DE69515788T2 - Ein-Lagenresist Abhebeverfahren zur Erzeugung eines Musters auf einem Träger - Google Patents

Ein-Lagenresist Abhebeverfahren zur Erzeugung eines Musters auf einem Träger

Info

Publication number
DE69515788T2
DE69515788T2 DE69515788T DE69515788T DE69515788T2 DE 69515788 T2 DE69515788 T2 DE 69515788T2 DE 69515788 T DE69515788 T DE 69515788T DE 69515788 T DE69515788 T DE 69515788T DE 69515788 T2 DE69515788 T2 DE 69515788T2
Authority
DE
Germany
Prior art keywords
creating
carrier
pattern
layer resist
resist lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515788T
Other languages
English (en)
Other versions
DE69515788D1 (de
Inventor
Duanfu Stephen Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69515788D1 publication Critical patent/DE69515788D1/de
Publication of DE69515788T2 publication Critical patent/DE69515788T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE69515788T 1994-10-21 1995-08-24 Ein-Lagenresist Abhebeverfahren zur Erzeugung eines Musters auf einem Träger Expired - Fee Related DE69515788T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32516494A 1994-10-21 1994-10-21

Publications (2)

Publication Number Publication Date
DE69515788D1 DE69515788D1 (de) 2000-04-27
DE69515788T2 true DE69515788T2 (de) 2000-09-07

Family

ID=23266714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515788T Expired - Fee Related DE69515788T2 (de) 1994-10-21 1995-08-24 Ein-Lagenresist Abhebeverfahren zur Erzeugung eines Musters auf einem Träger

Country Status (4)

Country Link
US (1) US5654128A (de)
EP (1) EP0708372B1 (de)
JP (1) JPH08124848A (de)
DE (1) DE69515788T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334542A (en) * 1991-11-27 1994-08-02 Oki Electric Industry Co., Ltd. Method of forming T-shaped electrode
DE19646970A1 (de) * 1996-11-14 1998-05-20 Iris Bohnet Verfahren zur Bildung einer elektrischen Verbindung bei Multi-Layer-Leiterplatten und Verfahren zur Herstellung einer solchen
GB9722861D0 (en) 1997-10-29 1997-12-24 Horsell Graphic Ind Ltd Improvements in relation to the manufacture of lithographic printing forms
WO1999008879A1 (en) 1997-08-14 1999-02-25 Kodak Polychrome Graphics Company Ltd. Method of making masks and electronic parts
US6469877B1 (en) 1999-06-15 2002-10-22 Read-Rite Corporation Spin valve device with improved exchange layer defined track width and method of fabrication
US6303416B1 (en) * 1999-10-07 2001-10-16 International Business Machines Corporation Method to reduce plasma etch fluting
KR100309474B1 (ko) * 1999-11-05 2001-11-02 박종섭 금속배선 형성방법
US6713237B2 (en) 2000-07-27 2004-03-30 Seagate Technology Llc Single layer lift-off method for making an electronic device
US20030129843A1 (en) * 2001-10-05 2003-07-10 Yongming Cai Planarizing recess etch
US6852464B2 (en) 2002-01-10 2005-02-08 Kodak Polychrome Graphics, Llc Method of manufacturing a thermally imageable element
US6793778B2 (en) 2002-07-15 2004-09-21 Hitachi Global Storage Technologies Netherlands N.V. Method of fabricating slider pads for a transducer operating with moving magnetic media
US6849372B2 (en) 2002-07-30 2005-02-01 Kodak Polychrome Graphics Method of manufacturing imaging compositions
JP4085384B2 (ja) * 2003-06-09 2008-05-14 ミネベア株式会社 薄膜パターンの形成方法
KR101112538B1 (ko) * 2004-07-27 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8623737B2 (en) * 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US20070134943A2 (en) * 2006-04-02 2007-06-14 Dunnrowicz Clarence J Subtractive - Additive Edge Defined Lithography
US9196270B1 (en) 2006-12-07 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetoresistive element having small critical dimensions
KR101446910B1 (ko) * 2007-12-27 2014-10-06 주식회사 동진쎄미켐 도전성 유리의 투명전도 산화막 패턴 형성방법 및 이에의하여 제조되는 도전성 유리
US8163185B1 (en) 2008-03-31 2012-04-24 Western Digital (Fremont), Llc Method and apparatus for lifting off photoresist beneath an overlayer
US8316527B2 (en) * 2008-04-01 2012-11-27 Western Digital (Fremont), Llc Method for providing at least one magnetoresistive device
US8349195B1 (en) 2008-06-27 2013-01-08 Western Digital (Fremont), Llc Method and system for providing a magnetoresistive structure using undercut free mask
TWI417318B (zh) 2011-07-28 2013-12-01 Ind Tech Res Inst 聚亞醯胺共聚物及圖案化金屬氧化物層之製造方法
EP2835687B1 (de) 2013-08-06 2017-03-15 Ams Ag Verfahren zur Herstellung einer Resiststruktur mit hinterschnittener Seitenwand
WO2018197379A1 (en) * 2017-04-25 2018-11-01 Merck Patent Gmbh Negative resist formulation for producing undercut pattern profiles
EP4350443A1 (de) * 2022-10-07 2024-04-10 Richemont International S.A. Form zur herstellung von metallischen bauteilen durch metallwachstum und verfahren zur herstellung einer solchen form

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119483A (en) * 1974-07-30 1978-10-10 U.S. Philips Corporation Method of structuring thin layers
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
US4814258A (en) * 1987-07-24 1989-03-21 Motorola Inc. PMGI bi-layer lift-off process
US4871651A (en) * 1988-06-27 1989-10-03 Ford Motor Copmpany Cryogenic process for metal lift-off

Also Published As

Publication number Publication date
US5654128A (en) 1997-08-05
EP0708372B1 (de) 2000-03-22
DE69515788D1 (de) 2000-04-27
JPH08124848A (ja) 1996-05-17
EP0708372A1 (de) 1996-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee