DE69506520D1 - Geschützter schalter - Google Patents

Geschützter schalter

Info

Publication number
DE69506520D1
DE69506520D1 DE69506520T DE69506520T DE69506520D1 DE 69506520 D1 DE69506520 D1 DE 69506520D1 DE 69506520 T DE69506520 T DE 69506520T DE 69506520 T DE69506520 T DE 69506520T DE 69506520 D1 DE69506520 D1 DE 69506520D1
Authority
DE
Germany
Prior art keywords
protected switch
protected
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69506520T
Other languages
English (en)
Other versions
DE69506520T2 (de
Inventor
Brendan Kelly
Royce Lowis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69506520D1 publication Critical patent/DE69506520D1/de
Publication of DE69506520T2 publication Critical patent/DE69506520T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE69506520T 1994-10-12 1995-09-08 Geschützter schalter Expired - Lifetime DE69506520T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9420572A GB9420572D0 (en) 1994-10-12 1994-10-12 A protected switch
PCT/IB1995/000742 WO1996012346A2 (en) 1994-10-12 1995-09-08 A protected switch

Publications (2)

Publication Number Publication Date
DE69506520D1 true DE69506520D1 (de) 1999-01-21
DE69506520T2 DE69506520T2 (de) 1999-06-24

Family

ID=10762734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506520T Expired - Lifetime DE69506520T2 (de) 1994-10-12 1995-09-08 Geschützter schalter

Country Status (7)

Country Link
US (1) US5801573A (de)
EP (1) EP0733283B1 (de)
JP (1) JP3639596B2 (de)
KR (1) KR100352733B1 (de)
DE (1) DE69506520T2 (de)
GB (1) GB9420572D0 (de)
WO (1) WO1996012346A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746604B2 (ja) * 1997-12-09 2006-02-15 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6078204A (en) * 1996-12-19 2000-06-20 Texas Instruments Incorporated High current drain-to-gate clamp/gate-to-source clamp for external power MOS transistors
JP3544819B2 (ja) 1997-03-31 2004-07-21 株式会社 沖マイクロデザイン 入力回路および出力回路ならびに入出力回路
DE19739999C2 (de) * 1997-09-11 2002-03-07 Infineon Technologies Ag Ansteuerschaltung für ein mittels Feldeffekt gesteuertes Leistungs-Halbleiterbauelement
US6031302A (en) * 1997-09-30 2000-02-29 Conexant Systems, Inc. Battery management system with current measurement across on-resistance of semiconductor cutout switch
DE19823768A1 (de) 1998-05-28 1999-12-02 Bosch Gmbh Robert Smartpower-Bauelement
JP3164065B2 (ja) * 1998-06-24 2001-05-08 日本電気株式会社 半導体装置
KR100427923B1 (ko) * 1999-09-20 2004-05-06 미쓰비시덴키 가부시키가이샤 전력 반도체 소자의 과전류 제한 회로
JP2002335626A (ja) * 2001-05-10 2002-11-22 Nec System Technologies Ltd 逆電流防止回路
DE10154763A1 (de) * 2001-11-09 2003-05-22 Continental Teves Ag & Co Ohg Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern
JP4267865B2 (ja) * 2002-04-19 2009-05-27 株式会社デンソー 負荷駆動装置
GB0222553D0 (en) * 2002-09-28 2002-11-06 Koninkl Philips Electronics Nv A semiconductor device with sense structure
GB0308758D0 (en) * 2003-04-16 2003-05-21 Koninkl Philips Electronics Nv Protected power devices
US7071740B2 (en) 2003-12-30 2006-07-04 Texas Instruments Incorporated Current limiting circuit for high-speed low-side driver outputs
US7301746B2 (en) * 2005-09-21 2007-11-27 Texas Instruments Incorporated Thermal shutdown trip point modification during current limit
JP4706462B2 (ja) * 2005-12-07 2011-06-22 トヨタ自動車株式会社 電流検出機能を有する半導体装置
US7852148B2 (en) * 2009-03-27 2010-12-14 Semiconductor Components Industries, Llc Method of forming a sensing circuit and structure therefor
US8935117B2 (en) * 2012-03-09 2015-01-13 Freescale Semiconductor, Inc. Circuit and method for measuring voltage
US20150333505A1 (en) * 2012-12-20 2015-11-19 Telefonaktiebolaget L M Ericsson (Publ) Method and Apparatus Relating to Surge Protection
EP3511986A1 (de) * 2018-01-16 2019-07-17 Infineon Technologies Austria AG Transistoranordnung mit einem lasttransistor und einem sensetransistor
CN111739886A (zh) * 2019-03-22 2020-10-02 英飞凌科技股份有限公司 具有负载晶体管和感测晶体管的晶体管布置
CN113258953B (zh) * 2021-06-25 2021-10-01 成都爱旗科技有限公司 一种射频设备、通信设备及射频设备的静电防护方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
IE55753B1 (en) * 1983-09-06 1991-01-02 Gen Electric Power semiconductor device with main current section and emulation current section
US4667121A (en) * 1986-05-27 1987-05-19 Motorola, Inc. Integrated circuit speed controller
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
US5184272A (en) * 1989-03-31 1993-02-02 Hitachi, Ltd. High-side switch with overcurrent protecting circuit
US5018041A (en) * 1989-06-16 1991-05-21 National Semiconductor Corp. Circuit for internal current limiting in a fast high side power switch
US5084668A (en) * 1990-06-08 1992-01-28 Motorola, Inc. System for sensing and/or controlling the level of current in a transistor
US5079456A (en) * 1990-11-05 1992-01-07 Motorola, Inc. Current monitoring and/or regulation for sense FET's
US5272399A (en) * 1992-02-25 1993-12-21 Siemens Aktiengesellschaft Circuit limiting the load current of a power MOSFET
US5500619A (en) * 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
JPH05315852A (ja) * 1992-05-12 1993-11-26 Fuji Electric Co Ltd 電流制限回路および電流制限回路用定電圧源
US5423471A (en) * 1992-10-02 1995-06-13 United States Surgical Corporation Apparatus for applying two-part surgical fasteners in laparoscopic or endoscopic procedures
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置
US5272392A (en) * 1992-12-04 1993-12-21 North American Philips Corporation Current limited power semiconductor device

Also Published As

Publication number Publication date
DE69506520T2 (de) 1999-06-24
GB9420572D0 (en) 1994-11-30
JP3639596B2 (ja) 2005-04-20
JPH09507369A (ja) 1997-07-22
US5801573A (en) 1998-09-01
WO1996012346A3 (en) 1996-06-27
WO1996012346A2 (en) 1996-04-25
EP0733283B1 (de) 1998-12-09
KR100352733B1 (ko) 2003-01-08
EP0733283A1 (de) 1996-09-25
KR960706716A (ko) 1996-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL