DE69527004D1 - Metallisierung für Polymerdielektrikum-Multichipmodule - Google Patents

Metallisierung für Polymerdielektrikum-Multichipmodule

Info

Publication number
DE69527004D1
DE69527004D1 DE69527004T DE69527004T DE69527004D1 DE 69527004 D1 DE69527004 D1 DE 69527004D1 DE 69527004 T DE69527004 T DE 69527004T DE 69527004 T DE69527004 T DE 69527004T DE 69527004 D1 DE69527004 D1 DE 69527004D1
Authority
DE
Germany
Prior art keywords
metallization
polymer dielectric
multichip modules
multichip
modules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69527004T
Other languages
German (de)
English (en)
Inventor
Aaron Leonard Frank
Douglas Bradford Johnson
Ajibola Olutoyin Ibidunni
Dennis Lyle Krause
Trac Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69527004D1 publication Critical patent/DE69527004D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69527004T 1994-05-09 1995-04-26 Metallisierung für Polymerdielektrikum-Multichipmodule Expired - Lifetime DE69527004D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/239,797 US5466972A (en) 1994-05-09 1994-05-09 Metallization for polymer-dielectric multichip modules including a Ti/Pd alloy layer

Publications (1)

Publication Number Publication Date
DE69527004D1 true DE69527004D1 (de) 2002-07-18

Family

ID=22903785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527004T Expired - Lifetime DE69527004D1 (de) 1994-05-09 1995-04-26 Metallisierung für Polymerdielektrikum-Multichipmodule

Country Status (6)

Country Link
US (2) US5466972A (enExample)
EP (1) EP0682368B1 (enExample)
JP (1) JPH07307538A (enExample)
KR (1) KR950034679A (enExample)
DE (1) DE69527004D1 (enExample)
TW (1) TW286425B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466972A (en) * 1994-05-09 1995-11-14 At&T Corp. Metallization for polymer-dielectric multichip modules including a Ti/Pd alloy layer
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6430810B1 (en) * 1997-10-28 2002-08-13 Uniax Corporation Mechanical scribing methods of forming a patterned metal layer in an electronic device
US6181004B1 (en) 1999-01-22 2001-01-30 Jerry D. Koontz Digital signal processing assembly and test method
JP2000286549A (ja) 1999-03-24 2000-10-13 Fujitsu Ltd バイアコネクションを備えた基板の製造方法
SE514961C2 (sv) * 1999-09-23 2001-05-21 Ericsson Telefon Ab L M Ledarstruktur på ett dielektriskt material, samt metod för tillverknig av ledarstrukturen
KR100313706B1 (ko) 1999-09-29 2001-11-26 윤종용 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법
KR100352661B1 (ko) * 2000-02-10 2002-09-12 퀄리플로나라테크 주식회사 반도체 소자 배선용 구리 박막의 증착속도를 높이기 위한전처리 세정방법
US6742248B2 (en) * 2001-05-14 2004-06-01 The Boeing Company Method of forming a soldered electrical connection
ATE475999T1 (de) 2003-03-04 2010-08-15 Rohm & Haas Elect Mat Koaxiale wellenleitermikrostrukturen und verfahern zu ihrer bildung
FR2877677B1 (fr) * 2004-11-05 2006-12-15 Stephanois Rech Mec Utilisation d'un alliage a base de titane-cuivre-nickel
EP1791278A1 (en) * 2005-11-29 2007-05-30 Interuniversitair Microelektronica Centrum (IMEC) Device and method for calibrating MIMO systems
EP1939137B1 (en) 2006-12-30 2016-08-24 Nuvotronics, LLC Three-dimensional microstructures and methods of formation thereof
KR101472134B1 (ko) 2007-03-20 2014-12-15 누보트로닉스, 엘.엘.씨 동축 전송선 마이크로구조물 및 그의 형성방법
US7755174B2 (en) 2007-03-20 2010-07-13 Nuvotonics, LLC Integrated electronic components and methods of formation thereof
EP2251920A1 (en) 2009-05-12 2010-11-17 Università Degli Studi Di Milano - Bicocca Method of manufacturing electrical contacts on organic semiconductors
US20110123783A1 (en) 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
US8917150B2 (en) * 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
KR101917052B1 (ko) * 2010-01-22 2019-01-30 누보트로닉스, 인크. 열관리
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) * 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
KR101982887B1 (ko) 2011-07-13 2019-05-27 누보트로닉스, 인크. 전자 및 기계 구조체들을 제조하는 방법들
CN104221130B (zh) 2012-02-24 2018-04-24 天工方案公司 与化合物半导体的铜互连相关的改善的结构、装置和方法
US9024453B2 (en) * 2012-03-29 2015-05-05 Intel Corporation Functional material systems and processes for package-level interconnects
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
WO2015109208A2 (en) 2014-01-17 2015-07-23 Nuvotronics, Llc Wafer scale test interface unit: low loss and high isolation devices and methods for high speed and high density mixed signal interconnects and contactors
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
WO2016094129A1 (en) 2014-12-03 2016-06-16 Nuvotronics, Inc. Systems and methods for manufacturing stacked circuits and transmission lines
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
DE102019135097A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
DE102019135099A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016050A (en) * 1975-05-12 1977-04-05 Bell Telephone Laboratories, Incorporated Conduction system for thin film and hybrid integrated circuits
JPS59167096A (ja) * 1983-03-11 1984-09-20 日本電気株式会社 回路基板
US4601972A (en) * 1984-04-06 1986-07-22 At&T Technologies, Inc. Photodefinable triazine based composition
US4554229A (en) * 1984-04-06 1985-11-19 At&T Technologies, Inc. Multilayer hybrid integrated circuit
US5236789A (en) * 1991-07-01 1993-08-17 Olin Corporation Palladium alloys having utility in electrical applications
US5288951A (en) * 1992-10-30 1994-02-22 At&T Bell Laboratories Copper-based metallizations for hybrid integrated circuits
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
US5466972A (en) * 1994-05-09 1995-11-14 At&T Corp. Metallization for polymer-dielectric multichip modules including a Ti/Pd alloy layer

Also Published As

Publication number Publication date
TW286425B (enExample) 1996-09-21
JPH07307538A (ja) 1995-11-21
EP0682368A3 (en) 1996-05-01
KR950034679A (ko) 1995-12-28
EP0682368B1 (en) 2002-06-12
EP0682368A2 (en) 1995-11-15
US5622895A (en) 1997-04-22
US5466972A (en) 1995-11-14

Similar Documents

Publication Publication Date Title
DE69527004D1 (de) Metallisierung für Polymerdielektrikum-Multichipmodule
ATE291331T1 (de) Teilnehmerkonzentratorsystem für schnurlose teilnehmeranschlüsse
DE69638295D1 (de) Halbleiterleistungsmodul
DE69529042D1 (de) Halbleiterschaltung
DE69710829D1 (de) Zusatzmodul für trennschalter
BR9507097A (pt) Módulo de assinante
DE59611245D1 (de) Leistungshalbleitermodul
DE59501856D1 (de) Leistungsschaltermodul
FI962213A7 (fi) Sähköinen kytkentälaite
DE69711772D1 (de) Packungsstruktur für Multichip-Module
DE69607121D1 (de) Gehäuse, insbesondere für elektrische Geräte
NO963667D0 (no) Kobber-katalysator
DE59611068D1 (de) Leistungs-Halbleitermodul
BR9701911A (pt) Conjunto de montagem para blocos de terminal elétrico
DE59508681D1 (de) Leistungshalbleitermodul
DE59812260D1 (de) Kühlblechverbindungsklammer für Leistungshalbleiter
BR9601534A (pt) Dispositivo de comutação elétrica
DE59610548D1 (de) Leistungshalbleitermodul
DE69003997D1 (de) Leistungsverteilereinrichtung für Elektroinstallationen.
DE59708851D1 (de) Anschlussmodul für die Telekommunikationstechnik
IT1296830B1 (it) Dispositivo per collegare contatti elettrici
DE59610806D1 (de) Mehrzellenfunksystem mit PBX-Peripheriebaugruppen
DE59611447D1 (de) Leistungs-Halbleitermodul
DE69938443D1 (de) Halbleiter-IGBT-Modul
DE69529386D1 (de) Verbesserungen für Halbleiteranordnungen

Legal Events

Date Code Title Description
8332 No legal effect for de