19 | 2011-09-06 | Samsung Electronics Co., Ltd. | Apparatus and method for processing data of flash memory |
WO2007110327A1 (en) * | 2006-03-24 | 2007-10-04 | Robert Bosch Gmbh | Method for operating a memory unit |
US8250321B2 (en) | 2006-03-24 | 2012-08-21 | Robert Bosch Gmbh | Method for operating a memory device |
US20090319732A1 (en) * | 2006-03-24 | 2009-12-24 | Joern Boettcher | Method for operating a memory device |
US7791967B2 (en) | 2006-08-16 | 2010-09-07 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of testing the same |
US20080043553A1 (en) * | 2006-08-16 | 2008-02-21 | Takahiro Suzuki | Semiconductor memory device and method of testing the same |
US7656322B2 (en) * | 2007-09-14 | 2010-02-02 | Oki Semiconductor Co., Ltd. | Semiconductor memory device having error correction function |
US20090073009A1 (en) * | 2007-09-14 | 2009-03-19 | Oki Electric Industry Co., Ltd. | Semiconductor memory device having error correction function |
US20100023841A1 (en) * | 2008-07-24 | 2010-01-28 | Atmel Automotive Gmbh | Memory system, sense amplifier, use, and method for error detection by means of parity bits of a block code |
US8397124B2 (en) | 2008-07-24 | 2013-03-12 | Atmel Corporation | Memory system, sense amplifier, use, and method for error detection by means of parity bits of a block code |
Also Published As
Publication number | Publication date |
---|---|
EP0926687A1 (en) | 1999-06-30 |
DE69732637D1 (en) | 2005-04-07 |
DE69732637T2 (en) | 2005-12-29 |
EP0926687B1 (en) | 2005-03-02 |
JPH11260097A (en) | 1999-09-24 |
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