DE69503299D1 - Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung - Google Patents

Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung

Info

Publication number
DE69503299D1
DE69503299D1 DE69503299T DE69503299T DE69503299D1 DE 69503299 D1 DE69503299 D1 DE 69503299D1 DE 69503299 T DE69503299 T DE 69503299T DE 69503299 T DE69503299 T DE 69503299T DE 69503299 D1 DE69503299 D1 DE 69503299D1
Authority
DE
Germany
Prior art keywords
manufacture
gallium nitride
diode laser
nitride diode
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69503299T
Other languages
English (en)
Other versions
DE69503299T2 (de
Inventor
Shiro Yamazaki
Norikatsu Koide
Katsuhide Manabe
Isamu Akasaki
Hiroshi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Toyoda Gosei Co Ltd
Original Assignee
Research Development Corp of Japan
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26446245&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69503299(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP10605694A external-priority patent/JPH07297494A/ja
Application filed by Research Development Corp of Japan, Toyoda Gosei Co Ltd filed Critical Research Development Corp of Japan
Publication of DE69503299D1 publication Critical patent/DE69503299D1/de
Application granted granted Critical
Publication of DE69503299T2 publication Critical patent/DE69503299T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
DE69503299T 1994-04-20 1995-04-19 Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung Revoked DE69503299T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10605594 1994-04-20
JP10605694A JPH07297494A (ja) 1994-04-20 1994-04-20 窒化ガリウム系化合物半導体レーザダイオード

Publications (2)

Publication Number Publication Date
DE69503299D1 true DE69503299D1 (de) 1998-08-13
DE69503299T2 DE69503299T2 (de) 1999-01-21

Family

ID=26446245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69503299T Revoked DE69503299T2 (de) 1994-04-20 1995-04-19 Galliumnitrid-Diodenlaser und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US5583879A (de)
EP (1) EP0678945B1 (de)
DE (1) DE69503299T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751013A (en) * 1994-07-21 1998-05-12 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US6136626A (en) * 1994-06-09 2000-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JP3719613B2 (ja) * 1995-04-24 2005-11-24 シャープ株式会社 半導体発光素子
JP3728332B2 (ja) * 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
WO1997008759A1 (fr) * 1995-08-31 1997-03-06 Kabushiki Kaisha Toshiba Dispositif emetteur de lumiere bleue et son procede de fabrication
JPH0992882A (ja) * 1995-09-25 1997-04-04 Mitsubishi Electric Corp 半導体発光素子，及びその製造方法
TW425722B (en) * 1995-11-27 2001-03-11 Sumitomo Chemical Co Group III-V compound semiconductor and light-emitting device
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6284395B1 (en) 1997-03-05 2001-09-04 Corning Applied Technologies Corp. Nitride based semiconductors and devices
DE69835216T2 (de) * 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
RU2186447C2 (ru) * 1997-11-28 2002-07-27 Котелянский Иосиф Моисеевич Полупроводниковый прибор
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP2000031084A (ja) * 1998-05-08 2000-01-28 Samsung Electron Co Ltd 化合物半導体薄膜のｐ型への活性化方法
JP2000058917A (ja) * 1998-08-07 2000-02-25 Pioneer Electron Corp Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP2000124552A (ja) * 1998-10-16 2000-04-28 Agilent Technol Inc 窒化物半導体レーザ素子
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (fr) 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
US6829273B2 (en) 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
US6812502B1 (en) 1999-11-04 2004-11-02 Uni Light Technology Incorporation Flip-chip light-emitting device
US6534332B2 (en) 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
DE10141352A1 (de) * 2001-08-23 2003-06-05 Osram Opto Semiconductors Gmbh Verfahren zur Oberflächenbehandlung eines Halbleiters
TW563261B (en) * 2002-06-07 2003-11-21 Solidlite Corp A method and of manufacture for tri-color white LED
JP2008141187A (ja) * 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2778405B2 (ja) * 1993-03-12 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3761589B2 (ja) * 1993-03-26 2006-03-29 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子

Also Published As

Publication number Publication date
DE69503299T2 (de) 1999-01-21
US5583879A (en) 1996-12-10
EP0678945A1 (de) 1995-10-25
EP0678945B1 (de) 1998-07-08

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation