DE69603677D1 - Verfahren zur Herstellung von Aluminiumnitridwhiskern - Google Patents
Verfahren zur Herstellung von AluminiumnitridwhiskernInfo
- Publication number
- DE69603677D1 DE69603677D1 DE69603677T DE69603677T DE69603677D1 DE 69603677 D1 DE69603677 D1 DE 69603677D1 DE 69603677 T DE69603677 T DE 69603677T DE 69603677 T DE69603677 T DE 69603677T DE 69603677 D1 DE69603677 D1 DE 69603677D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- aluminum nitride
- nitride whiskers
- whiskers
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
- C01B21/0726—Preparation by carboreductive nitridation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9507278A FR2735466B1 (fr) | 1995-06-19 | 1995-06-19 | Procede de fabrication de trichites de nitrure d'aluminium |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603677D1 true DE69603677D1 (de) | 1999-09-16 |
DE69603677T2 DE69603677T2 (de) | 2000-04-06 |
Family
ID=9480123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603677T Expired - Fee Related DE69603677T2 (de) | 1995-06-19 | 1996-06-17 | Verfahren zur Herstellung von Aluminiumnitridwhiskern |
Country Status (6)
Country | Link |
---|---|
US (1) | US5688320A (de) |
EP (1) | EP0749940B1 (de) |
JP (1) | JPH09118598A (de) |
CA (1) | CA2179345A1 (de) |
DE (1) | DE69603677T2 (de) |
FR (1) | FR2735466B1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1067969C (zh) * | 1998-07-24 | 2001-07-04 | 清华大学 | 氮化铝晶须的制备方法 |
JP4558584B2 (ja) * | 2004-07-08 | 2010-10-06 | 日本碍子株式会社 | 窒化アルミニウム単結晶の製造方法 |
JP5349373B2 (ja) * | 2004-07-08 | 2013-11-20 | 日本碍子株式会社 | 窒化アルミニウム単結晶の製造方法 |
EP2224041A4 (de) * | 2007-11-22 | 2014-06-11 | Univ Meijo | Polygonales kolumnares material von aluminiumnitrideinkristall und verfahren zur herstellung von plattenartigem aluminiumnitrideinrkistall unter verwendung des polygonalen kolumnaren materials |
JP5315970B2 (ja) * | 2008-12-15 | 2013-10-16 | 三菱化学株式会社 | 高アスペクト比を有する窒化アルミニウム、その製造方法、それを用いた樹脂組成物 |
US8142861B2 (en) | 2009-05-11 | 2012-03-27 | King Fahd University Of Petroleum & Minerals | Method of carbo-nitriding alumina surfaces |
US8147926B2 (en) * | 2009-05-18 | 2012-04-03 | King Fahd University Of Petroleum & Minerals | Laser gas assisted nitriding of alumina surfaces |
JP5627515B2 (ja) * | 2011-03-15 | 2014-11-19 | 株式会社トクヤマ | 窒化アルミニウム粉末およびその製造方法 |
US9216906B2 (en) * | 2013-12-25 | 2015-12-22 | National Chung Shan Institute Of Science And Technology | Method for manufacturing aluminum nitride powder |
WO2015182477A1 (ja) * | 2014-05-30 | 2015-12-03 | 国立大学法人名古屋大学 | AlN結晶の作製方法、AlN結晶、及びAlN結晶を含む有機化合物 |
KR20160086648A (ko) * | 2015-01-12 | 2016-07-20 | 엘티씨 (주) | 질화알루미늄 휘스커의 제조방법 |
JP6635826B2 (ja) * | 2016-02-26 | 2020-01-29 | 株式会社トクヤマ | 窒化アルミニウムウィスカーの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR427109A (fr) * | 1910-05-19 | 1911-07-27 | Ottokar Serpek | Procédé pour la fabrication de l'azoture d'aluminium |
US3598526A (en) * | 1967-04-27 | 1971-08-10 | Dow Chemical Co | Method for preparing monocrystalline aluminum nitride |
DE3572155D1 (en) * | 1984-09-28 | 1989-09-14 | Toshiba Kk | Process for production of readily sinterable aluminum nitride powder |
JP2579760B2 (ja) * | 1987-03-03 | 1997-02-12 | 住友化学工業株式会社 | 反応炉 |
US4917877A (en) * | 1987-10-14 | 1990-04-17 | Nippon Light Metal Co., Ltd. | Process for producing aluminum nitride powder |
US4806198A (en) * | 1987-11-02 | 1989-02-21 | Cornell Research Foundation, Inc. | Producing alpha-alumina whiskers |
JPH03187998A (ja) * | 1989-12-14 | 1991-08-15 | Showa Denko Kk | 窒化アルミニウムウィスカーの製造方法 |
US5190738A (en) * | 1991-06-17 | 1993-03-02 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
US5246683A (en) * | 1991-07-03 | 1993-09-21 | Alcan Internatonal Limited | Process for producing small particles of aluminum nitride and particles so-produced |
-
1995
- 1995-06-19 FR FR9507278A patent/FR2735466B1/fr not_active Expired - Fee Related
-
1996
- 1996-06-17 DE DE69603677T patent/DE69603677T2/de not_active Expired - Fee Related
- 1996-06-17 EP EP96401307A patent/EP0749940B1/de not_active Expired - Lifetime
- 1996-06-17 US US08/665,368 patent/US5688320A/en not_active Expired - Fee Related
- 1996-06-18 JP JP8157206A patent/JPH09118598A/ja active Pending
- 1996-06-18 CA CA002179345A patent/CA2179345A1/fr not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US5688320A (en) | 1997-11-18 |
EP0749940B1 (de) | 1999-08-11 |
EP0749940A1 (de) | 1996-12-27 |
DE69603677T2 (de) | 2000-04-06 |
JPH09118598A (ja) | 1997-05-06 |
CA2179345A1 (fr) | 1996-12-20 |
FR2735466B1 (fr) | 1997-08-22 |
FR2735466A1 (fr) | 1996-12-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |