DE69615519T2 - Kristallisation von amorphen Siliziumschichten auf nichtleitenden Substraten durch Festphasenepitaxie - Google Patents
Kristallisation von amorphen Siliziumschichten auf nichtleitenden Substraten durch FestphasenepitaxieInfo
- Publication number
- DE69615519T2 DE69615519T2 DE69615519T DE69615519T DE69615519T2 DE 69615519 T2 DE69615519 T2 DE 69615519T2 DE 69615519 T DE69615519 T DE 69615519T DE 69615519 T DE69615519 T DE 69615519T DE 69615519 T2 DE69615519 T2 DE 69615519T2
- Authority
- DE
- Germany
- Prior art keywords
- crystallization
- solid phase
- amorphous silicon
- phase epitaxy
- silicon layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/578,810 US5707744A (en) | 1995-12-26 | 1995-12-26 | Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
US08/578,809 US5893949A (en) | 1995-12-26 | 1995-12-26 | Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69615519D1 DE69615519D1 (de) | 2001-10-31 |
DE69615519T2 true DE69615519T2 (de) | 2002-04-25 |
Family
ID=27077585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69615519T Expired - Lifetime DE69615519T2 (de) | 1995-12-26 | 1996-12-19 | Kristallisation von amorphen Siliziumschichten auf nichtleitenden Substraten durch Festphasenepitaxie |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0782178B1 (de) |
JP (1) | JP4185575B2 (de) |
DE (1) | DE69615519T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7629209B2 (en) | 2005-10-17 | 2009-12-08 | Chunghwa Picture Tubes, Ltd. | Methods for fabricating polysilicon film and thin film transistors |
EP1974076A2 (de) | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Verfahren und vorrichtungen zur herstellung von geometrischem multikristallin-formsilicium und geometrische multikristallin-formsiliciumkörper für die fotovoltaik |
CN101755075A (zh) | 2007-07-20 | 2010-06-23 | Bp北美公司 | 从籽晶制造浇铸硅的方法和装置 |
WO2009015167A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
WO2009015168A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing geometric multi-crystalline cast materials |
JP7190875B2 (ja) * | 2018-11-16 | 2022-12-16 | 東京エレクトロン株式会社 | ポリシリコン膜の形成方法及び成膜装置 |
JP7391064B2 (ja) * | 2021-03-22 | 2023-12-04 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理システム、およびプログラム |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
-
1996
- 1996-11-25 JP JP31316096A patent/JP4185575B2/ja not_active Expired - Fee Related
- 1996-12-19 DE DE69615519T patent/DE69615519T2/de not_active Expired - Lifetime
- 1996-12-19 EP EP96309287A patent/EP0782178B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0782178B1 (de) | 2001-09-26 |
JPH09186086A (ja) | 1997-07-15 |
JP4185575B2 (ja) | 2008-11-26 |
EP0782178A1 (de) | 1997-07-02 |
DE69615519D1 (de) | 2001-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |