DE69606690T2 - Magnetometrischer Sensor mit zwei aus spinpolarisiertem Material magnetisch isolierten Bereichen und durch dessen Verwendung erhältlicher Magnetkopf - Google Patents

Magnetometrischer Sensor mit zwei aus spinpolarisiertem Material magnetisch isolierten Bereichen und durch dessen Verwendung erhältlicher Magnetkopf

Info

Publication number
DE69606690T2
DE69606690T2 DE69606690T DE69606690T DE69606690T2 DE 69606690 T2 DE69606690 T2 DE 69606690T2 DE 69606690 T DE69606690 T DE 69606690T DE 69606690 T DE69606690 T DE 69606690T DE 69606690 T2 DE69606690 T2 DE 69606690T2
Authority
DE
Germany
Prior art keywords
spin
magnetic head
magnetometric sensor
magnetically isolated
polarized material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69606690T
Other languages
English (en)
Other versions
DE69606690D1 (de
Inventor
Takashi Manako
Yoshimi Kubo
Yuichi Shimakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69606690D1 publication Critical patent/DE69606690D1/de
Application granted granted Critical
Publication of DE69606690T2 publication Critical patent/DE69606690T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
DE69606690T 1995-11-30 1996-11-27 Magnetometrischer Sensor mit zwei aus spinpolarisiertem Material magnetisch isolierten Bereichen und durch dessen Verwendung erhältlicher Magnetkopf Expired - Lifetime DE69606690T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31238095 1995-11-30

Publications (2)

Publication Number Publication Date
DE69606690D1 DE69606690D1 (de) 2000-03-23
DE69606690T2 true DE69606690T2 (de) 2000-09-28

Family

ID=18028566

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69606690T Expired - Lifetime DE69606690T2 (de) 1995-11-30 1996-11-27 Magnetometrischer Sensor mit zwei aus spinpolarisiertem Material magnetisch isolierten Bereichen und durch dessen Verwendung erhältlicher Magnetkopf

Country Status (3)

Country Link
US (1) US5721654A (de)
EP (1) EP0777212B1 (de)
DE (1) DE69606690T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6721149B1 (en) * 2000-02-11 2004-04-13 Western Digital (Fremont), Inc. Tunneling magnetoresistance spin-valve read sensor with LaNiO3 spacer
AU2001249845A1 (en) * 2000-04-06 2001-10-23 Sang-Wook Cheong Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (ca, sr, ba) fe0.5mo0.5o3
AU2002230791A1 (en) * 2000-10-26 2002-05-06 University Of Iowa Research Foundation Unipolar spin diode and transistor and the applications of the same
WO2005060657A2 (en) * 2003-12-15 2005-07-07 Yale University Magnetoelectronic devices based on colossal magnetoresistive thin films
JP6121311B2 (ja) * 2013-11-14 2017-04-26 アルプス電気株式会社 磁気検知装置
US9276197B2 (en) * 2013-11-21 2016-03-01 The United States Of America As Represented By The Secretary Of The Navy Hybrid domain wall-hall cross device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487356A (en) * 1992-08-07 1996-01-30 Advanced Technology Materials, Inc. Chemical vapor deposition method of growing oxide films with giant magnetoresistance
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
JP3364309B2 (ja) * 1993-03-15 2003-01-08 株式会社東芝 磁気抵抗効果素子および磁気記録装置
US5493465A (en) * 1993-03-15 1996-02-20 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetic recording apparatus
DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur
US5411814A (en) * 1994-01-26 1995-05-02 At&T Corp. Article comprising magnetoresistive oxide of La, Ca, Mn additionally containing either of both of Sr and Ba
GB2291205A (en) * 1994-06-18 1996-01-17 Univ Sheffield Magnetic field responsive device
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation

Also Published As

Publication number Publication date
EP0777212A2 (de) 1997-06-04
US5721654A (en) 1998-02-24
EP0777212B1 (de) 2000-02-16
EP0777212A3 (de) 1998-01-28
DE69606690D1 (de) 2000-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TDK CORP., TOKIO/TOKYO, JP

8320 Willingness to grant licences declared (paragraph 23)