DE69712883D1 - Zweimodenspeicher mit eingebettem ROM - Google Patents

Zweimodenspeicher mit eingebettem ROM

Info

Publication number
DE69712883D1
DE69712883D1 DE69712883T DE69712883T DE69712883D1 DE 69712883 D1 DE69712883 D1 DE 69712883D1 DE 69712883 T DE69712883 T DE 69712883T DE 69712883 T DE69712883 T DE 69712883T DE 69712883 D1 DE69712883 D1 DE 69712883D1
Authority
DE
Germany
Prior art keywords
dual mode
mode memory
embedded rom
rom
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69712883T
Other languages
English (en)
Other versions
DE69712883T2 (de
Inventor
Fuchia Shone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of DE69712883D1 publication Critical patent/DE69712883D1/de
Application granted granted Critical
Publication of DE69712883T2 publication Critical patent/DE69712883T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE69712883T 1997-09-09 1997-09-23 Zweimodenspeicher mit eingebettem ROM Expired - Lifetime DE69712883T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/926,342 US5822243A (en) 1997-09-09 1997-09-09 Dual mode memory with embedded ROM

Publications (2)

Publication Number Publication Date
DE69712883D1 true DE69712883D1 (de) 2002-07-04
DE69712883T2 DE69712883T2 (de) 2003-01-02

Family

ID=25453082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69712883T Expired - Lifetime DE69712883T2 (de) 1997-09-09 1997-09-23 Zweimodenspeicher mit eingebettem ROM

Country Status (3)

Country Link
US (1) US5822243A (de)
EP (1) EP0902477B1 (de)
DE (1) DE69712883T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6009017A (en) * 1998-03-13 1999-12-28 Macronix International Co., Ltd. Floating gate memory with substrate band-to-band tunneling induced hot electron injection
EP0991118B1 (de) 1998-10-02 2006-01-18 STMicroelectronics S.r.l. Verfahren zur Herstellung eines Mehrpegel ROM Speichers in einem Doppelgate CMOS Prozess und entsprechende ROM Speicherzelle
EP1024527A3 (de) * 1998-12-31 2001-05-23 STMicroelectronics S.r.l. Verfahren zur Herstellung eines mehrwertigen Festwertspeichers (ROM) durch ein Verfahren zur Herstellung eines EEPROM-Speichers
US6576517B1 (en) 1998-12-31 2003-06-10 Stmicroelectronics S.R.L. Method for obtaining a multi-level ROM in an EEPROM process flow
US6060742A (en) * 1999-06-16 2000-05-09 Worldwide Semiconductor Manufacturing Corporation ETOX cell having bipolar electron injection for substrate-hot-electron program
US6801453B2 (en) * 2002-04-02 2004-10-05 Macronix International Co., Ltd. Method and apparatus of a read scheme for non-volatile memory
US6961807B1 (en) 2002-08-27 2005-11-01 Cypress Semiconductor Corporation Device, system and method for an integrated circuit adaptable for use in computing systems of differing memory requirements
KR100506934B1 (ko) * 2003-01-10 2005-08-05 삼성전자주식회사 연마장치 및 이를 사용하는 연마방법
JP3941943B2 (ja) * 2003-03-12 2007-07-11 力旺電子股▲ふん▼有限公司 Ｒｏｍ
KR100555506B1 (ko) 2003-07-11 2006-03-03 삼성전자주식회사 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
US7119393B1 (en) * 2003-07-28 2006-10-10 Actel Corporation Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit
CN100463138C (zh) * 2004-04-26 2009-02-18 旺宏电子股份有限公司 电荷陷入非易失性存储器的电荷平衡操作方法
KR100604877B1 (ko) * 2004-07-03 2006-07-31 삼성전자주식회사 내장 시스템의 메모리 어드레스의 매핑을 제어하는 장치와방법
CN102938409B (zh) * 2012-11-07 2015-09-23 南京大学 基于复合介质栅mosfet的双晶体管光敏探测器及其信号读取办法
US9620953B2 (en) 2013-03-25 2017-04-11 Wen Technology, Inc. Methods providing control for electro-permanent magnetic devices and related electro-permanent magnetic devices and controllers
JP2015176612A (ja) * 2014-03-13 2015-10-05 株式会社東芝 不揮発性半導体記憶装置
US9620216B2 (en) 2015-02-17 2017-04-11 Silicon Storage Technology, Inc. Flash memory device configurable to provide read only memory functionality
US10734149B2 (en) 2016-03-23 2020-08-04 Wen Technology Inc. Electro-permanent magnetic devices including unbalanced switching and permanent magnets and related methods and controllers

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211699A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体集積回路装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4864374A (en) * 1987-11-30 1989-09-05 Texas Instruments Incorporated Two-transistor dram cell with high alpha particle immunity
JPH02133967A (ja) * 1988-11-14 1990-05-23 Sharp Corp 半導体装置
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
JPH04115565A (ja) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp 半導体記憶装置
JP3150747B2 (ja) * 1992-02-24 2001-03-26 株式会社リコー 半導体メモリ装置とその製造方法
JPH05283654A (ja) * 1992-04-03 1993-10-29 Toshiba Corp マスクｒｏｍとその製造方法
JPH05304277A (ja) * 1992-04-28 1993-11-16 Rohm Co Ltd 半導体装置の製法
US5379253A (en) * 1992-06-01 1995-01-03 National Semiconductor Corporation High density EEPROM cell array with novel programming scheme and method of manufacture
DE4422791C2 (de) * 1993-06-29 2001-11-29 Toshiba Kawasaki Kk Halbleitervorrichtungen mit einem eine Inversionsschicht in einem Oberflächenbereich eines Halbleitersubstrats induzierenden leitenden Film
US5358887A (en) * 1993-11-26 1994-10-25 United Microelectronics Corporation Ulsi mask ROM structure and method of manufacture
US5574685A (en) * 1994-09-01 1996-11-12 Advanced Micro Devices, Inc. Self-aligned buried channel/junction stacked gate flash memory cell
US5585297A (en) * 1995-05-25 1996-12-17 United Microelectronics Corporation Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby
US5576573A (en) * 1995-05-31 1996-11-19 United Microelectronics Corporation Stacked CVD oxide architecture multi-state memory cell for mask read-only memories
US5504030A (en) * 1995-07-21 1996-04-02 United Microelectronics Corporation Process for fabricating high-density mask ROM devices
US5545580A (en) * 1995-09-19 1996-08-13 United Microelectronics Corporation Multi-state read-only memory using multiple polysilicon selective depositions

Also Published As

Publication number Publication date
EP0902477B1 (de) 2002-05-29
US5822243A (en) 1998-10-13
EP0902477A1 (de) 1999-03-17
DE69712883T2 (de) 2003-01-02

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