DE69730818D1 - Vorrichtung und verfahren zur kühlung von in einer ionenimplantationsanlage behandelten werkstücken - Google Patents
Vorrichtung und verfahren zur kühlung von in einer ionenimplantationsanlage behandelten werkstückenInfo
- Publication number
- DE69730818D1 DE69730818D1 DE69730818T DE69730818T DE69730818D1 DE 69730818 D1 DE69730818 D1 DE 69730818D1 DE 69730818 T DE69730818 T DE 69730818T DE 69730818 T DE69730818 T DE 69730818T DE 69730818 D1 DE69730818 D1 DE 69730818D1
- Authority
- DE
- Germany
- Prior art keywords
- ion implantation
- implantation system
- workpieces treated
- cooling workpieces
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/184—Vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/204—Means for introducing and/or outputting objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Combustion & Propulsion (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60198396A | 1996-02-16 | 1996-02-16 | |
US601983 | 1996-02-16 | ||
US756972 | 1996-11-26 | ||
US08/756,972 US5828070A (en) | 1996-02-16 | 1996-11-26 | System and method for cooling workpieces processed by an ion implantation system |
PCT/US1997/002557 WO1997030471A1 (en) | 1996-02-16 | 1997-02-14 | System and method for cooling workpieces processed by an ion implantation system |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69730818D1 true DE69730818D1 (de) | 2004-10-28 |
DE69730818T2 DE69730818T2 (de) | 2006-02-23 |
DE69730818T8 DE69730818T8 (de) | 2006-04-27 |
Family
ID=27084016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69730818T Expired - Fee Related DE69730818T8 (de) | 1996-02-16 | 1997-02-14 | Vorrichtung und verfahren zur kühlung von in einer ionenimplantationsanlage behandelten werkstücken |
Country Status (7)
Country | Link |
---|---|
US (1) | US5828070A (de) |
EP (1) | EP0880798B1 (de) |
JP (1) | JP2000504877A (de) |
KR (1) | KR100466703B1 (de) |
AU (1) | AU2052397A (de) |
DE (1) | DE69730818T8 (de) |
WO (1) | WO1997030471A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6701972B2 (en) | 2002-01-11 | 2004-03-09 | The Boc Group, Inc. | Vacuum load lock, system including vacuum load lock, and associated methods |
US6914251B1 (en) * | 2003-03-07 | 2005-07-05 | Axcelis Technologies, Inc. | Alignment structure and method for mating a wafer delivery device to a wafer treatment tool |
US20060163490A1 (en) * | 2005-01-21 | 2006-07-27 | Advanced Ion Beam Technology Inc. | Ion implantation cooling system |
US20100181500A1 (en) * | 2009-01-16 | 2010-07-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for low temperature ion implantation |
US8330101B2 (en) * | 2010-01-19 | 2012-12-11 | Agilent Technologies, Inc. | System and method for replacing an ion source in a mass spectrometer |
US9236216B2 (en) | 2012-08-03 | 2016-01-12 | Axcelis Technologies, Inc. | In-vacuum high speed pre-chill and post-heat stations |
KR20200011709A (ko) | 2018-07-25 | 2020-02-04 | (주)대한솔루션 | 연월일 표시기 |
US20220093426A1 (en) * | 2020-09-21 | 2022-03-24 | Applied Materials, Inc. | Movable semiconductor processing chamber for improved serviceability |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3954191A (en) * | 1974-11-18 | 1976-05-04 | Extrion Corporation | Isolation lock for workpieces |
US4228358A (en) * | 1979-05-23 | 1980-10-14 | Nova Associates, Inc. | Wafer loading apparatus for beam treatment |
US4229655A (en) * | 1979-05-23 | 1980-10-21 | Nova Associates, Inc. | Vacuum chamber for treating workpieces with beams |
US4234797A (en) * | 1979-05-23 | 1980-11-18 | Nova Associates, Inc. | Treating workpieces with beams |
US4346301A (en) * | 1979-07-30 | 1982-08-24 | Hughes Aircraft Company | Ion implantation system |
US4258266A (en) * | 1979-07-30 | 1981-03-24 | Hughes Aircraft Company | Ion implantation system |
US4261762A (en) * | 1979-09-14 | 1981-04-14 | Eaton Corporation | Method for conducting heat to or from an article being treated under vacuum |
US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
US4433951A (en) * | 1981-02-13 | 1984-02-28 | Lam Research Corporation | Modular loadlock |
US4550239A (en) * | 1981-10-05 | 1985-10-29 | Tokyo Denshi Kagaku Kabushiki Kaisha | Automatic plasma processing device and heat treatment device |
US4517465A (en) * | 1983-03-29 | 1985-05-14 | Veeco/Ai, Inc. | Ion implantation control system |
US4568234A (en) * | 1983-05-23 | 1986-02-04 | Asq Boats, Inc. | Wafer transfer apparatus |
US4542298A (en) * | 1983-06-09 | 1985-09-17 | Varian Associates, Inc. | Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer |
US4553069A (en) * | 1984-01-05 | 1985-11-12 | General Ionex Corporation | Wafer holding apparatus for ion implantation |
EP0155700B1 (de) * | 1984-03-22 | 1990-01-31 | Nippon Telegraph And Telephone Corporation | Quantitative Sekundärionen-Massenspektrometrie-Gerät |
US4705951A (en) * | 1986-04-17 | 1987-11-10 | Varian Associates, Inc. | Wafer processing system |
US4836733A (en) * | 1986-04-28 | 1989-06-06 | Varian Associates, Inc. | Wafer transfer system |
US4917556A (en) * | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
US4745287A (en) * | 1986-10-23 | 1988-05-17 | Ionex/Hei | Ion implantation with variable implant angle |
US4911103A (en) * | 1987-07-17 | 1990-03-27 | Texas Instruments Incorporated | Processing apparatus and method |
US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
JP2748127B2 (ja) * | 1988-09-02 | 1998-05-06 | キヤノン株式会社 | ウエハ保持方法 |
DE68922061T2 (de) * | 1988-10-03 | 1995-08-31 | Canon Kk | Vorrichtung zum Regeln der Temperatur. |
US5180000A (en) * | 1989-05-08 | 1993-01-19 | Balzers Aktiengesellschaft | Workpiece carrier with suction slot for a disk-shaped workpiece |
DE3943478C2 (de) * | 1989-05-08 | 1995-11-16 | Philips Electronics Nv | Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumbehandlungsanlage |
ES2054357T3 (es) * | 1989-05-08 | 1994-08-01 | Philips Nv | Aparato y metodo para tratar substratos planos bajo una presion reducida. |
DE69130434T2 (de) * | 1990-06-29 | 1999-04-29 | Canon Kk | Platte zum Arbeiten unter Vakuum |
TW221318B (de) * | 1990-07-31 | 1994-02-21 | Tokyo Electron Co Ltd | |
JP2591360B2 (ja) * | 1991-05-08 | 1997-03-19 | 株式会社日立製作所 | フォトレジストの塗布方法 |
JP2751975B2 (ja) * | 1991-12-20 | 1998-05-18 | 株式会社日立製作所 | 半導体処理装置のロードロック室 |
US5229615A (en) * | 1992-03-05 | 1993-07-20 | Eaton Corporation | End station for a parallel beam ion implanter |
US5404894A (en) * | 1992-05-20 | 1995-04-11 | Tokyo Electron Kabushiki Kaisha | Conveyor apparatus |
US5308989A (en) * | 1992-12-22 | 1994-05-03 | Eaton Corporation | Fluid flow control method and apparatus for an ion implanter |
JPH0758191A (ja) * | 1993-08-13 | 1995-03-03 | Toshiba Corp | ウェハステージ装置 |
JPH0786342A (ja) * | 1993-09-16 | 1995-03-31 | Hitachi Ltd | ウェハチャックおよび半導体素子の検査方法 |
US5447431A (en) * | 1993-10-29 | 1995-09-05 | Brooks Automation, Inc. | Low-gas temperature stabilization system |
US5588827A (en) * | 1993-12-17 | 1996-12-31 | Brooks Automation Inc. | Passive gas substrate thermal conditioning apparatus and method |
JPH07235588A (ja) * | 1994-02-24 | 1995-09-05 | Hitachi Ltd | ウエハチャック及びそれを用いたプローブ検査方法 |
-
1996
- 1996-11-26 US US08/756,972 patent/US5828070A/en not_active Expired - Lifetime
-
1997
- 1997-02-14 WO PCT/US1997/002557 patent/WO1997030471A1/en active IP Right Grant
- 1997-02-14 EP EP97908672A patent/EP0880798B1/de not_active Expired - Lifetime
- 1997-02-14 AU AU20523/97A patent/AU2052397A/en not_active Abandoned
- 1997-02-14 KR KR10-1998-0706330A patent/KR100466703B1/ko active IP Right Grant
- 1997-02-14 DE DE69730818T patent/DE69730818T8/de not_active Expired - Fee Related
- 1997-02-14 JP JP9529576A patent/JP2000504877A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
AU2052397A (en) | 1997-09-02 |
DE69730818T2 (de) | 2006-02-23 |
WO1997030471A1 (en) | 1997-08-21 |
KR19990082592A (ko) | 1999-11-25 |
EP0880798B1 (de) | 2004-09-22 |
US5828070A (en) | 1998-10-27 |
JP2000504877A (ja) | 2000-04-18 |
KR100466703B1 (ko) | 2005-06-29 |
EP0880798A1 (de) | 1998-12-02 |
DE69730818T8 (de) | 2006-04-27 |
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