DE69434363D1 - Abtastbelichtungsvorrichtung - Google Patents

Abtastbelichtungsvorrichtung

Info

Publication number
DE69434363D1
DE69434363D1 DE69434363T DE69434363T DE69434363D1 DE 69434363 D1 DE69434363 D1 DE 69434363D1 DE 69434363 T DE69434363 T DE 69434363T DE 69434363 T DE69434363 T DE 69434363T DE 69434363 D1 DE69434363 D1 DE 69434363D1
Authority
DE
Germany
Prior art keywords
scanning exposure
exposure
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69434363T
Other languages
English (en)
Other versions
DE69434363T2 (de
Inventor
Susumu Makinouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE69434363D1 publication Critical patent/DE69434363D1/de
Application granted granted Critical
Publication of DE69434363T2 publication Critical patent/DE69434363T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69434363T 1993-07-14 1994-07-13 Abtastbelichtungsvorrichtung Expired - Lifetime DE69434363T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17416193A JP3282751B2 (ja) 1993-07-14 1993-07-14 走査型露光装置、及び該装置を用いる素子製造方法
JP17416193 1993-07-14

Publications (2)

Publication Number Publication Date
DE69434363D1 true DE69434363D1 (de) 2005-06-16
DE69434363T2 DE69434363T2 (de) 2005-10-06

Family

ID=15973769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69434363T Expired - Lifetime DE69434363T2 (de) 1993-07-14 1994-07-13 Abtastbelichtungsvorrichtung

Country Status (4)

Country Link
EP (1) EP0634700B1 (de)
JP (1) JP3282751B2 (de)
KR (2) KR100308326B1 (de)
DE (1) DE69434363T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293459A (ja) 1995-04-21 1996-11-05 Nikon Corp ステージ駆動制御方法及びその装置
JP3815750B2 (ja) * 1995-10-09 2006-08-30 キヤノン株式会社 ステージ装置、ならびに前記ステージ装置を用いた露光装置およびデバイス製造方法
TW341719B (en) * 1996-03-01 1998-10-01 Canon Kk Surface position detecting method and scanning exposure method using the same
WO1997033204A1 (en) * 1996-03-04 1997-09-12 Asm Lithography B.V. Lithopraphic apparatus for step-and-scan imaging of a mask pattern
KR19980074072A (ko) * 1996-04-04 1998-11-05 오노 시게오 위치 관리 방법 및 위치를 맞추는 방법
JP3659529B2 (ja) 1996-06-06 2005-06-15 キヤノン株式会社 露光装置およびデバイス製造方法
KR100483982B1 (ko) * 1996-06-07 2005-08-10 가부시키가이샤 니콘 진동절연장치및노광장치
JP3733174B2 (ja) * 1996-06-19 2006-01-11 キヤノン株式会社 走査型投影露光装置
US6490025B1 (en) 1997-03-17 2002-12-03 Nikon Corporation Exposure apparatus
EP0967525B1 (de) * 1998-06-23 2005-11-16 ASML Netherlands B.V. Lithographischer Projektionsapparat
TW394862B (en) 1998-06-23 2000-06-21 Asm Lithography Bv Lithographic projection apparatus
JP3745167B2 (ja) * 1998-07-29 2006-02-15 キヤノン株式会社 ステージ装置、露光装置およびデバイス製造方法ならびにステージ駆動方法
TWI242112B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Lithographic projection apparatus and method of operating a lithographic projection apparatus
EP1052550A3 (de) * 1999-04-19 2003-01-02 ASML Netherlands B.V. Anordnungen zum Antrieb einer Mehrzahl Trägerplatten und deren Anwendung in lithographischen Projektionsapparaten
US6690450B2 (en) * 2000-01-31 2004-02-10 Nikon Corporation Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device
JP2006203113A (ja) * 2005-01-24 2006-08-03 Nikon Corp ステージ装置、ステージ制御方法、露光装置及び方法、並びにデバイス製造方法
JP2006344685A (ja) 2005-06-07 2006-12-21 Canon Inc 露光装置
KR100734648B1 (ko) 2005-12-28 2007-07-02 동부일렉트로닉스 주식회사 얼라인유닛을 구비한 반도체 노광장치
US7352149B2 (en) * 2006-08-29 2008-04-01 Asml Netherlands B.V. Method for controlling the position of a movable object, a positioning system, and a lithographic apparatus
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
WO2013160082A1 (en) * 2012-04-27 2013-10-31 Asml Netherlands B.V. Lithographic apparatus
WO2014010233A1 (ja) * 2012-07-09 2014-01-16 株式会社ニコン 駆動システム及び駆動方法、並びに露光装置及び露光方法
JP5582267B1 (ja) * 2014-01-17 2014-09-03 株式会社東光高岳 連続走査型計測装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979195A (en) * 1988-09-22 1990-12-18 Fujitsu Limited Vertical stepper
JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JP3180301B2 (ja) * 1992-10-28 2001-06-25 株式会社ニコン 走査露光方法、走査型露光装置及び前記方法を使用するデバイス製造方法

Also Published As

Publication number Publication date
KR100308326B1 (ko) 2001-11-30
JP3282751B2 (ja) 2002-05-20
JPH0729801A (ja) 1995-01-31
KR100326830B1 (ko) 2002-03-04
DE69434363T2 (de) 2005-10-06
EP0634700B1 (de) 2005-05-11
EP0634700A1 (de) 1995-01-18
KR960015755A (ko) 1996-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition