DE69614674D1 - Verbesserte, zerstörungsfrei lesbare ferroelektrische speicherzelle - Google Patents

Verbesserte, zerstörungsfrei lesbare ferroelektrische speicherzelle

Info

Publication number
DE69614674D1
DE69614674D1 DE69614674T DE69614674T DE69614674D1 DE 69614674 D1 DE69614674 D1 DE 69614674D1 DE 69614674 T DE69614674 T DE 69614674T DE 69614674 T DE69614674 T DE 69614674T DE 69614674 D1 DE69614674 D1 DE 69614674D1
Authority
DE
Germany
Prior art keywords
destructible
improved
storage cell
ferroelectric storage
readable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69614674T
Other languages
English (en)
Inventor
Tate Evans
L Warren
A Tuttle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiant Technologies Inc
Original Assignee
Radiant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiant Technologies Inc filed Critical Radiant Technologies Inc
Application granted granted Critical
Publication of DE69614674D1 publication Critical patent/DE69614674D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69614674T 1995-03-17 1996-03-09 Verbesserte, zerstörungsfrei lesbare ferroelektrische speicherzelle Expired - Lifetime DE69614674D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/406,386 US5578846A (en) 1995-03-17 1995-03-17 Static ferroelectric memory transistor having improved data retention
PCT/US1996/003128 WO1996029742A1 (en) 1995-03-17 1996-03-09 Improved non-destructively read ferroelectric memory cell

Publications (1)

Publication Number Publication Date
DE69614674D1 true DE69614674D1 (de) 2001-09-27

Family

ID=23607770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69614674T Expired - Lifetime DE69614674D1 (de) 1995-03-17 1996-03-09 Verbesserte, zerstörungsfrei lesbare ferroelektrische speicherzelle

Country Status (7)

Country Link
US (2) US5578846A (de)
EP (1) EP0815596B1 (de)
JP (1) JPH11502373A (de)
KR (1) KR19980702849A (de)
AU (1) AU5186096A (de)
DE (1) DE69614674D1 (de)
WO (1) WO1996029742A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention
KR0161785B1 (ko) * 1995-04-29 1998-12-01 주승기 강유전체 박막소자의 제조방법
US6159829A (en) * 1996-09-16 2000-12-12 Warren; William L. Memory device using movement of protons
US5830575A (en) * 1996-09-16 1998-11-03 Sandia National Laboratories Memory device using movement of protons
KR100261221B1 (ko) * 1997-12-31 2000-07-01 윤종용 단일 트랜지스터 셀 및 이를 제조하는 방법 및 이 소자로 구성된 메모리 회로와 이를 구동하는 방법
SE513809C2 (sv) * 1999-04-13 2000-11-06 Ericsson Telefon Ab L M Avstämbara mikrovågsanordningar
JP2001358310A (ja) * 2000-06-12 2001-12-26 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002009255A (ja) * 2000-06-19 2002-01-11 Matsushita Electric Ind Co Ltd 不揮発半導体記憶装置
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
DE10122279A1 (de) * 2001-05-08 2002-12-12 Heimann Systems Gmbh & Co Röntgenanlage
US7066088B2 (en) * 2002-07-31 2006-06-27 Day International, Inc. Variable cut-off offset press system and method of operation
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
JP5311375B2 (ja) * 2008-04-21 2013-10-09 富士通株式会社 スイッチング素子
JP5352904B2 (ja) * 2009-12-10 2013-11-27 富士通株式会社 光変調素子、光変調方法、および光変調装置
WO2013017131A2 (de) * 2011-07-12 2013-02-07 Helmholtz-Zentrum Dresden - Rossendorf E.V. Integrierte nichtflüchtige speicherelemente, aufbau und verwendung
EP2717343B1 (de) * 2012-10-08 2014-09-24 Christian-Albrechts-Universität zu Kiel Magnetoelektrischer Sensor und Verfahren zu seiner Herstellung
KR20210111625A (ko) 2020-03-03 2021-09-13 삼성전자주식회사 강유전 박막 구조체 및 이를 포함하는 전자 소자

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97896C (de) * 1955-02-18
JPS5846680A (ja) * 1981-09-14 1983-03-18 Fujitsu Ltd 記憶素子
US4946710A (en) * 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
US5198994A (en) * 1988-08-31 1993-03-30 Kabushiki Kaisha Toshiba Ferroelectric memory device
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5303182A (en) * 1991-11-08 1994-04-12 Rohm Co., Ltd. Nonvolatile semiconductor memory utilizing a ferroelectric film
JP3264506B2 (ja) * 1991-11-18 2002-03-11 ローム株式会社 強誘電体不揮発性記憶装置
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5372859A (en) * 1992-10-20 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
JPH06151872A (ja) * 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
EP0617439B1 (de) * 1993-03-25 2003-01-08 Matsushita Electric Industrial Co., Ltd. Dünnschichtkondensator und Herstellungsverfahren
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention

Also Published As

Publication number Publication date
EP0815596A4 (de) 1998-06-03
EP0815596B1 (de) 2001-08-22
US6225654B1 (en) 2001-05-01
US5578846A (en) 1996-11-26
JPH11502373A (ja) 1999-02-23
AU5186096A (en) 1996-10-08
EP0815596A1 (de) 1998-01-07
KR19980702849A (ko) 1998-08-05
WO1996029742A1 (en) 1996-09-26

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Legal Events

Date Code Title Description
8332 No legal effect for de