DE69610652T2 - Verfahren zur Entfernung von Oberflächenkontamination - Google Patents

Verfahren zur Entfernung von Oberflächenkontamination

Info

Publication number
DE69610652T2
DE69610652T2 DE69610652T DE69610652T DE69610652T2 DE 69610652 T2 DE69610652 T2 DE 69610652T2 DE 69610652 T DE69610652 T DE 69610652T DE 69610652 T DE69610652 T DE 69610652T DE 69610652 T2 DE69610652 T2 DE 69610652T2
Authority
DE
Germany
Prior art keywords
dense phase
gas
substrate
cleaning
dense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69610652T
Other languages
German (de)
English (en)
Other versions
DE69610652D1 (de
Inventor
Monte Allan Douglas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69610652D1 publication Critical patent/DE69610652D1/de
Publication of DE69610652T2 publication Critical patent/DE69610652T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P70/15—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69610652T 1995-01-26 1996-01-17 Verfahren zur Entfernung von Oberflächenkontamination Expired - Lifetime DE69610652T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37843895A 1995-01-26 1995-01-26

Publications (2)

Publication Number Publication Date
DE69610652D1 DE69610652D1 (de) 2000-11-23
DE69610652T2 true DE69610652T2 (de) 2001-05-10

Family

ID=23493142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610652T Expired - Lifetime DE69610652T2 (de) 1995-01-26 1996-01-17 Verfahren zur Entfernung von Oberflächenkontamination

Country Status (3)

Country Link
EP (1) EP0726099B1 (OSRAM)
JP (1) JPH08252549A (OSRAM)
DE (1) DE69610652T2 (OSRAM)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
JP4621400B2 (ja) 1999-11-02 2011-01-26 東京エレクトロン株式会社 半導体基板処理装置
WO2001082368A2 (en) 2000-04-25 2001-11-01 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP4724353B2 (ja) 2000-07-26 2011-07-13 東京エレクトロン株式会社 半導体基板のための高圧処理チャンバー
US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US6905555B2 (en) * 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
JP2002324778A (ja) * 2001-04-25 2002-11-08 Sony Corp 表面処理方法
US6782900B2 (en) 2001-09-13 2004-08-31 Micell Technologies, Inc. Methods and apparatus for cleaning and/or treating a substrate using CO2
JP3883929B2 (ja) 2001-09-25 2007-02-21 大日本スクリーン製造株式会社 薄膜形成装置および薄膜形成方法
CA2472478A1 (en) * 2002-01-07 2003-07-17 John Frederic Billingham Method for cleaning an article
US6928746B2 (en) 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7270941B2 (en) 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7282099B2 (en) 2002-09-24 2007-10-16 Air Products And Chemicals, Inc. Dense phase processing fluids for microelectronic component manufacture
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
JP2004363404A (ja) * 2003-06-05 2004-12-24 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
US7190512B2 (en) 2004-04-29 2007-03-13 Mitsubishi Heavy Industries, Ltd. Optical properties restoration apparatus, the restoration method, and an optical system used in the apparatus
DE102004021336B4 (de) * 2004-04-30 2008-11-27 Mitsubishi Heavy Industries, Ltd. Vorrichtung und Verfahren zur Verbesserung optischer Eigenschaften und in der Vorrichtung verwendetes optisches System
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
FR2929138A1 (fr) * 2008-09-24 2009-10-02 Air Liquide Procede de nettoyage d'un support notamment d'un dispositif de type semi-conducteur.
CN106733836B (zh) * 2016-12-20 2023-05-23 重庆科本科技股份有限公司 一种清洗工艺及清洗系统
CN113731937B (zh) * 2021-09-10 2023-04-14 山东新华医疗器械股份有限公司 真空超声波清洗机压力控制优化方法
CN117782878B (zh) * 2024-02-26 2024-04-26 太原理工大学 一种实时测量气体在液体中溶解参数的恒压装置及方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5267455A (en) * 1992-07-13 1993-12-07 The Clorox Company Liquid/supercritical carbon dioxide dry cleaning system

Also Published As

Publication number Publication date
EP0726099A3 (OSRAM) 1996-09-11
DE69610652D1 (de) 2000-11-23
EP0726099B1 (en) 2000-10-18
EP0726099A2 (en) 1996-08-14
JPH08252549A (ja) 1996-10-01

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Legal Events

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