DE69618917D1 - Sensor und Herstellunsgverfahren dazu - Google Patents
Sensor und Herstellunsgverfahren dazuInfo
- Publication number
- DE69618917D1 DE69618917D1 DE69618917T DE69618917T DE69618917D1 DE 69618917 D1 DE69618917 D1 DE 69618917D1 DE 69618917 T DE69618917 T DE 69618917T DE 69618917 T DE69618917 T DE 69618917T DE 69618917 D1 DE69618917 D1 DE 69618917D1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- manufacturing process
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/575,944 US5883420A (en) | 1995-12-20 | 1995-12-20 | Sensor device having a pathway and a sealed cavity |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69618917D1 true DE69618917D1 (de) | 2002-03-14 |
DE69618917T2 DE69618917T2 (de) | 2002-06-20 |
Family
ID=24302333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69618917T Expired - Fee Related DE69618917T2 (de) | 1995-12-20 | 1996-12-09 | Sensor und Herstellunsgverfahren dazu |
Country Status (4)
Country | Link |
---|---|
US (1) | US5883420A (de) |
EP (1) | EP0780675B1 (de) |
JP (1) | JPH09186347A (de) |
DE (1) | DE69618917T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19710324A1 (de) * | 1997-03-13 | 1998-09-17 | Bosch Gmbh Robert | Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelemente |
EP1043770B1 (de) * | 1999-04-09 | 2006-03-01 | STMicroelectronics S.r.l. | Herstellung von vergrabenen Hohlräumen in einer einkristallinen Halbleiterscheibe und Halbleiterscheibe |
DE10250358B4 (de) * | 2002-10-29 | 2017-02-09 | Infineon Technologies Ag | Sensormodul zur Messung mechanischer Kräfte |
WO2006110662A2 (en) | 2005-04-08 | 2006-10-19 | Analatom, Inc. | Compact pressure-sensing device |
JP5069682B2 (ja) * | 2005-07-22 | 2012-11-07 | エスティーマイクロエレクトロニクス エス.アール.エル. | 二重測定スケールおよび高フルスケール値を有する集積化圧力センサ |
ITTO20070190A1 (it) * | 2007-03-14 | 2008-09-15 | St Microelectronics Srl | Procedimento di fabbricazione di una membrana di materiale semiconduttore integrata in, ed isolata elettricamente da, un substrato |
JP5687202B2 (ja) * | 2009-11-04 | 2015-03-18 | ローム株式会社 | 圧力センサおよび圧力センサの製造方法 |
FR2952628A1 (fr) * | 2009-11-13 | 2011-05-20 | Commissariat Energie Atomique | Procede de fabrication d'au moins une micropompe a membrane deformable et micropompe a membrane deformable |
JP2013138411A (ja) | 2011-11-28 | 2013-07-11 | Canon Inc | 静電容量型トランスデューサの製造方法 |
US9352955B2 (en) * | 2014-03-27 | 2016-05-31 | Maxim Integrated Products, Inc. | MEMS pressure sensor with improved insensitivity to thermo-mechanical stress |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4853669A (en) * | 1985-04-26 | 1989-08-01 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
EP0219543B1 (de) * | 1985-04-26 | 1993-12-15 | Wisconsin Alumni Research Foundation | Halbleiterdruckwandler mit versiegeltem hohlraum und verfahren dazu |
US4996082A (en) * | 1985-04-26 | 1991-02-26 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
GB2198611B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of forming a sealed diaphragm on a substrate |
JPH0797643B2 (ja) * | 1987-07-08 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
US5177579A (en) * | 1989-04-07 | 1993-01-05 | Ic Sensors, Inc. | Semiconductor transducer or actuator utilizing corrugated supports |
US5283459A (en) * | 1989-11-15 | 1994-02-01 | Kabushiki Kaisha Toshiba | Semiconductor sensor including an aperture having a funnel shaped section intersecting a second section |
CN1018844B (zh) * | 1990-06-02 | 1992-10-28 | 中国科学院兰州化学物理研究所 | 防锈干膜润滑剂 |
US5207866A (en) * | 1991-01-17 | 1993-05-04 | Motorola, Inc. | Anisotropic single crystal silicon etching solution and method |
JP2729005B2 (ja) * | 1992-04-01 | 1998-03-18 | 三菱電機株式会社 | 半導体圧力センサ及びその製造方法 |
DE4314888C1 (de) * | 1993-05-05 | 1994-08-18 | Ignaz Eisele | Verfahren zum Abscheiden einer ganzflächigen Schicht durch eine Maske und optionalem Verschließen dieser Maske |
US5589703A (en) * | 1995-04-28 | 1996-12-31 | Motorola, Inc. | Edge die bond semiconductor package |
US5736430A (en) * | 1995-06-07 | 1998-04-07 | Ssi Technologies, Inc. | Transducer having a silicon diaphragm and method for forming same |
DE59600621D1 (de) * | 1995-08-09 | 1998-11-05 | Siemens Ag | Mikromechanisches Bauelement mit perforierter, spannungsfreier Membran |
-
1995
- 1995-12-20 US US08/575,944 patent/US5883420A/en not_active Expired - Fee Related
-
1996
- 1996-12-09 DE DE69618917T patent/DE69618917T2/de not_active Expired - Fee Related
- 1996-12-09 EP EP96119688A patent/EP0780675B1/de not_active Expired - Lifetime
- 1996-12-13 JP JP8352751A patent/JPH09186347A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0780675A1 (de) | 1997-06-25 |
JPH09186347A (ja) | 1997-07-15 |
EP0780675B1 (de) | 2002-01-30 |
US5883420A (en) | 1999-03-16 |
DE69618917T2 (de) | 2002-06-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |