DE69723537T2 - RF Schaltzellen - Google Patents
RF Schaltzellen Download PDFInfo
- Publication number
- DE69723537T2 DE69723537T2 DE69723537T DE69723537T DE69723537T2 DE 69723537 T2 DE69723537 T2 DE 69723537T2 DE 69723537 T DE69723537 T DE 69723537T DE 69723537 T DE69723537 T DE 69723537T DE 69723537 T2 DE69723537 T2 DE 69723537T2
- Authority
- DE
- Germany
- Prior art keywords
- switch cells
- cells
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/746,589 US5786722A (en) | 1996-11-12 | 1996-11-12 | Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69723537D1 DE69723537D1 (de) | 2003-08-21 |
DE69723537T2 true DE69723537T2 (de) | 2004-01-29 |
Family
ID=25001485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69723537T Expired - Fee Related DE69723537T2 (de) | 1996-11-12 | 1997-11-04 | RF Schaltzellen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5786722A (de) |
EP (1) | EP0845829B1 (de) |
JP (1) | JP4128252B2 (de) |
BR (1) | BR9705480A (de) |
CA (1) | CA2217595C (de) |
DE (1) | DE69723537T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6172405B1 (en) * | 1998-07-17 | 2001-01-09 | Sharp Kabushiki Kaisha | Semiconductor device and production process therefore |
CA2313710C (en) | 1999-07-23 | 2004-02-17 | Babur B. Hadimioglu | An acoustic ink jet printhead design and method of operation utilizing ink cross-flow |
JP2001315328A (ja) | 2000-05-08 | 2001-11-13 | Fuji Xerox Co Ltd | インクジェッ卜記録装置の駆動装置 |
US6426630B1 (en) | 2000-11-29 | 2002-07-30 | Xerox Corporation | Electrostatic voltmeter with current source load |
US6464337B2 (en) | 2001-01-31 | 2002-10-15 | Xerox Corporation | Apparatus and method for acoustic ink printing using a bilayer printhead configuration |
US7697027B2 (en) * | 2001-07-31 | 2010-04-13 | Donnelly Corporation | Vehicular video system |
US7005974B2 (en) * | 2002-04-19 | 2006-02-28 | Donnelly Corporation | Vehicle imaging system |
JP3946077B2 (ja) * | 2002-04-24 | 2007-07-18 | 富士通株式会社 | ラッチ形レベルコンバータおよび受信回路 |
US6900711B2 (en) | 2002-09-30 | 2005-05-31 | Agilent Technologies, Inc. | Switching system |
US8125007B2 (en) * | 2009-11-20 | 2012-02-28 | International Business Machines Corporation | Integrated circuit including FinFET RF switch angled relative to planar MOSFET and related design structure |
JP6564444B2 (ja) | 2017-11-22 | 2019-08-21 | 大森機械工業株式会社 | シュリンク包装機における熱収縮装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
US3145266A (en) * | 1961-06-29 | 1964-08-18 | Gen Electric | A. c. static switching circuits |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
JPS6055972B2 (ja) * | 1978-08-18 | 1985-12-07 | 東芝テック株式会社 | 進相洩れ変圧器型放電灯用安定器 |
JPS60176321A (ja) * | 1984-02-22 | 1985-09-10 | Hayashibara Takeshi | 磁力線パルス発生装置 |
GB2198604B (en) * | 1986-11-15 | 1991-02-13 | Brother Ind Ltd | Piezoelectric element drive circuit |
FR2635931A1 (fr) * | 1988-08-26 | 1990-03-02 | Cgr Mev | Dispositif de protection d'un modulateur a ligne a retard |
US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
JPH0736567B2 (ja) * | 1989-03-17 | 1995-04-19 | 株式会社日立製作所 | パルス信号の伝送方法、パルス信号の伝送装置及びパルス信号の伝送に適した半導体スイツチ |
DE68925116T2 (de) * | 1989-06-28 | 1996-05-09 | Sgs Thomson Microelectronics | In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür |
FR2664744B1 (fr) * | 1990-07-16 | 1993-08-06 | Sgs Thomson Microelectronics | Diode pin a faible surtension initiale. |
US5142256A (en) * | 1991-04-04 | 1992-08-25 | Motorola, Inc. | Pin diode with field emission device switch |
JPH05121684A (ja) * | 1991-10-25 | 1993-05-18 | Olympus Optical Co Ltd | 保護ダイオードを備えたcmos半導体装置 |
US5446302A (en) * | 1993-12-14 | 1995-08-29 | Analog Devices, Incorporated | Integrated circuit with diode-connected transistor for reducing ESD damage |
US5477078A (en) * | 1994-02-18 | 1995-12-19 | Analog Devices, Incorporated | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
-
1996
- 1996-11-12 US US08/746,589 patent/US5786722A/en not_active Expired - Lifetime
-
1997
- 1997-10-07 CA CA002217595A patent/CA2217595C/en not_active Expired - Fee Related
- 1997-11-04 EP EP97308832A patent/EP0845829B1/de not_active Expired - Lifetime
- 1997-11-04 DE DE69723537T patent/DE69723537T2/de not_active Expired - Fee Related
- 1997-11-11 JP JP30890197A patent/JP4128252B2/ja not_active Expired - Fee Related
- 1997-11-12 BR BR9705480A patent/BR9705480A/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2217595A1 (en) | 1998-05-12 |
EP0845829A3 (de) | 1999-05-06 |
BR9705480A (pt) | 1999-05-11 |
DE69723537D1 (de) | 2003-08-21 |
EP0845829B1 (de) | 2003-07-16 |
EP0845829A2 (de) | 1998-06-03 |
JPH10199995A (ja) | 1998-07-31 |
JP4128252B2 (ja) | 2008-07-30 |
CA2217595C (en) | 2001-04-10 |
US5786722A (en) | 1998-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |