DE69715368D1 - Normal leitender dual-thyristor - Google Patents

Normal leitender dual-thyristor

Info

Publication number
DE69715368D1
DE69715368D1 DE69715368T DE69715368T DE69715368D1 DE 69715368 D1 DE69715368 D1 DE 69715368D1 DE 69715368 T DE69715368 T DE 69715368T DE 69715368 T DE69715368 T DE 69715368T DE 69715368 D1 DE69715368 D1 DE 69715368D1
Authority
DE
Germany
Prior art keywords
normal leading
dual thyristor
leading dual
thyristor
normal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69715368T
Other languages
English (en)
Other versions
DE69715368T2 (de
Inventor
Jean-Louis Sanchez
Jean Jalade
Jean-Pierre Laur
Henri Foch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE69715368D1 publication Critical patent/DE69715368D1/de
Publication of DE69715368T2 publication Critical patent/DE69715368T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69715368T 1996-10-04 1997-10-03 Normal leitender dual-thyristor Expired - Lifetime DE69715368T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9612323A FR2754392B1 (fr) 1996-10-04 1996-10-04 Thyristor dual normalement passant blocable par une impulsion appliquee sur la gachette
PCT/FR1997/001756 WO1998015982A1 (fr) 1996-10-04 1997-10-03 Thyristor dual normalement passant

Publications (2)

Publication Number Publication Date
DE69715368D1 true DE69715368D1 (de) 2002-10-17
DE69715368T2 DE69715368T2 (de) 2003-07-31

Family

ID=9496507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715368T Expired - Lifetime DE69715368T2 (de) 1996-10-04 1997-10-03 Normal leitender dual-thyristor

Country Status (6)

Country Link
US (1) US6188267B1 (de)
EP (1) EP0865671B1 (de)
JP (1) JP4300590B2 (de)
DE (1) DE69715368T2 (de)
FR (1) FR2754392B1 (de)
WO (1) WO1998015982A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781899B1 (fr) * 1998-07-30 2000-10-06 St Microelectronics Sa Generateur de courant constant
FR2808621B1 (fr) * 2000-05-05 2002-07-19 St Microelectronics Sa Composant monolithique a commande unique pour un pont mixte
FR2809234B1 (fr) * 2000-05-22 2002-08-02 Minarro Bernot Ind Diffusion C Thyristor dual, thyristor diode dual, thysistor, thysistor diode, convertisseur et interrupteur
EP1298802A1 (de) * 2001-09-28 2003-04-02 ABB Schweiz AG Verfahren zum Ansteuern eines Leistungshalbleiters
TWI469306B (zh) * 2011-04-29 2015-01-11 Faraday Tech Corp 靜電放電保護電路
CN104579271A (zh) * 2013-10-11 2015-04-29 东林科技股份有限公司 开关装置
JP6831752B2 (ja) 2016-06-08 2021-02-17 パナソニック株式会社 基板電圧制御回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
US5349212A (en) * 1992-06-01 1994-09-20 Fuji Electric Co., Ltd. Semiconductor device having thyristor structure

Also Published As

Publication number Publication date
DE69715368T2 (de) 2003-07-31
FR2754392B1 (fr) 1999-04-30
US6188267B1 (en) 2001-02-13
JP2000502513A (ja) 2000-02-29
JP4300590B2 (ja) 2009-07-22
EP0865671A1 (de) 1998-09-23
WO1998015982A1 (fr) 1998-04-16
FR2754392A1 (fr) 1998-04-10
EP0865671B1 (de) 2002-09-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition