DE69718718T2 - Supraleitendes Tunnel-Sperrschichtelement und supraleitende Vorrichtung - Google Patents

Supraleitendes Tunnel-Sperrschichtelement und supraleitende Vorrichtung

Info

Publication number
DE69718718T2
DE69718718T2 DE69718718T DE69718718T DE69718718T2 DE 69718718 T2 DE69718718 T2 DE 69718718T2 DE 69718718 T DE69718718 T DE 69718718T DE 69718718 T DE69718718 T DE 69718718T DE 69718718 T2 DE69718718 T2 DE 69718718T2
Authority
DE
Germany
Prior art keywords
superconducting
tunnel junction
junction element
superconducting device
superconducting tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69718718T
Other languages
English (en)
Other versions
DE69718718D1 (de
Inventor
Hideaki Adachi
Masahiro Sakai
Akihiro Odagawa
Kentaro Setsune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69718718D1 publication Critical patent/DE69718718D1/de
Publication of DE69718718T2 publication Critical patent/DE69718718T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69718718T 1996-07-09 1997-07-05 Supraleitendes Tunnel-Sperrschichtelement und supraleitende Vorrichtung Expired - Fee Related DE69718718T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17889196 1996-07-09
JP33865196 1996-12-18

Publications (2)

Publication Number Publication Date
DE69718718D1 DE69718718D1 (de) 2003-03-06
DE69718718T2 true DE69718718T2 (de) 2003-08-14

Family

ID=26498928

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69718718T Expired - Fee Related DE69718718T2 (de) 1996-07-09 1997-07-05 Supraleitendes Tunnel-Sperrschichtelement und supraleitende Vorrichtung

Country Status (3)

Country Link
US (1) US5885937A (de)
EP (1) EP0818831B1 (de)
DE (1) DE69718718T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US8055318B1 (en) * 2008-04-23 2011-11-08 Hypres, Inc. Superconducting integrated circuit technology using iron-arsenic compounds
RU2541679C1 (ru) * 2013-07-16 2015-02-20 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Способ изготовления сверхпроводящих наноэлементов с туннельными или джозефсоновскими переходами
RU2598405C1 (ru) * 2015-07-22 2016-09-27 ФАНО России Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук Сверхпроводниковый джозефсоновский прибор с композитной магнитоактивной прослойкой

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740260B2 (ja) * 1988-05-11 1998-04-15 キヤノン株式会社 ジョセフソン素子
US5362709A (en) * 1988-09-22 1994-11-08 Semiconductor Energy Laboratory, Co., Ltd. Superconducting device
JPH02177381A (ja) * 1988-09-22 1990-07-10 Semiconductor Energy Lab Co Ltd 超伝導体のトンネル接合素子
DE69117378T2 (de) * 1990-07-19 1996-09-12 Sumitomo Electric Industries Supraleitende Einrichtung mit geschichteter Struktur, zusammengesetzt aus oxidischem Supraleiter und Isolatordünnschicht und deren Herstellungsmethode
JPH04130679A (ja) * 1990-09-20 1992-05-01 Sumitomo Electric Ind Ltd 超電導接合
EP0494830B1 (de) * 1991-01-10 1997-06-18 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung eines Tunnelüberganges von der Art einer Josephson-Einrichtung aufgebaut aus supraleitendem oxydischem Verbundmaterial

Also Published As

Publication number Publication date
DE69718718D1 (de) 2003-03-06
EP0818831A2 (de) 1998-01-14
EP0818831B1 (de) 2003-01-29
EP0818831A3 (de) 1998-09-09
US5885937A (en) 1999-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee