DE69714117T2 - Heteroübergang-PIN-Photodiode - Google Patents
Heteroübergang-PIN-PhotodiodeInfo
- Publication number
- DE69714117T2 DE69714117T2 DE69714117T DE69714117T DE69714117T2 DE 69714117 T2 DE69714117 T2 DE 69714117T2 DE 69714117 T DE69714117 T DE 69714117T DE 69714117 T DE69714117 T DE 69714117T DE 69714117 T2 DE69714117 T2 DE 69714117T2
- Authority
- DE
- Germany
- Prior art keywords
- pin photodiode
- heterojunction pin
- heterojunction
- photodiode
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP08370496A JP3687700B2 (ja) | 1996-04-05 | 1996-04-05 | フォトダイオード |
JP2868297A JPH10223647A (ja) | 1997-02-13 | 1997-02-13 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69714117D1 DE69714117D1 (de) | 2002-08-29 |
DE69714117T2 true DE69714117T2 (de) | 2003-03-06 |
Family
ID=26366820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69714117T Expired - Lifetime DE69714117T2 (de) | 1996-04-05 | 1997-04-04 | Heteroübergang-PIN-Photodiode |
Country Status (3)
Country | Link |
---|---|
US (1) | US5818096A (de) |
EP (1) | EP0800219B1 (de) |
DE (1) | DE69714117T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007006211B3 (de) * | 2007-02-08 | 2008-07-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Heteroübergang-pin-Photodiode und deren Verwendung |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6262465B1 (en) * | 1998-09-25 | 2001-07-17 | Picometrix, Inc. | Highly-doped P-type contact for high-speed, front-side illuminated photodiode |
US6326649B1 (en) | 1999-01-13 | 2001-12-04 | Agere Systems, Inc. | Pin photodiode having a wide bandwidth |
US7473754B1 (en) | 2000-10-17 | 2009-01-06 | Ppg Industries Ohio, Inc. | Optical resin composition |
US6429499B1 (en) | 2000-05-18 | 2002-08-06 | International Business Machines Corporation | Method and apparatus for a monolithic integrated MESFET and p-i-n optical receiver |
US7202102B2 (en) * | 2001-11-27 | 2007-04-10 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
JP4061057B2 (ja) * | 2001-12-04 | 2008-03-12 | Nttエレクトロニクス株式会社 | フォトダイオード |
KR100766174B1 (ko) * | 2002-02-01 | 2007-10-10 | 피코메트릭스 인코포레이티드 | 개선된 광검출기 |
WO2003065418A2 (en) * | 2002-02-01 | 2003-08-07 | Picometrix, Inc. | Planar avalanche photodiode |
US20050029541A1 (en) * | 2002-02-01 | 2005-02-10 | Ko Cheng C. | Charge controlled avalanche photodiode and method of making the same |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
US6831309B2 (en) * | 2002-12-18 | 2004-12-14 | Agilent Technologies, Inc. | Unipolar photodiode having a schottky junction contact |
US6815790B2 (en) * | 2003-01-10 | 2004-11-09 | Rapiscan, Inc. | Position sensing detector for the detection of light within two dimensions |
US6740908B1 (en) | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
US7256470B2 (en) * | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
US7279731B1 (en) * | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
US7709921B2 (en) | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US8120023B2 (en) | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US7656001B2 (en) | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US8519503B2 (en) * | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
US8686529B2 (en) * | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
CN1856860A (zh) * | 2003-05-29 | 2006-11-01 | 应用材料股份有限公司 | 埋置式波导检测器 |
EP1627454A4 (de) * | 2003-05-29 | 2007-04-25 | Applied Materials Inc | Auf verunreinigungen basierende wellenleiterdetektoren |
TWI228320B (en) * | 2003-09-09 | 2005-02-21 | Ind Tech Res Inst | An avalanche photo-detector(APD) with high saturation power, high gain-bandwidth product |
US7205624B2 (en) | 2003-10-07 | 2007-04-17 | Applied Materials, Inc. | Self-aligned implanted waveguide detector |
WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
GB0606540D0 (en) * | 2006-03-31 | 2006-05-10 | Univ London | Photodetector |
US9178092B2 (en) | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US20100053802A1 (en) * | 2008-08-27 | 2010-03-04 | Masaki Yamashita | Low Power Disk-Drive Motor Driver |
WO2009071916A1 (en) * | 2007-12-06 | 2009-06-11 | The University Of Sheffield | Infrared avalanche photodiode structure with low excess noise and its manufacturing method |
TW201001736A (en) * | 2008-06-19 | 2010-01-01 | Univ Nat Central | A high-speed avalanche photodiode |
BRPI0919221A2 (pt) | 2008-09-15 | 2015-12-08 | Osi Optoelectronics Inc | fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
JP2014090138A (ja) * | 2012-10-31 | 2014-05-15 | Ntt Electornics Corp | フォトダイオード |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
EP2808908B1 (de) | 2013-05-31 | 2023-04-19 | Mellanox Technologies, Ltd. | Schneller Fotodetektor |
LT6044B (lt) | 2013-07-22 | 2014-06-25 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Didelės spartos fotodiodas |
US11152410B2 (en) | 2019-12-19 | 2021-10-19 | Globalfoundries Singapore Pte. Ltd. | Image sensor with reduced capacitance transfer gate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608586A (en) * | 1984-05-11 | 1986-08-26 | At&T Bell Laboratories | Back-illuminated photodiode with a wide bandgap cap layer |
JPS62169376A (ja) * | 1986-01-21 | 1987-07-25 | Nec Corp | フオトダイオ−ド |
US5051804A (en) * | 1989-12-01 | 1991-09-24 | The United States Of America As Represented By The United States Department Of Energy | Photodetector having high speed and sensitivity |
JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
JP2601231B2 (ja) * | 1994-12-22 | 1997-04-16 | 日本電気株式会社 | 超格子アバランシェフォトダイオード |
-
1997
- 1997-04-03 US US08/832,297 patent/US5818096A/en not_active Expired - Lifetime
- 1997-04-04 EP EP97105610A patent/EP0800219B1/de not_active Expired - Lifetime
- 1997-04-04 DE DE69714117T patent/DE69714117T2/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007006211B3 (de) * | 2007-02-08 | 2008-07-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Heteroübergang-pin-Photodiode und deren Verwendung |
Also Published As
Publication number | Publication date |
---|---|
US5818096A (en) | 1998-10-06 |
EP0800219B1 (de) | 2002-07-24 |
EP0800219A3 (de) | 1998-07-08 |
DE69714117D1 (de) | 2002-08-29 |
EP0800219A2 (de) | 1997-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |