DE69719188D1 - Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren - Google Patents

Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren

Info

Publication number
DE69719188D1
DE69719188D1 DE69719188T DE69719188T DE69719188D1 DE 69719188 D1 DE69719188 D1 DE 69719188D1 DE 69719188 T DE69719188 T DE 69719188T DE 69719188 T DE69719188 T DE 69719188T DE 69719188 D1 DE69719188 D1 DE 69719188D1
Authority
DE
Germany
Prior art keywords
voltage control
control circuit
control method
high voltage
corresponding voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69719188T
Other languages
English (en)
Other versions
DE69719188T2 (de
Inventor
Andrea Ghilardelli
Francesco Maria Brani
Carla Golla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69719188D1 publication Critical patent/DE69719188D1/de
Publication of DE69719188T2 publication Critical patent/DE69719188T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dc-Dc Converters (AREA)
DE1997619188 1997-11-05 1997-11-05 Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren Expired - Fee Related DE69719188T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19970830575 EP0915408B1 (de) 1997-11-05 1997-11-05 Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren

Publications (2)

Publication Number Publication Date
DE69719188D1 true DE69719188D1 (de) 2003-03-27
DE69719188T2 DE69719188T2 (de) 2003-12-04

Family

ID=8230847

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997619188 Expired - Fee Related DE69719188T2 (de) 1997-11-05 1997-11-05 Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren

Country Status (2)

Country Link
EP (1) EP0915408B1 (de)
DE (1) DE69719188T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180173259A1 (en) * 2016-12-20 2018-06-21 Silicon Laboratories Inc. Apparatus for Regulator with Improved Performance and Associated Methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로
JP2642512B2 (ja) * 1990-11-16 1997-08-20 シャープ株式会社 半導体集積回路
US5162668A (en) * 1990-12-14 1992-11-10 International Business Machines Corporation Small dropout on-chip voltage regulators with boosted power supply
FR2681180B1 (fr) * 1991-09-05 1996-10-25 Gemplus Card Int Circuit de regulation de tension de programmation, pour memoires programmables.
US5530640A (en) * 1992-10-13 1996-06-25 Mitsubishi Denki Kabushiki Kaisha IC substrate and boosted voltage generation circuits
JP2740626B2 (ja) * 1992-10-13 1998-04-15 三菱電機株式会社 電圧発生回路

Also Published As

Publication number Publication date
DE69719188T2 (de) 2003-12-04
EP0915408A1 (de) 1999-05-12
EP0915408B1 (de) 2003-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee