DE69730333T2 - Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen - Google Patents
Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen Download PDFInfo
- Publication number
- DE69730333T2 DE69730333T2 DE69730333T DE69730333T DE69730333T2 DE 69730333 T2 DE69730333 T2 DE 69730333T2 DE 69730333 T DE69730333 T DE 69730333T DE 69730333 T DE69730333 T DE 69730333T DE 69730333 T2 DE69730333 T2 DE 69730333T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- gate
- openings
- primary
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
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- 238000004070 electrodeposition Methods 0.000 description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
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- 229910052581 Si3N4 Inorganic materials 0.000 description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
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- 239000010937 tungsten Substances 0.000 description 7
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- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- -1 graphite Chemical compound 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical class [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Chemical group 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001408 amides Chemical group 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US660538 | 1996-06-07 | ||
| US08/660,536 US6187603B1 (en) | 1996-06-07 | 1996-06-07 | Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material |
| US660536 | 1996-06-07 | ||
| US08/660,538 US5865659A (en) | 1996-06-07 | 1996-06-07 | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements |
| PCT/US1997/009198 WO1997047021A1 (en) | 1996-06-07 | 1997-06-05 | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69730333D1 DE69730333D1 (de) | 2004-09-23 |
| DE69730333T2 true DE69730333T2 (de) | 2005-09-01 |
Family
ID=27098119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69730333T Expired - Lifetime DE69730333T2 (de) | 1996-06-07 | 1997-06-05 | Herstellung von gittergesteuerter elektronen emittierende quelle mittels verteilte teilchen zur bestimmung der gitteröffnungen |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0922293B1 (enrdf_load_stackoverflow) |
| JP (1) | JP4226651B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100323289B1 (enrdf_load_stackoverflow) |
| DE (1) | DE69730333T2 (enrdf_load_stackoverflow) |
| TW (1) | TW389928B (enrdf_load_stackoverflow) |
| WO (1) | WO1997047021A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007396A (en) * | 1997-04-30 | 1999-12-28 | Candescent Technologies Corporation | Field emitter fabrication using megasonic assisted lift off |
| FR2779243B1 (fr) | 1998-05-26 | 2000-07-07 | Commissariat Energie Atomique | Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes |
| US6297587B1 (en) | 1998-07-23 | 2001-10-02 | Sony Corporation | Color cathode field emission device, cold cathode field emission display, and process for the production thereof |
| JP2000235832A (ja) * | 1998-07-23 | 2000-08-29 | Sony Corp | 冷陰極電界電子放出素子、冷陰極電界電子放出型表示装置、及びそれらの製造方法 |
| GB2349271B (en) * | 1998-07-23 | 2001-08-29 | Sony Corp | Cold cathode field emission device and cold cathode field emission display |
| KR100601973B1 (ko) | 2004-11-25 | 2006-07-18 | 삼성전자주식회사 | 나노 입자를 이용한 나노 스케일의 반도체 소자의 제조 방법 |
| JP2009170280A (ja) * | 2008-01-17 | 2009-07-30 | Sony Corp | 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法 |
| TWI441237B (zh) * | 2012-05-31 | 2014-06-11 | Au Optronics Corp | 場發射顯示器之畫素結構的製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407695A (en) * | 1981-12-31 | 1983-10-04 | Exxon Research And Engineering Co. | Natural lithographic fabrication of microstructures over large areas |
| US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
| US5249340A (en) * | 1991-06-24 | 1993-10-05 | Motorola, Inc. | Field emission device employing a selective electrode deposition method |
| JP2717048B2 (ja) * | 1992-11-12 | 1998-02-18 | 株式会社日立製作所 | 磁気ディスク製造方法および製造装置 |
| US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
| DE4331185C1 (de) * | 1993-09-14 | 1994-12-15 | Siemens Ag | Verfahren zur Kontaktlochauffüllung in einem Halbleiterschichtaufbau |
| US5466626A (en) * | 1993-12-16 | 1995-11-14 | International Business Machines Corporation | Micro mask comprising agglomerated material |
| US5538450A (en) * | 1994-04-29 | 1996-07-23 | Texas Instruments Incorporated | Method of forming a size-arrayed emitter matrix for use in a flat panel display |
| US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
| FR2725558B1 (fr) * | 1994-10-10 | 1996-10-31 | Commissariat Energie Atomique | Procede de formation de trous dans une couche de resine photosensible application a la fabrication de sources d'electrons a cathodes emissives a micropointes et d'ecrans plats de visualisation |
| US5509840A (en) * | 1994-11-28 | 1996-04-23 | Industrial Technology Research Institute | Fabrication of high aspect ratio spacers for field emission display |
| US5865657A (en) * | 1996-06-07 | 1999-02-02 | Candescent Technologies Corporation | Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material |
-
1997
- 1997-06-05 WO PCT/US1997/009198 patent/WO1997047021A1/en active IP Right Grant
- 1997-06-05 EP EP97927842A patent/EP0922293B1/en not_active Expired - Lifetime
- 1997-06-05 KR KR1019980710145A patent/KR100323289B1/ko not_active Expired - Fee Related
- 1997-06-05 DE DE69730333T patent/DE69730333T2/de not_active Expired - Lifetime
- 1997-06-05 JP JP50069898A patent/JP4226651B2/ja not_active Expired - Fee Related
- 1997-06-07 TW TW086107885A patent/TW389928B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000016555A (ko) | 2000-03-25 |
| DE69730333D1 (de) | 2004-09-23 |
| EP0922293A4 (enrdf_load_stackoverflow) | 1999-06-16 |
| JP4226651B2 (ja) | 2009-02-18 |
| JP2000512067A (ja) | 2000-09-12 |
| EP0922293B1 (en) | 2004-08-18 |
| EP0922293A1 (en) | 1999-06-16 |
| WO1997047021A1 (en) | 1997-12-11 |
| TW389928B (en) | 2000-05-11 |
| KR100323289B1 (ko) | 2002-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: CANON K.K., TOKYO, JP |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN |