DE69703094T2 - Thermisches verarbeitungsverfahren von positiver photoresist-zusammensetzung - Google Patents
Thermisches verarbeitungsverfahren von positiver photoresist-zusammensetzungInfo
- Publication number
- DE69703094T2 DE69703094T2 DE69703094T DE69703094T DE69703094T2 DE 69703094 T2 DE69703094 T2 DE 69703094T2 DE 69703094 T DE69703094 T DE 69703094T DE 69703094 T DE69703094 T DE 69703094T DE 69703094 T2 DE69703094 T2 DE 69703094T2
- Authority
- DE
- Germany
- Prior art keywords
- processing process
- photoresist composition
- thermal processing
- positive photoresist
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1301096P | 1996-03-07 | 1996-03-07 | |
PCT/US1997/003075 WO1997033206A1 (en) | 1996-03-07 | 1997-02-27 | Thermal treatment process of positive photoresist composition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69703094D1 DE69703094D1 (de) | 2000-10-19 |
DE69703094T2 true DE69703094T2 (de) | 2001-05-03 |
Family
ID=21757854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69703094T Expired - Fee Related DE69703094T2 (de) | 1996-03-07 | 1997-02-27 | Thermisches verarbeitungsverfahren von positiver photoresist-zusammensetzung |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0885410B1 (de) |
JP (1) | JP2000506285A (de) |
KR (1) | KR100454011B1 (de) |
CN (1) | CN1124521C (de) |
DE (1) | DE69703094T2 (de) |
TW (1) | TW452675B (de) |
WO (1) | WO1997033206A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4654544B2 (ja) | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
CN102023478A (zh) * | 2009-09-16 | 2011-04-20 | 东莞市伟峰印刷有限公司 | 一种立体工件的蚀刻方法 |
CN103235490A (zh) * | 2013-01-30 | 2013-08-07 | 常州同泰光电有限公司 | 一种改善光阻图案的方法 |
WO2019240891A1 (en) * | 2018-06-15 | 2019-12-19 | Mattson Technology, Inc. | Methods and apparatus for post exposure bake processing of a workpiece |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3045149A1 (de) * | 1980-11-29 | 1982-07-01 | Hoechst Ag, 6000 Frankfurt | Verfahren zur herstellung von reliefkopien |
JPS5890636A (ja) * | 1981-11-24 | 1983-05-30 | Fuji Photo Film Co Ltd | 光重合性組成物を用いた感光材料による画像形成方法および現像ユニツト |
US4689289A (en) * | 1986-04-30 | 1987-08-25 | General Electric Company | Block polymer compositions |
DE3750275T3 (de) * | 1986-06-13 | 1998-10-01 | Microsi Inc | Lackzusammensetzung und -anwendung. |
EP0361907A3 (de) * | 1988-09-29 | 1991-05-02 | Hoechst Celanese Corporation | Photolack-Zusammensetzung mit Bildumkehr für tiefes UV |
EP0379120A3 (de) * | 1989-01-23 | 1990-11-07 | Siemens Aktiengesellschaft | Verfahren zur Strukturierung einer Photolackschicht durch optische Lithographie bei der Herstellung integrierter Schaltungen in einem Substrat |
EP0379924A3 (de) * | 1989-01-23 | 1990-11-07 | Siemens Aktiengesellschaft | Vefahren zur Verringerung reflektionsbedingter Srukturgrössenschwankungen in einer Deckschicht bei der in der Herstellung integrierten Schaltungen in einem Substrat verwendeten optischen Lithographie |
CA2020378A1 (en) * | 1989-07-28 | 1991-01-29 | Sangya Jain | Maleimide containing, negative working deep uv photoresist |
DE4033294A1 (de) * | 1990-10-19 | 1992-04-23 | Siemens Ag | Verfahren zur fotolithographischen herstellung von strukturen auf einem traeger |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
-
1997
- 1997-02-27 CN CN97192770A patent/CN1124521C/zh not_active Expired - Fee Related
- 1997-02-27 EP EP97914803A patent/EP0885410B1/de not_active Expired - Lifetime
- 1997-02-27 JP JP9531830A patent/JP2000506285A/ja not_active Withdrawn
- 1997-02-27 DE DE69703094T patent/DE69703094T2/de not_active Expired - Fee Related
- 1997-02-27 KR KR10-1998-0706952A patent/KR100454011B1/ko not_active IP Right Cessation
- 1997-02-27 WO PCT/US1997/003075 patent/WO1997033206A1/en active IP Right Grant
- 1997-03-04 TW TW086102592A patent/TW452675B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1124521C (zh) | 2003-10-15 |
TW452675B (en) | 2001-09-01 |
WO1997033206A1 (en) | 1997-09-12 |
KR100454011B1 (ko) | 2005-04-28 |
KR19990087519A (ko) | 1999-12-27 |
CN1225727A (zh) | 1999-08-11 |
JP2000506285A (ja) | 2000-05-23 |
EP0885410A1 (de) | 1998-12-23 |
EP0885410B1 (de) | 2000-09-13 |
DE69703094D1 (de) | 2000-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |