DE69506520D1 - Geschützter schalter - Google Patents
Geschützter schalterInfo
- Publication number
- DE69506520D1 DE69506520D1 DE69506520T DE69506520T DE69506520D1 DE 69506520 D1 DE69506520 D1 DE 69506520D1 DE 69506520 T DE69506520 T DE 69506520T DE 69506520 T DE69506520 T DE 69506520T DE 69506520 D1 DE69506520 D1 DE 69506520D1
- Authority
- DE
- Germany
- Prior art keywords
- protected switch
- protected
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9420572A GB9420572D0 (en) | 1994-10-12 | 1994-10-12 | A protected switch |
PCT/IB1995/000742 WO1996012346A2 (en) | 1994-10-12 | 1995-09-08 | A protected switch |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69506520D1 true DE69506520D1 (de) | 1999-01-21 |
DE69506520T2 DE69506520T2 (de) | 1999-06-24 |
Family
ID=10762734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69506520T Expired - Lifetime DE69506520T2 (de) | 1994-10-12 | 1995-09-08 | Geschützter schalter |
Country Status (7)
Country | Link |
---|---|
US (1) | US5801573A (de) |
EP (1) | EP0733283B1 (de) |
JP (1) | JP3639596B2 (de) |
KR (1) | KR100352733B1 (de) |
DE (1) | DE69506520T2 (de) |
GB (1) | GB9420572D0 (de) |
WO (1) | WO1996012346A2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3746604B2 (ja) | 1997-12-09 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6078204A (en) * | 1996-12-19 | 2000-06-20 | Texas Instruments Incorporated | High current drain-to-gate clamp/gate-to-source clamp for external power MOS transistors |
JP3544819B2 (ja) | 1997-03-31 | 2004-07-21 | 株式会社 沖マイクロデザイン | 入力回路および出力回路ならびに入出力回路 |
DE19739999C2 (de) * | 1997-09-11 | 2002-03-07 | Infineon Technologies Ag | Ansteuerschaltung für ein mittels Feldeffekt gesteuertes Leistungs-Halbleiterbauelement |
US6031302A (en) * | 1997-09-30 | 2000-02-29 | Conexant Systems, Inc. | Battery management system with current measurement across on-resistance of semiconductor cutout switch |
DE19823768A1 (de) | 1998-05-28 | 1999-12-02 | Bosch Gmbh Robert | Smartpower-Bauelement |
JP3164065B2 (ja) * | 1998-06-24 | 2001-05-08 | 日本電気株式会社 | 半導体装置 |
EP1143618B1 (de) * | 1999-09-20 | 2006-11-15 | Mitsubishi Denki Kabushiki Kaisha | Schaltung gegen überströmen in einem leistungshalbleiter |
JP2002335626A (ja) * | 2001-05-10 | 2002-11-22 | Nec System Technologies Ltd | 逆電流防止回路 |
DE10154763A1 (de) * | 2001-11-09 | 2003-05-22 | Continental Teves Ag & Co Ohg | Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern |
JP4267865B2 (ja) * | 2002-04-19 | 2009-05-27 | 株式会社デンソー | 負荷駆動装置 |
GB0222553D0 (en) * | 2002-09-28 | 2002-11-06 | Koninkl Philips Electronics Nv | A semiconductor device with sense structure |
GB0308758D0 (en) * | 2003-04-16 | 2003-05-21 | Koninkl Philips Electronics Nv | Protected power devices |
US7071740B2 (en) | 2003-12-30 | 2006-07-04 | Texas Instruments Incorporated | Current limiting circuit for high-speed low-side driver outputs |
US7301746B2 (en) * | 2005-09-21 | 2007-11-27 | Texas Instruments Incorporated | Thermal shutdown trip point modification during current limit |
JP4706462B2 (ja) * | 2005-12-07 | 2011-06-22 | トヨタ自動車株式会社 | 電流検出機能を有する半導体装置 |
US7852148B2 (en) * | 2009-03-27 | 2010-12-14 | Semiconductor Components Industries, Llc | Method of forming a sensing circuit and structure therefor |
US8935117B2 (en) * | 2012-03-09 | 2015-01-13 | Freescale Semiconductor, Inc. | Circuit and method for measuring voltage |
US20150333505A1 (en) * | 2012-12-20 | 2015-11-19 | Telefonaktiebolaget L M Ericsson (Publ) | Method and Apparatus Relating to Surge Protection |
EP3511986A1 (de) | 2018-01-16 | 2019-07-17 | Infineon Technologies Austria AG | Transistoranordnung mit einem lasttransistor und einem sensetransistor |
DE102020107747B4 (de) * | 2019-03-22 | 2023-07-20 | Infineon Technologies Ag | Transistoranordnung mit einem lasttransistor und einemerfassungstransistor und elektronische schaltung mit dieser |
CN113258953B (zh) * | 2021-06-25 | 2021-10-01 | 成都爱旗科技有限公司 | 一种射频设备、通信设备及射频设备的静电防护方法 |
JP2023046588A (ja) | 2021-09-24 | 2023-04-05 | 株式会社東芝 | 電源回路 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4136354A (en) * | 1977-09-15 | 1979-01-23 | National Semiconductor Corporation | Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level |
IE55753B1 (en) * | 1983-09-06 | 1991-01-02 | Gen Electric | Power semiconductor device with main current section and emulation current section |
US4667121A (en) * | 1986-05-27 | 1987-05-19 | Motorola, Inc. | Integrated circuit speed controller |
US4893158A (en) * | 1987-06-22 | 1990-01-09 | Nissan Motor Co., Ltd. | MOSFET device |
US5184272A (en) * | 1989-03-31 | 1993-02-02 | Hitachi, Ltd. | High-side switch with overcurrent protecting circuit |
US5018041A (en) * | 1989-06-16 | 1991-05-21 | National Semiconductor Corp. | Circuit for internal current limiting in a fast high side power switch |
US5084668A (en) * | 1990-06-08 | 1992-01-28 | Motorola, Inc. | System for sensing and/or controlling the level of current in a transistor |
US5079456A (en) * | 1990-11-05 | 1992-01-07 | Motorola, Inc. | Current monitoring and/or regulation for sense FET's |
US5272399A (en) * | 1992-02-25 | 1993-12-21 | Siemens Aktiengesellschaft | Circuit limiting the load current of a power MOSFET |
US5500619A (en) * | 1992-03-18 | 1996-03-19 | Fuji Electric Co., Ltd. | Semiconductor device |
JPH05315852A (ja) * | 1992-05-12 | 1993-11-26 | Fuji Electric Co Ltd | 電流制限回路および電流制限回路用定電圧源 |
US5423471A (en) * | 1992-10-02 | 1995-06-13 | United States Surgical Corporation | Apparatus for applying two-part surgical fasteners in laparoscopic or endoscopic procedures |
JP3084982B2 (ja) * | 1992-11-25 | 2000-09-04 | 富士電機株式会社 | 半導体装置 |
US5272392A (en) * | 1992-12-04 | 1993-12-21 | North American Philips Corporation | Current limited power semiconductor device |
-
1994
- 1994-10-12 GB GB9420572A patent/GB9420572D0/en active Pending
-
1995
- 1995-09-08 KR KR1019960703075A patent/KR100352733B1/ko not_active IP Right Cessation
- 1995-09-08 JP JP51305996A patent/JP3639596B2/ja not_active Expired - Fee Related
- 1995-09-08 WO PCT/IB1995/000742 patent/WO1996012346A2/en active IP Right Grant
- 1995-09-08 EP EP95929188A patent/EP0733283B1/de not_active Expired - Lifetime
- 1995-09-08 DE DE69506520T patent/DE69506520T2/de not_active Expired - Lifetime
-
1997
- 1997-06-27 US US08/884,104 patent/US5801573A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH09507369A (ja) | 1997-07-22 |
WO1996012346A3 (en) | 1996-06-27 |
US5801573A (en) | 1998-09-01 |
JP3639596B2 (ja) | 2005-04-20 |
EP0733283B1 (de) | 1998-12-09 |
KR100352733B1 (ko) | 2003-01-08 |
DE69506520T2 (de) | 1999-06-24 |
WO1996012346A2 (en) | 1996-04-25 |
GB9420572D0 (en) | 1994-11-30 |
KR960706716A (ko) | 1996-12-09 |
EP0733283A1 (de) | 1996-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |