DE69714575D1 - Laterales PNP-bipolares elektronisches Bauelement und dessen Herstellungsverfahren - Google Patents

Laterales PNP-bipolares elektronisches Bauelement und dessen Herstellungsverfahren

Info

Publication number
DE69714575D1
DE69714575D1 DE69714575T DE69714575T DE69714575D1 DE 69714575 D1 DE69714575 D1 DE 69714575D1 DE 69714575 T DE69714575 T DE 69714575T DE 69714575 T DE69714575 T DE 69714575T DE 69714575 D1 DE69714575 D1 DE 69714575D1
Authority
DE
Germany
Prior art keywords
electronic component
manufacturing process
pnp bipolar
lateral pnp
bipolar electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69714575T
Other languages
English (en)
Inventor
Angelo Pinto
Carlo Alemanni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69714575D1 publication Critical patent/DE69714575D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69714575T 1997-05-30 1997-05-30 Laterales PNP-bipolares elektronisches Bauelement und dessen Herstellungsverfahren Expired - Lifetime DE69714575D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830260A EP0881689B1 (de) 1997-05-30 1997-05-30 Laterales PNP-bipolares elektronisches Bauelement und dessen Herstellungsverfahren

Publications (1)

Publication Number Publication Date
DE69714575D1 true DE69714575D1 (de) 2002-09-12

Family

ID=8230653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69714575T Expired - Lifetime DE69714575D1 (de) 1997-05-30 1997-05-30 Laterales PNP-bipolares elektronisches Bauelement und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6146956A (de)
EP (1) EP0881689B1 (de)
JP (1) JPH10335346A (de)
DE (1) DE69714575D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002080281A1 (en) * 2001-04-02 2002-10-10 The Regent Of The University Of California Horizontal current bipolar transistor
US6624497B2 (en) 2002-02-25 2003-09-23 Intersil Americas, Inc Semiconductor device with a reduced mask count buried layer
US20030162360A1 (en) 2002-02-25 2003-08-28 Beasom James D. Reduced mask count buried layer process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437897A (en) * 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
US4507171A (en) * 1982-08-06 1985-03-26 International Business Machines Corporation Method for contacting a narrow width PN junction region
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
US4669177A (en) * 1985-10-28 1987-06-02 Texas Instruments Incorporated Process for making a lateral bipolar transistor in a standard CSAG process
JPH03201564A (ja) * 1989-12-28 1991-09-03 Toshiba Corp ラテラル型半導体装置
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5416031A (en) * 1992-09-30 1995-05-16 Sony Corporation Method of producing Bi-CMOS transistors
DE19523536A1 (de) * 1994-07-12 1996-01-18 Siemens Ag Verfahren zur Herstellung von MOS-Transistoren und Bipolartransistoren auf einer Halbleiterscheibe
DE69433965D1 (de) * 1994-10-26 2004-09-30 Cons Ric Microelettronica Verfahren zur Herstellung eines lateralen PNP-Hochfrequenztransistors
EP0881688A1 (de) * 1997-05-30 1998-12-02 STMicroelectronics S.r.l. Elektronisches Bauelement vom Typ lateral-bipolar-pnp

Also Published As

Publication number Publication date
JPH10335346A (ja) 1998-12-18
US6146956A (en) 2000-11-14
EP0881689A1 (de) 1998-12-02
EP0881689B1 (de) 2002-08-07
US6657279B1 (en) 2003-12-02

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Legal Events

Date Code Title Description
8332 No legal effect for de