DE69533365D1 - Schaltungsnetzwerk und verfahren für atomische ketten - Google Patents
Schaltungsnetzwerk und verfahren für atomische kettenInfo
- Publication number
- DE69533365D1 DE69533365D1 DE69533365T DE69533365T DE69533365D1 DE 69533365 D1 DE69533365 D1 DE 69533365D1 DE 69533365 T DE69533365 T DE 69533365T DE 69533365 T DE69533365 T DE 69533365T DE 69533365 D1 DE69533365 D1 DE 69533365D1
- Authority
- DE
- Germany
- Prior art keywords
- atoms
- chain
- lattice
- separation distance
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/707—Integrated with dissimilar structures on a common substrate having different types of nanoscale structures or devices on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/788—Of specified organic or carbon-based composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
- Y10S977/858—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including positioning/mounting nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/336,852 US5981316A (en) | 1994-11-08 | 1994-11-08 | Method of fabrication of atomic chain circuit network |
US336852 | 1994-11-08 | ||
PCT/US1995/014574 WO1996014664A1 (en) | 1994-11-08 | 1995-11-08 | Atomic chain circuit network and method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69533365D1 true DE69533365D1 (de) | 2004-09-16 |
DE69533365T2 DE69533365T2 (de) | 2005-02-17 |
Family
ID=23317954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69533365T Expired - Fee Related DE69533365T2 (de) | 1994-11-08 | 1995-11-08 | Schaltungsnetzwerk und verfahren für atomische ketten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5981316A (de) |
EP (1) | EP0791229B1 (de) |
AT (1) | ATE273565T1 (de) |
DE (1) | DE69533365T2 (de) |
WO (1) | WO1996014664A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331454B1 (en) * | 1994-11-08 | 2001-12-18 | Board Of Regents Of The Leland Stanford Junior University | Atomic-level electronic network and method of fabrication |
JPH1065145A (ja) * | 1996-08-22 | 1998-03-06 | Hitachi Ltd | 電導性原子サイズ細線および原子サイズスイッチ |
US6336084B1 (en) * | 1999-05-11 | 2002-01-01 | Ford Global Technologies, Inc. | Three-way catalyst model for an engine air-to-fuel ratio control system |
US7015546B2 (en) * | 2000-02-23 | 2006-03-21 | Semiconductor Research Corporation | Deterministically doped field-effect devices and methods of making same |
US6664559B1 (en) | 2000-02-23 | 2003-12-16 | Semiconductor Research Corporation | Supermolecular structures and devices made from same |
US20040072994A1 (en) * | 2002-10-15 | 2004-04-15 | Herr Daniel J.C. | Nanostructures including controllably positioned and aligned synthetic nanotubes, and related methods |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988823A (en) * | 1974-08-26 | 1976-11-02 | Hughes Aircraft Company | Method for fabrication of multilayer interconnected microelectronic devices having small vias therein |
US4122479A (en) * | 1975-01-31 | 1978-10-24 | Hitachi, Ltd. | Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body |
US4589191A (en) * | 1983-10-20 | 1986-05-20 | Unisearch Limited | Manufacture of high efficiency solar cells |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
US4987312A (en) * | 1989-11-07 | 1991-01-22 | International Business Machines Corporation | Process for repositioning atoms on a surface using a scanning tunneling microscope |
WO1992012528A1 (en) * | 1991-01-11 | 1992-07-23 | Hitachi Limited | Surface atom machining method and apparatus |
US5187113A (en) * | 1991-05-17 | 1993-02-16 | United Technologies Corporation | Field oxide termination and gate oxide formation |
US5561300A (en) * | 1991-12-24 | 1996-10-01 | Hitachi, Ltd. | Atomic switching devices and logical circuits |
DE69301885T2 (de) * | 1992-08-13 | 1996-10-31 | Sony Corp | Quantenbauelement und dessen Herstellungsverfahren |
US5382815A (en) * | 1993-12-23 | 1995-01-17 | International Business Machines Corporation | Carrier conduction conductor-insulator semiconductor (CIS) transistor |
US5436499A (en) * | 1994-03-11 | 1995-07-25 | Spire Corporation | High performance GaAs devices and method |
-
1994
- 1994-11-08 US US08/336,852 patent/US5981316A/en not_active Expired - Fee Related
-
1995
- 1995-11-08 WO PCT/US1995/014574 patent/WO1996014664A1/en active IP Right Grant
- 1995-11-08 DE DE69533365T patent/DE69533365T2/de not_active Expired - Fee Related
- 1995-11-08 AT AT95941374T patent/ATE273565T1/de not_active IP Right Cessation
- 1995-11-08 EP EP95941374A patent/EP0791229B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0791229A4 (de) | 1998-04-29 |
DE69533365T2 (de) | 2005-02-17 |
WO1996014664A1 (en) | 1996-05-17 |
EP0791229B1 (de) | 2004-08-11 |
US5981316A (en) | 1999-11-09 |
EP0791229A1 (de) | 1997-08-27 |
ATE273565T1 (de) | 2004-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |