DE69603569T2 - Verfahren zur Substratschadensreduzierung bei PECVD - Google Patents

Verfahren zur Substratschadensreduzierung bei PECVD

Info

Publication number
DE69603569T2
DE69603569T2 DE69603569T DE69603569T DE69603569T2 DE 69603569 T2 DE69603569 T2 DE 69603569T2 DE 69603569 T DE69603569 T DE 69603569T DE 69603569 T DE69603569 T DE 69603569T DE 69603569 T2 DE69603569 T2 DE 69603569T2
Authority
DE
Germany
Prior art keywords
pecvd
substrate damage
damage reduction
reduction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69603569T
Other languages
English (en)
Other versions
DE69603569D1 (de
Inventor
Donna Rizzone Cote
John Curt Forster
Virinder Singh Grewal
Anthony Joseph Konecni
Dragan Valentin Podlesnik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
International Business Machines Corp
Original Assignee
Siemens AG
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, International Business Machines Corp filed Critical Siemens AG
Application granted granted Critical
Publication of DE69603569D1 publication Critical patent/DE69603569D1/de
Publication of DE69603569T2 publication Critical patent/DE69603569T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE69603569T 1995-12-19 1996-12-12 Verfahren zur Substratschadensreduzierung bei PECVD Expired - Fee Related DE69603569T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/574,748 US5926689A (en) 1995-12-19 1995-12-19 Process for reducing circuit damage during PECVD in single wafer PECVD system

Publications (2)

Publication Number Publication Date
DE69603569D1 DE69603569D1 (de) 1999-09-09
DE69603569T2 true DE69603569T2 (de) 2000-02-24

Family

ID=24297471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69603569T Expired - Fee Related DE69603569T2 (de) 1995-12-19 1996-12-12 Verfahren zur Substratschadensreduzierung bei PECVD

Country Status (6)

Country Link
US (1) US5926689A (de)
EP (1) EP0780491B1 (de)
JP (1) JP3084243B2 (de)
KR (1) KR100256462B1 (de)
DE (1) DE69603569T2 (de)
TW (1) TW307027B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207587B1 (en) 1997-06-24 2001-03-27 Micron Technology, Inc. Method for forming a dielectric
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
FR2797996B1 (fr) * 1999-08-25 2003-10-03 Gemplus Card Int Procede de protection de puces de circuit integre par depot de couche mince isolante
US6660646B1 (en) * 2000-09-21 2003-12-09 Northrop Grumman Corporation Method for plasma hardening photoresist in etching of semiconductor and superconductor films
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
KR100501185B1 (ko) * 2002-12-10 2005-07-18 삼성전기주식회사 Ｍｅｍｓ 정전용량형 센서의 출력 레벨 균일화 방법 및 장치
CN1313640C (zh) * 2003-09-18 2007-05-02 中芯国际集成电路制造(上海)有限公司 等离子体增强式化学气相沉积处理方法
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7259111B2 (en) * 2005-01-19 2007-08-21 Applied Materials, Inc. Interface engineering to improve adhesion between low k stacks
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
JP2009152265A (ja) 2007-12-19 2009-07-09 Tohoku Univ 光電変換素子製造装置及び方法、並びに光電変換素子

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426274A (en) * 1981-06-02 1984-01-17 International Business Machines Corporation Reactive ion etching apparatus with interlaced perforated anode
CH668145A5 (fr) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4826784A (en) * 1987-11-13 1989-05-02 Kopin Corporation Selective OMCVD growth of compound semiconductor materials on silicon substrates
US4851367A (en) * 1988-08-17 1989-07-25 Eastman Kodak Company Method of making primary current detector using plasma enhanced chemical vapor deposition
JPH02119125A (ja) * 1988-10-28 1990-05-07 Sumitomo Electric Ind Ltd アモルファスシリコンゲルマニウム薄膜の製造方法
US5370912A (en) * 1988-10-31 1994-12-06 Norton Company Diamond film deposition with a microwave plasma
US5017403A (en) * 1989-04-13 1991-05-21 Massachusetts Institute Of Technology Process for forming planarized films
US4962049A (en) * 1989-04-13 1990-10-09 Applied Materials, Inc. Process for the plasma treatment of the backside of a semiconductor wafer
US5120680A (en) * 1990-07-19 1992-06-09 At&T Bell Laboratories Method for depositing dielectric layers
US5082542A (en) * 1990-08-02 1992-01-21 Texas Instruments Incorporated Distributed-array magnetron-plasma processing module and method
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5260236A (en) * 1991-06-07 1993-11-09 Intel Corporation UV transparent oxynitride deposition in single wafer PECVD system
US5271972A (en) * 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
DE69433836D1 (de) * 1993-12-28 2004-07-15 Applied Materials Inc Verfahren zur plasma-unterstützten chemischen Dampfabscheidung von Silizium-Oxynitridschichten
US5637190A (en) * 1995-09-15 1997-06-10 Vanguard International Semiconductor Corporation Plasma purge method for plasma process particle control

Also Published As

Publication number Publication date
JP3084243B2 (ja) 2000-09-04
EP0780491B1 (de) 1999-08-04
JPH09181064A (ja) 1997-07-11
EP0780491A1 (de) 1997-06-25
US5926689A (en) 1999-07-20
DE69603569D1 (de) 1999-09-09
TW307027B (en) 1997-06-01
KR100256462B1 (ko) 2000-05-15

Similar Documents

Publication Publication Date Title
DE69812869D1 (de) Verfahren zur Substratbearbeitung
DE69417268T4 (de) Verfahren zur elektronischen lizenzverteilung
DE69718715T2 (de) Verfahren zur geschichteter Transaktionsverarbeitung
DE69603255T2 (de) Verfahren zur modifizierung von oberflächen
DE69513987D1 (de) Verfahren zur transesterifikation
DE69704097D1 (de) Yttrium-enthaltende hartstoffbeschichtung und verfahren zur ablagerung derselben
DE69732243D1 (de) Verfahren zur schaumbeschichtung
DE69607560T2 (de) Schleifblatt und Verfahren zu seiner Herstellung
DE69622614T2 (de) Verfahren zur adaptiven Fehlerdiffusion
DE69624934T2 (de) Verfahren zur gerichteten abscheidung chemisch definierter körper
DE69727395D1 (de) Verfahren zur olefinisomerisierung
DE69830758D1 (de) Verfahren zur Oberflächenbehandlung
DE69811802T2 (de) Verfahren zur Transesterification
DE69605837D1 (de) Verfahren zur Risswachstumsverringerung
DE69630686D1 (de) Verfahren zur echtheitsprüfung von münzen
DE731191T1 (de) Verfahren zur Verringerung der Korrosion
DE69603569T2 (de) Verfahren zur Substratschadensreduzierung bei PECVD
DE69602533T2 (de) Verfahren zur momomerrekuperation
DE69632362D1 (de) Verfahren zum Erhalt einer Poststückintegrität
DE59603312D1 (de) Verfahren zur reaktiven Schichtabscheidung
DE69605561T2 (de) Verfahren zur beschichtung
DE69601540D1 (de) Verfahren zur oxychlorierung
DE69609963D1 (de) Verfahren zur iodierung
DE59710600D1 (de) Verfahren zur Lackierung von Substraten
DE69824357D1 (de) Verfahren und Vorrichtung zur Herstellung und Beschichtung von Flaschen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee