DE69611217T2 - Monolithischer Ganzsiliziumbewegungsfühler mit integrierter Umsetzschaltung - Google Patents

Monolithischer Ganzsiliziumbewegungsfühler mit integrierter Umsetzschaltung

Info

Publication number
DE69611217T2
DE69611217T2 DE69611217T DE69611217T DE69611217T2 DE 69611217 T2 DE69611217 T2 DE 69611217T2 DE 69611217 T DE69611217 T DE 69611217T DE 69611217 T DE69611217 T DE 69611217T DE 69611217 T2 DE69611217 T2 DE 69611217T2
Authority
DE
Germany
Prior art keywords
monolithic
conversion circuit
motion sensor
integrated conversion
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69611217T
Other languages
English (en)
Other versions
DE69611217D1 (de
Inventor
Peter James Schubert
Steven Edward Staller
Dan Wesley Chilcott
Mark Billings Kearney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delphi Technologies Inc
Original Assignee
Delphi Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delphi Technologies Inc filed Critical Delphi Technologies Inc
Publication of DE69611217D1 publication Critical patent/DE69611217D1/de
Application granted granted Critical
Publication of DE69611217T2 publication Critical patent/DE69611217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE69611217T 1995-11-03 1996-10-07 Monolithischer Ganzsiliziumbewegungsfühler mit integrierter Umsetzschaltung Expired - Lifetime DE69611217T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/552,401 US5721162A (en) 1995-11-03 1995-11-03 All-silicon monolithic motion sensor with integrated conditioning circuit

Publications (2)

Publication Number Publication Date
DE69611217D1 DE69611217D1 (de) 2001-01-18
DE69611217T2 true DE69611217T2 (de) 2001-04-05

Family

ID=24205168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611217T Expired - Lifetime DE69611217T2 (de) 1995-11-03 1996-10-07 Monolithischer Ganzsiliziumbewegungsfühler mit integrierter Umsetzschaltung

Country Status (3)

Country Link
US (1) US5721162A (de)
EP (1) EP0772045B1 (de)
DE (1) DE69611217T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351761B4 (de) * 2002-11-07 2012-08-09 Denso Corporation Sensor für eine dynamische Grösse
DE102012013096A1 (de) * 2012-06-30 2014-01-02 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von komplexen mikroelektromechanischen Systemen

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992233A (en) * 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
CA2233127C (en) * 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
EP0974817A4 (de) * 1997-04-03 2006-09-13 Yamatake Corp Schaltungsplatine,detektor sowie verfahren zu ihrer herstellung
KR19990039351A (ko) * 1997-11-12 1999-06-05 윤종용 고감도 회로 집적형 마이크로자이로스코프 및 그 제조방법
US6093583A (en) * 1998-06-01 2000-07-25 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US6074891A (en) * 1998-06-16 2000-06-13 Delphi Technologies, Inc. Process for verifying a hermetic seal and semiconductor device therefor
AU5215099A (en) * 1998-07-07 2000-01-24 Goodyear Tire And Rubber Company, The Method of fabricating silicon capacitive sensor
GB9819821D0 (en) 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
US6002507A (en) 1998-12-01 1999-12-14 Xerox Corpoation Method and apparatus for an integrated laser beam scanner
USRE38437E1 (en) 1998-12-01 2004-02-24 Xerox Corporation Method and apparatus for an integrated laser beam scanner using a carrier substrate
US6225692B1 (en) 1999-06-03 2001-05-01 Cts Corporation Flip chip package for micromachined semiconductors
US6770503B1 (en) * 1999-10-21 2004-08-03 The Charles Stark Draper Laboratory, Inc. Integrated packaging of micromechanical sensors and associated control circuits
KR100413789B1 (ko) * 1999-11-01 2003-12-31 삼성전자주식회사 고진공 패키징 마이크로자이로스코프 및 그 제조방법
US6440766B1 (en) * 2000-02-16 2002-08-27 Analog Devices Imi, Inc. Microfabrication using germanium-based release masks
US7307775B2 (en) * 2000-12-07 2007-12-11 Texas Instruments Incorporated Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US20040069067A1 (en) * 2001-02-23 2004-04-15 Guiseppe Mancinone Fluorescence measurement apparatus and method
US6448103B1 (en) * 2001-05-30 2002-09-10 Stmicroelectronics, Inc. Method for making an accurate miniature semiconductor resonator
US6498086B1 (en) * 2001-07-26 2002-12-24 Intel Corporation Use of membrane properties to reduce residual stress in an interlayer region
DE10153319B4 (de) * 2001-10-29 2011-02-17 austriamicrosystems AG, Schloss Premstätten Mikrosensor
US6808955B2 (en) * 2001-11-02 2004-10-26 Intel Corporation Method of fabricating an integrated circuit that seals a MEMS device within a cavity
FR2833106B1 (fr) 2001-12-03 2005-02-25 St Microelectronics Sa Circuit integre comportant un composant auxiliaire, par exemple un composant passif ou un microsysteme electromecanique, dispose au-dessus d'une puce electronique, et procede de fabrication correspondant
WO2003076951A2 (en) * 2002-03-14 2003-09-18 Memlink Ltd A microelectromechanical device having an analog system for positioning sensing
US6723579B2 (en) * 2002-07-12 2004-04-20 Analog Devices, Inc. Semiconductor wafer comprising micro-machined components and a method for fabricating the semiconductor wafer
US7203394B2 (en) * 2003-07-15 2007-04-10 Rosemount Aerospace Inc. Micro mirror arrays and microstructures with solderable connection sites
US7026645B2 (en) * 2003-10-15 2006-04-11 Delphi Technologies, Inc. Leak detection method and micro-machined device assembly
US7056757B2 (en) * 2003-11-25 2006-06-06 Georgia Tech Research Corporation Methods of forming oxide masks with submicron openings and microstructures formed thereby
US7368312B1 (en) * 2004-10-15 2008-05-06 Morgan Research Corporation MEMS sensor suite on a chip
JP2008135690A (ja) * 2006-10-30 2008-06-12 Denso Corp 半導体力学量センサおよびその製造方法
US8468887B2 (en) * 2008-04-14 2013-06-25 Freescale Semiconductor, Inc. Resonant accelerometer with low sensitivity to package stress
US20120028425A1 (en) * 2010-08-02 2012-02-02 Hamilton Lu Methods for fabricating trench metal oxide semiconductor field effect transistors
ITTO20120542A1 (it) 2012-06-20 2013-12-21 St Microelectronics Srl Dispositivo microelettromeccanico con instradamento dei segnali attraverso un cappuccio protettivo e metodo per controllare un dispositivo microelettromeccanico

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1330265C (en) * 1988-09-23 1994-06-21 Craig W. White Self-calibrating accelerometer
JPH0623780B2 (ja) * 1989-09-21 1994-03-30 日本電装株式会社 半導体加速度センサの製造方法
JP2549564B2 (ja) * 1989-10-20 1996-10-30 山武ハネウエル株式会社 半導体素子の製造方法
EP0606220B1 (de) * 1991-06-12 1997-03-26 Harris Corporation Verfahren zur herstellung eines halbleiter-beschleunigungsmessers
US5209122A (en) * 1991-11-20 1993-05-11 Delco Electronics Corporation Pressurer sensor and method for assembly of same
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
EP0623824B1 (de) * 1993-05-05 1996-11-06 LITEF GmbH Mikromechanische Beschleunigungsmessvorrichtung und Verfahren zu deren Herstellung
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US5369057A (en) * 1993-12-21 1994-11-29 Delco Electronics Corporation Method of making and sealing a semiconductor device having an air path therethrough
US5413955A (en) * 1993-12-21 1995-05-09 Delco Electronics Corporation Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications
US5660680A (en) * 1994-03-07 1997-08-26 The Regents Of The University Of California Method for fabrication of high vertical aspect ratio thin film structures
JPH08145782A (ja) * 1994-11-23 1996-06-07 Tokyo Gas Co Ltd 予負荷線形ビーム振動センサおよびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351761B4 (de) * 2002-11-07 2012-08-09 Denso Corporation Sensor für eine dynamische Grösse
DE102012013096A1 (de) * 2012-06-30 2014-01-02 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von komplexen mikroelektromechanischen Systemen

Also Published As

Publication number Publication date
DE69611217D1 (de) 2001-01-18
EP0772045B1 (de) 2000-12-13
EP0772045A1 (de) 1997-05-07
US5721162A (en) 1998-02-24

Similar Documents

Publication Publication Date Title
DE69611217T2 (de) Monolithischer Ganzsiliziumbewegungsfühler mit integrierter Umsetzschaltung
DE69631356D1 (de) Halbleiter-Bildaufnehmer mit gemeinsamer Ausgangsleistung
DE69608521T2 (de) Monolitischer Fingerabdrucksensor
DE59609727D1 (de) Monolithisch integrierte Sensorschaltung
FI953888A (fi) Anturi
DE69638170D1 (de) Berührungslose spannungssondengerät
DE59709592D1 (de) Opto-elektronischer Sensor
DE59608120D1 (de) Positionssensor
DE69619850D1 (de) Sensoranordnung
DE69631092D1 (de) Fühler mit Ausgangssignalkorrektur
DE59811747D1 (de) Monolithischer kraftsensor
DE59510649D1 (de) Aktiver bewegungssensor
DE69405746T2 (de) Energieaufnehmer
DE69631509D1 (de) Infrarotsensor
DE69621804T2 (de) Monolithischer linearer optokoppler
DE59809683D1 (de) Opto-elektronischer Sensor
DE69406169T2 (de) Mechanischer Sensor
DE69633363D1 (de) Sensorelement
DE69620655T2 (de) Sensorelement
DE29503531U1 (de) Bewegungsmelder mit Infrarotsensor
DE59812575D1 (de) Opto-elektronischer Sensor
BR9600122A (pt) Anel sensor
DE59600923D1 (de) Sensoranordnung
BR9300842A (pt) Estrutura de montagem de sensor
DE29603331U1 (de) Bewegungsumsetzer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition