DE69730333T2 - Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen - Google Patents

Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen Download PDF

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Publication number
DE69730333T2
DE69730333T2 DE69730333T DE69730333T DE69730333T2 DE 69730333 T2 DE69730333 T2 DE 69730333T2 DE 69730333 T DE69730333 T DE 69730333T DE 69730333 T DE69730333 T DE 69730333T DE 69730333 T2 DE69730333 T2 DE 69730333T2
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DE
Germany
Prior art keywords
layer
gate
openings
primary
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69730333T
Other languages
German (de)
English (en)
Other versions
DE69730333D1 (de
Inventor
N. Paul LUDWIG
A. Duane HAVEN
M. John MACAULAY
J. Christopher SPINDT
M. James CLEEVES
Johan N. Knall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Candescent Intellectual Property Services Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/660,536 external-priority patent/US6187603B1/en
Priority claimed from US08/660,538 external-priority patent/US5865659A/en
Application filed by Candescent Intellectual Property Services Inc filed Critical Candescent Intellectual Property Services Inc
Publication of DE69730333D1 publication Critical patent/DE69730333D1/de
Application granted granted Critical
Publication of DE69730333T2 publication Critical patent/DE69730333T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69730333T 1996-06-07 1997-06-05 Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen Expired - Lifetime DE69730333T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/660,536 US6187603B1 (en) 1996-06-07 1996-06-07 Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US660538 1996-06-07
US08/660,538 US5865659A (en) 1996-06-07 1996-06-07 Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
US660536 1996-06-07
PCT/US1997/009198 WO1997047021A1 (en) 1996-06-07 1997-06-05 Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings

Publications (2)

Publication Number Publication Date
DE69730333D1 DE69730333D1 (de) 2004-09-23
DE69730333T2 true DE69730333T2 (de) 2005-09-01

Family

ID=27098119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730333T Expired - Lifetime DE69730333T2 (de) 1996-06-07 1997-06-05 Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen

Country Status (6)

Country Link
EP (1) EP0922293B1 (ja)
JP (1) JP4226651B2 (ja)
KR (1) KR100323289B1 (ja)
DE (1) DE69730333T2 (ja)
TW (1) TW389928B (ja)
WO (1) WO1997047021A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007396A (en) * 1997-04-30 1999-12-28 Candescent Technologies Corporation Field emitter fabrication using megasonic assisted lift off
FR2779243B1 (fr) * 1998-05-26 2000-07-07 Commissariat Energie Atomique Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes
GB2349271B (en) * 1998-07-23 2001-08-29 Sony Corp Cold cathode field emission device and cold cathode field emission display
US6297587B1 (en) 1998-07-23 2001-10-02 Sony Corporation Color cathode field emission device, cold cathode field emission display, and process for the production thereof
JP2000235832A (ja) * 1998-07-23 2000-08-29 Sony Corp 冷陰極電界電子放出素子、冷陰極電界電子放出型表示装置、及びそれらの製造方法
KR100601973B1 (ko) 2004-11-25 2006-07-18 삼성전자주식회사 나노 입자를 이용한 나노 스케일의 반도체 소자의 제조 방법
JP2009170280A (ja) * 2008-01-17 2009-07-30 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
TWI441237B (zh) * 2012-05-31 2014-06-11 Au Optronics Corp 場發射顯示器之畫素結構的製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407695A (en) * 1981-12-31 1983-10-04 Exxon Research And Engineering Co. Natural lithographic fabrication of microstructures over large areas
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
JP2717048B2 (ja) * 1992-11-12 1998-02-18 株式会社日立製作所 磁気ディスク製造方法および製造装置
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
DE4331185C1 (de) * 1993-09-14 1994-12-15 Siemens Ag Verfahren zur Kontaktlochauffüllung in einem Halbleiterschichtaufbau
US5466626A (en) * 1993-12-16 1995-11-14 International Business Machines Corporation Micro mask comprising agglomerated material
US5538450A (en) * 1994-04-29 1996-07-23 Texas Instruments Incorporated Method of forming a size-arrayed emitter matrix for use in a flat panel display
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
FR2725558B1 (fr) * 1994-10-10 1996-10-31 Commissariat Energie Atomique Procede de formation de trous dans une couche de resine photosensible application a la fabrication de sources d'electrons a cathodes emissives a micropointes et d'ecrans plats de visualisation
US5509840A (en) * 1994-11-28 1996-04-23 Industrial Technology Research Institute Fabrication of high aspect ratio spacers for field emission display
US5865657A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material

Also Published As

Publication number Publication date
EP0922293A4 (ja) 1999-06-16
EP0922293A1 (en) 1999-06-16
KR100323289B1 (ko) 2002-03-08
DE69730333D1 (de) 2004-09-23
JP2000512067A (ja) 2000-09-12
EP0922293B1 (en) 2004-08-18
KR20000016555A (ko) 2000-03-25
JP4226651B2 (ja) 2009-02-18
TW389928B (en) 2000-05-11
WO1997047021A1 (en) 1997-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: CANON K.K., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN