DE69712563T2 - Seitlich emittierende Leuchtdiode und Verfahren zu deren Herstellung - Google Patents

Seitlich emittierende Leuchtdiode und Verfahren zu deren Herstellung

Info

Publication number
DE69712563T2
DE69712563T2 DE1997612563 DE69712563T DE69712563T2 DE 69712563 T2 DE69712563 T2 DE 69712563T2 DE 1997612563 DE1997612563 DE 1997612563 DE 69712563 T DE69712563 T DE 69712563T DE 69712563 T2 DE69712563 T2 DE 69712563T2
Authority
DE
Germany
Prior art keywords
production
emitting diode
lateral emitting
lateral
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1997612563
Other languages
English (en)
Other versions
DE69712563D1 (de
Inventor
Yasumasa Kashima
Tsutomu Munakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69712563D1 publication Critical patent/DE69712563D1/de
Application granted granted Critical
Publication of DE69712563T2 publication Critical patent/DE69712563T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE1997612563 1996-02-27 1997-02-27 Seitlich emittierende Leuchtdiode und Verfahren zu deren Herstellung Expired - Fee Related DE69712563T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3934896A JPH09232625A (ja) 1996-02-27 1996-02-27 端面発光型光半導体素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69712563D1 DE69712563D1 (de) 2002-06-20
DE69712563T2 true DE69712563T2 (de) 2002-12-19

Family

ID=12550583

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997612563 Expired - Fee Related DE69712563T2 (de) 1996-02-27 1997-02-27 Seitlich emittierende Leuchtdiode und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (2) US5889294A (de)
EP (1) EP0793280B1 (de)
JP (1) JPH09232625A (de)
KR (1) KR970063768A (de)
DE (1) DE69712563T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967737B2 (ja) * 1996-12-05 1999-10-25 日本電気株式会社 光半導体装置とその製造方法
JPH11121860A (ja) * 1997-10-20 1999-04-30 Oki Electric Ind Co Ltd 化合物半導体発光素子およびその形成方法
US6528337B1 (en) * 1999-04-08 2003-03-04 The Furukawa Electric Co., Ltd. Process of producing semiconductor layer structure
US6944197B2 (en) * 2001-06-26 2005-09-13 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
US6807214B2 (en) * 2002-08-01 2004-10-19 Agilent Technologies, Inc. Integrated laser and electro-absorption modulator with improved extinction
CN100367586C (zh) * 2003-05-23 2008-02-06 武汉光迅科技股份有限公司 铝镓铟砷多量子阱超辐射发光二极管
CN100384038C (zh) * 2004-09-16 2008-04-23 中国科学院半导体研究所 选择区域外延生长叠层电吸收调制激光器结构的制作方法
US20060222264A1 (en) * 2005-03-31 2006-10-05 Siemens Ag Method for vertically orienting a face shown in a picture
CN1296760C (zh) * 2005-05-20 2007-01-24 深圳市中电淼浩固体光源有限公司 一种使用匀光器的led光源
KR100884353B1 (ko) * 2007-09-18 2009-02-18 한국전자통신연구원 고휘도 다이오드 및 그 제조 방법
CN101843170B (zh) * 2007-11-01 2014-01-22 Nxp股份有限公司 Led封装和用于制造这种led封装的方法
GB2580956B (en) * 2019-01-31 2023-01-25 Exalos Ag Amplified Spontaneous Emission Semiconductor Source

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277174A (ja) * 1988-06-10 1990-03-16 Toshiba Corp 端面放射型発光ダイオード
DE69331979T2 (de) * 1992-02-28 2003-01-23 Hitachi Ltd Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
JPH0669538A (ja) * 1992-08-21 1994-03-11 Oki Electric Ind Co Ltd 端面放射型発光ダイオード
JP2937751B2 (ja) * 1994-04-28 1999-08-23 日本電気株式会社 光半導体装置の製造方法

Also Published As

Publication number Publication date
DE69712563D1 (de) 2002-06-20
JPH09232625A (ja) 1997-09-05
US5889294A (en) 1999-03-30
KR970063768A (ko) 1997-09-12
EP0793280A1 (de) 1997-09-03
EP0793280B1 (de) 2002-05-15
US6013539A (en) 2000-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee