TW394862B - Lithographic projection apparatus - Google Patents

Lithographic projection apparatus Download PDF

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Publication number
TW394862B
TW394862B TW088109912A TW88109912A TW394862B TW 394862 B TW394862 B TW 394862B TW 088109912 A TW088109912 A TW 088109912A TW 88109912 A TW88109912 A TW 88109912A TW 394862 B TW394862 B TW 394862B
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TW
Taiwan
Prior art keywords
photomask
instantaneous position
patent application
base table
substrate
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Application number
TW088109912A
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Chinese (zh)
Inventor
Hans Butler
Thomas P Hendricus Warmerdam
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Asm Lithography Bv
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Publication of TW394862B publication Critical patent/TW394862B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709Vibration, e.g. vibration detection, compensation, suppression or isolation

Abstract

A lithographic projection apparatus comprising: a radiation system for supplying a projection beam of radiation; a mask table provided with a mask holder for holding a mask; a substrate table provided with a substrate holder for holding a substrate; a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate; first driving means, for moving the mask table in a given reference direction substantially parallel to the plane of the table; second driving means, for moving the substrate table parallel to the reference direction so as to be synchronous with the motion of the mask table; the apparatus further comprising: first measuring means, for determining the momentary position of the mask table with respect to a fixed reference point; second measuring means, for determining the momentary position of the substrate table with respect to a fixed reference point, and means for comparing the measured momentary position of the substrate table with a desired momentary position of the substrate table, for generating a position error signal in accordance with a difference between the said two positions, and for passing that signal to correction means which serve to adjust the momentary position of the mask table so as to compensate for such difference. In a preferential embodiment, at least a portion of the position error signal is differentiated twice with respect to time before being passed to the correction means, thus providing the correction means with an acceleration error signal; this can then be used to directly effect the required correctional acceleration of the mask table.

Description

五、發明說明(1) 本發明關於一種微影投影裝置,其包含: • 一照射系統,用以供應一投影韓射束; •一光罩檯’其具備一光罩支架以支承一光罩; • 一基體檯’其具傷一基體支架以支承一基體; • 一投影系統’其用以將該光罩之一輻照部分映照在該基V. Description of the invention (1) The present invention relates to a lithographic projection device, which includes: • an illumination system for supplying a projection Korean beam; • a mask stage 'which is provided with a mask holder to support a mask ; A base table 'which has a base support to support a base; a projection system' which is used to reflect an irradiated portion of the photomask onto the base;

體之一標靶部分; A •第一驅動裝置,其用以使該光罩檯以一大致平行於該棱 平面之給定參考方向移動; •第二驅動裝置’其用以使該基體檯平行於該參考方向移 動以和該光罩檯之運動同步; 此類型之裝置舉例來說能用在積體電路(ICs)之製造中 。在此種案例中’光罩(標線)可含有相當於積體電路—單 /獨層1之電路圖案,然後此圖案能映照在已塗佈一層光敏材 21抗银劑)之基體(矽晶圓)標靶區(晶粒)上。一般而言, 個晶圓會含有完整之相鄰晶粒網絡,該等晶粒一次一 方^接續經過標線輻照。藉由在投射光束下以一給定參考 反7 (掃描方向)逐漸掃過標線圖案同時同步以平行或平行 ,於该掃描方向掃動晶圓檯而使每一晶粒受輻照,藉此 將輕昭择括m + , 、,、知線圖案之影像移轉至晶粒上。一般而言,由於該 4-A.旦_/ ^ ^ =糸統會有一放大因子Μ (通常Μ < 1 ),晶圓檯之掃動速 :a為小於標線檯掃動速度之因子Μ。更多關於此處所述 ~ίΰΙι·旦·/ 〇» w褒置之資訊能自世界專利申請案w〇 97/332 05號中得 知。 直到最近此類裝置為含有單一光罩檯及單一基體檯。俱A target part of the body; A • a first driving device for moving the photomask table in a given reference direction substantially parallel to the edge plane; • a second driving device 'for making the base table Move parallel to the reference direction to synchronize with the movement of the mask stage; this type of device can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the 'mask (marking line) may contain a circuit pattern equivalent to the integrated circuit-single / single layer 1, and then this pattern can be reflected on the substrate (silicon that has been coated with a layer of photosensitive material 21 anti-silver agent). Wafer) on the target area (die). Generally speaking, each wafer will contain a complete network of adjacent grains, and these grains will be irradiated one by one. By gradually sweeping the graticule pattern with a given reference inversion 7 (scanning direction) under the projected beam while simultaneously or in parallel or in parallel, scanning the wafer stage in the scanning direction to irradiate each die, thereby Transfer the images of lightly selected m +,,, and line patterns to the die. In general, since the 4-A. Den _ / ^ ^ = system will have an amplification factor M (usually M < 1), the scanning speed of the wafer table: a is a factor M smaller than the scanning speed of the reticle table. . More information on what is described here ~ ίΰι · Dan · / 〇 »can be found in World Patent Application No. WO 97/332 05. Until recently, such devices consisted of a single mask stage and a single substrate stage. all

第7頁Page 7

I 五、發明說明(2) 現在已有具備至少兩個獨立可動基體檯之機器 專利申請案W0 98/28665號和W0 98/4〇791號中 世界 裝置。此種多層裝置背後之基本運作原理^ =多層 體檯位在投影系統下方以讓位在該檯上之二第§二以〜基 到;第-基體曝光完成時將該新基體送;該;:然 統:方:曝光位置,然後在此重複循環進行 ::糸 ,有可迠達到實質增加之機器生此方式 機器之成本問題。 如此曰改善擁有該 ,影裝置可利用各類型投影 Π;置x V離子束或電子束。投影系統=用:、類遠 性或反射折射性1; Π;:例來說可為折射性、反射 t ^ ^ < μ # Λ Λ%Λ^/ ° ^ ^ ^ ^ ^ 置可具有_個 之:=匕、空。如刖—段所述,該裝 上日日囫檯及/或光罩檯。 裝置製造之積體電路和豆他穿 a 次微米圖案之複製鱼 &八他裝置通㊉涉及極細微 -—:i, : (0 " -- 、工機械衝擊等適 ':罩檯:雜散運動 體系、氣塾座、動態平衡重物;阻 成此目的,這此击 匕益等方案逵 機械性影響隔置之關鍵部分與最為負面 然而這些方案對排除某些負面影響並非I. V. Description of the Invention (2) There are now machines with at least two independent movable base tables. Patent applications Nos. WO 98/28665 and WO 98 / 4〇791. The basic operating principle behind this multilayer device ^ = The multilayer body is positioned below the projection system to give way to the second one of the second § to ~ the base; the new base is sent when the base is exposed; the; : Ran Tong: Fang: Exposure position, and then repeat the cycle here:: 糸, there are machines that can achieve a substantial increase in the cost of machines in this way. With this improvement, the shadow device can use various types of projections, such as an x V ion beam or an electron beam. Projection system = Using :, quasi-reflection, or reflective refraction 1; Π ;: For example, it can be refractive, reflective t ^ ^ < μ # Λ Λ% Λ ^ / ° ^ ^ ^ ^ ^ Of these: = dagger, empty. As described in paragraph 刖, the sundial and / or reticle stage should be installed. The integrated circuit of the device manufacturing and the replicating fish of the sub-micron pattern worn by the device & other devices generally involve very subtle--: i,: (0 "-, mechanical and mechanical impact, etc.): cover: Stray motion systems, airlocks, dynamic balancing weights; for this purpose, the schemes such as this attack will mechanically affect the key parts of the isolation and the most negative. However, these schemes are not intended to exclude certain negative effects.

第8頁 五、發明說明(3) 完全有效,例如: 1. 光罩支承裝置(機械臂)所造成之振動; 2. 標線遮蓋葉片運動所造成之振動; 3. 因出現空氣淋射所造成之共振效應; 4. 因光罩檯運動所造成之基體檯内振動,反之亦是如此。 雖然以上效應比較上均屬小規模,在但生產更高裝置解 析度之需求增加時會變得日益要緊,且現在對臨界尺寸在 0.15微米或更小量級之大面積積體電路之實際實行構成實 質障礙。 本發明之一目的為減輕此問題。更明確地說,本發明之 一目的為提出一種步進掃描(step-and-scan)微影投影裝 置,該裝置中降低前述擾動效應。更明確地說,本發明之 一目的為該裝置應含有抵消因此種擾動產生之基體檯與光 罩檯間不同步運動。 以上及其他目的在前段文章所說明之裝置内達成,該裝 置之特徵尚包含: -第一測量裝置,其用以決定該光罩檯相對於一固定參考 點之瞬時位置; - 第二測量裝置,其用以決定該基體檯相對於一固定參考 點之瞬時位置;及 - 比較所測得基體檯瞬時位置與所要基體檯瞬時位置(設 定點)之裝置,其依據此二位置間之差異產生一位置誤差 信號,且將該信號送至校正裝置,該校正裝置調整該光罩 檯之瞬時位置以補償該誤差。5. Explanation of the invention (3) It is completely effective, for example: 1. Vibration caused by the mask supporting device (mechanical arm); 2. Marking lines cover the vibration caused by the movement of the blade; 3. Due to air spray The resonance effect caused; 4. Vibration in the base table caused by the movement of the mask table, and vice versa. Although the above effects are relatively small in scale, it will become increasingly important as the demand for higher device resolution increases, and the practical implementation of large-area integrated circuits with critical dimensions of 0.15 microns or less Constitute a substantial obstacle. It is an object of the present invention to alleviate this problem. More specifically, it is an object of the present invention to provide a step-and-scan lithographic projection device in which the aforementioned disturbance effect is reduced. More specifically, it is an object of the present invention that the device should include an asynchronous movement between the base table and the photomask table that counteracts such disturbances. The above and other objectives are achieved in the device described in the previous paragraph. The features of the device also include:-a first measuring device, which is used to determine the instantaneous position of the mask stage relative to a fixed reference point;-a second measuring device , Which is used to determine the instantaneous position of the base table relative to a fixed reference point; and-a device for comparing the measured instantaneous position of the base table with the desired instantaneous position (set point) of the base table, which is generated based on the difference between the two positions A position error signal is sent to the correction device, and the correction device adjusts the instantaneous position of the mask stage to compensate the error.

五、發明說明(4) 本發明在深刻理解後發現到前述擾動大致上無法僅利用 微影裝置結構性修改即將其去除,僅有之實務性解決辦法 為利用以控制學(Control Theory)為基礎之方案。在產生 本發明前之實驗中,發明人試圖利用第二測量裝置量化基 -體檯内词服誤差(以比較基體檯之測量位置和預期位置之 方式)並使用一連至第二驅動裝置之反饋迴路反覆去除此 種誤差以校正此種誤差。然而,雖然此方案產生某種程度 之改進,但並無法去除所有負面擾動;進一步之分析顯示 利用此處理方案並未合乎要求減弱特徵頻率約2〇〇赫茲級 j動,但在低頻擾動(例如2〇至8〇赫兹)確實展現出減弱今 發明 檯内負 於光罩 前者之 ,但在 等於基 無論 案係以 體擾可 完全排 整試圖 用此方 在依 面擾動效應之想法而將 之構造大體上較基體 /、振彳§ 5虎特徵會較後者 頻率約為200赫茲級時 體檯内之擾動振幅。 如何,發明人將其目光 放大率1(通常m=i/4 見之光罩檯擾動量會大 除負面擾動,不如痄另 補償任何殘餘.擾動,本 案之實驗產生優異成果 據本發明裝置之—特殊 人在面對此問題之新方案中拋棄試圖完全去除基體 注意力移轉到光罩檯上。由 檯不複雜且較輕量,預料中 簡單。實驗證明此假設為實 光罩檯内之擾動振幅大致 轉向下一問題,由於光罩圖 或175)投影在基體上,自基 幅減輕。與其嘗試將基體檯 一種選擇利用適當光罩檯調‘ 發明由此構想而成。隨後使 〇 實施例中,能利用第一測量 五、發明說明(5) --- -- ^置量化光罩檯位置誤差(以比較光罩檯之測量位置和預 ,位置之方式)並使用一連至第一驅動裝置之反饋迴路反 覆減輕此種誤差以克服此種誤差。 =段文章中所討論之有瑕疵實施例能成立係因為此依光 反,迴路之頻寬通常約為15〇至175赫茲級,其低於該 内最為持久擾動之特徵頻率範圍175至225赫茲,·因此 動右罩檯反饋迴路之輸入提供後-頻率範圍内之擾 據本;Ξ萝ί法完美克服此擾動。為避免發生此問題,依 據本發明裝置之一較佳實施 ^依 誤差信號在送至該校正裝置 =^為至〉、有一部分位置 校正裝置提供一加速度誤差嗲。’ 4微分兩次,藉此對該 至第一驅動裝置而非供予光ϋ 2後此信號能直接饋送 由將加速度誤差乘上光軍檯 ::路之輸入;吾人藉 位置所須之力量。 里即此立刻得知校正光罩檯 、:據本發明裝置之另一實施例 差#唬經由一超前_滯後濾波器送 ’、、V —部分位置誤 用以補償補償裝置内之任何固 \正裝置,該濾波器 確保由光罩檯調整產生之補償不奋二=性(延時)。此方案 誤差至使該裝置之影像定位精確二隊後基體檯内原始伺服 根據前段文章所討論内容,應;度。 誤差信號送到校正裝置亦有助於=至丨使用光纖鏈結將該 。 低負面系統滯後之發生 在前述實施例之一特殊改進案中 被調整為在位置誤差具有最振^該超前-滯後濾波器 田之頻譜部分内產生最佳 五、發明說明(6) 效能。在一特定實例中’該濾波器實施為在丨75至225赫茲 之範圍内有最佳效能。 在依據本發明裝置之另一實施例中,利用第二測量裝置 (、比較基體檯之測量位置和預期位置)量化基體檯之位置誤 差,且使用接至第二驅動裝置之反饋迴路反覆減輕此種碍 差。此方案與基本發明方法—同作用以協助降低光罩檯和 基體檯相對位置之不正痛。 ' 在前文中,基體檯及/或光罩檯之所要瞬時位置(設定點 )舉例來說可由一(軟體)設定點產生器取得,該設定點產 生器對此二檯之所要/受命同步運動產生一(數學)圖形。 在此,I解相對於基體檯受測位置之固定參考點和相對於 ,罩檯又測位置之固定參考點可為相同或不同,視選擇而 疋 ° —ίΓ”關於—種裝置製造方法,其包含以下步驟: ^ . 土體,该基體至少局部受—層對輻射敏感材料覆 斋 , 光罩,該光罩含有一圖案; 提供 戶束將至少部分該光罩圖案投射成像在該 層對軚射破感材料之—標靶區域上。 依據本發明,此方法之特徵為: _ δ玄光罩支承於一杏罢 置使該光罩檯以一平〜至二〜光罩檯連接至第一驅動裝 -該基體支承於一基之給定參考方向移動; 置使該基體檯—平行“參考;連接至第二驅動裝 j移動以便於和該光罩檯V. Description of the invention (4) After a deep understanding of the present invention, it is found that the aforementioned disturbances can not be removed by structural modification of the lithography device. The only practical solution is to use Control Theory as the basis. The scheme. In the experiments before the invention, the inventor tried to use the second measuring device to quantify the grammatical error in the base-body table (by comparing the measured position and expected position of the base table) and used a feedback connected to the second driving device The loop repeatedly removes this error to correct it. However, although this scheme has improved to some extent, it cannot remove all negative disturbances; further analysis shows that using this processing scheme does not meet the requirements to reduce the characteristic frequency of about 200 Hz, but at low frequencies (such as (20 to 80 Hz) does show a reduction of the former in the present invention, which is negative to the photomask, but it is completely rectified by body disturbance regardless of the case. Attempting to use this method in the face-to-face disturbance effect idea The structure is generally higher than that of the base body, and the characteristics of the tiger will be higher than the latter when the frequency is about 200 Hz. How, the inventor's eye magnification 1 (usually m = i / 4 sees the amount of disturbance of the mask stage will greatly eliminate the negative disturbance, it is better to compensate for any residual. The disturbance, the experiment in this case produces excellent results. According to the device of the present invention — Special people in the new solution to this problem abandoned the attempt to completely remove the substrate and shifted the attention to the mask stage. The stage is not complicated and lightweight, and it is expected to be simple. Experiments have proven that this assumption is inside the real mask stage The amplitude of the perturbation is generally turned to the next problem, because the photomask or 175) is projected on the substrate, which is reduced from the base amplitude. Rather than trying to tune the base table as an option, the invention is conceived. Then, in the embodiment, the first measurement can be used. 5. Description of the invention (5) ----^ Quantize the position error of the mask stage (by comparing the measurement position and the position of the mask stage) and use A feedback loop connected to the first driving device repeatedly mitigates such errors to overcome such errors. = The defective embodiment discussed in the paragraph can be established because of this, depending on the light reflection, the bandwidth of the loop is usually about 150 to 175 Hz, which is lower than the characteristic frequency range of 175 to 225 Hz for the most persistent disturbances. Therefore, the input of the feedback loop of the moving right hood provides the disturbance data in the post-frequency range; the method can perfectly overcome this disturbance. In order to avoid this problem, according to a preferred implementation of the device of the present invention, the error signal is sent to the correction device, and a part of the position correction device provides an acceleration error. '4 Differential twice, so that the first drive device is not supplied to the light. After 2 this signal can be directly fed by multiplying the acceleration error to the light army platform :: the input of the road; we borrow the power required by the position . Here I immediately learned that the correction mask stage, according to another embodiment of the device of the present invention, is ## sent via a lead_lag filter ', V — part of the position error is used to compensate any fixed Device, the filter ensures that the compensation produced by the adjustment of the mask stage is non-existent (delayed). This solution is so accurate that the image positioning of the device is accurate. The original servo in the base station after the second team should be based on the content discussed in the previous paragraph. The error signal is also sent to the correction device. Occurrence of low negative system lag In a special improvement of one of the foregoing embodiments, it was adjusted to produce the best within the spectrum portion of the lead-lag filter field where the position error has the most. 5. Description of the Invention (6) Efficiency. In a particular example, the filter is implemented to have optimal performance in the range of 75 to 225 Hz. In another embodiment of the device according to the present invention, a second measuring device (comparing the measured position and the expected position of the base table) is used to quantify the position error of the base table, and a feedback loop connected to the second drive device is used to mitigate this repeatedly. Kind of hindrance. This solution works in tandem with the basic inventive method to help reduce the uncomfortable pain of the relative positions of the photomask table and the base table. '' In the foregoing, the desired instantaneous position (set point) of the base table and / or the mask table can be obtained, for example, by a (software) set point generator, which sets / desired synchronized movements of the two sets Generate a (mathematical) graph. Here, the fixed reference point of the I solution relative to the measured position of the base table and the fixed reference point of the measured position of the cover table may be the same or different. Depending on the choice, 疋 ° —ίΓ ”about a device manufacturing method, It includes the following steps: ^. The soil body, the substrate is at least partially covered by a layer of radiation-sensitive material, a photomask, the photomask contains a pattern; providing a household beam to project and image at least part of the photomask pattern on the layer軚 Shoot the sensible material—on the target area. According to the present invention, the method is characterized by: _ δ mysterious mask is supported by an apricot, so that the mask stage is connected to the first mask stage from one level to two. Drive device-the base is supported on a base to move in a given reference direction; set the base table-parallel "reference; connected to a second drive device to move with the mask stage

第12頁 1 五、發明說明(7) 之運動同步; -利用第一測量裝置決定該光罩檯相 瞬時位置; 於固疋參考點之 -=用第H裝置決定該基體檯相對於 瞬時位置; ^可點之 -利用一裝置比較該基體檯之測量後瞬 位置,依據此二位置間之差異產生—仂罢1 要瞬時 位置誤差信號,曰碑 該信號送至用以調整該光罩檯瞬時位置 , 誤差。 τ1罝枝正裝置从補償該 在一使用依據本發明微影投影裝置之製 * ^内之圖案映照在一基體上,該基體至》層= 1敏感材料(抗蝕劑)覆蓋。在此映照步驟之前,該基體 經過各種處理,例如上底漆(priming)、塗佈抗蝕劑^和軟 烘(s 0 f t b a k e)。基體在曝光後可能經過其他處理,例如 後曝光供烤(post-exposure bake,PEB)、顯像、硬供 (hard bake)及成像後圖案測量/檢驗。此系列處理過程係 作為對一裝置(如積體電路)之單獨層形成圖案之基礎。然 後該有圖案層經過各種處理,例如蝕刻、離子植入(摻雜) 、金屬化處理、氧化處理、化學機械研磨處理等,所有、程 序均要將一單獨層磨掉。若要求有數層,則必須將整個程 序或其變異對每一新層重複。最後會在基體(晶圓)上出現 一系列裝置。然後以切粒或分鋸方式使該等裝置各自分開 ’單獨裝置自此可安裝到載體上或連接之插腳等。更多關 於此種程序之資訊舉例來說可參見McGraw Hi u出版公司Page 12 1 V. Explanation of the invention (7) Motion synchronization;-Use the first measurement device to determine the instantaneous position of the photomask stage; At the fixed reference point-= Use the Hth device to determine the instantaneous position of the base table ^ Can be clicked-use a device to compare the instantaneous position of the base table after measurement, and generate it based on the difference between the two positions-仂 1 1 For the instantaneous position error signal, say that the signal is sent to adjust the mask table Instantaneous position, error. The τ1 device is compensated for the pattern in a photolithographic projection device according to the present invention. The pattern is reflected on a substrate, and the substrate is covered by a sensitive material (resist). Prior to this mapping step, the substrate is subjected to various treatments, such as priming, resist coating, and soft baking (s 0 f t b a k e). The substrate may undergo other treatments after exposure, such as post-exposure bake (PEB), imaging, hard bake, and pattern measurement / inspection after imaging. This series of processes serves as the basis for patterning the individual layers of a device, such as an integrated circuit. Then, the patterned layer is subjected to various processes, such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc. All of the procedures need to grind a separate layer. If several layers are required, the entire program or its variation must be repeated for each new layer. Finally, a series of devices appear on the substrate (wafer). These devices are then separated by pelletizing or dividing saws. ′ Individual devices can then be mounted on a carrier or connected pins, etc. More information on this process can be found, for example, in McGraw Hi u Publishing

第13頁 五、發明說明(8) 所出版之''Microchip Fabrication: A Practical Guide to Semiconductor Processing” 一書,作者為Peter van Zani: ’ 1997 年第三版,ISBN 0-0 7-067250-4。 雖然前文已對依據本發明裝置在製造積體電路上之使用 作說明,但應了解到此種裝置具有許多其他可行用途。舉 例來說’其可用在整合光學系統、磁區記憶體用之導引及 檢測圖案、液晶顯示面板、薄膜磁頭等之製造中。習於此 技藝者會了解到在此類他種用途之内涵中,本文中所用之 字詞如、、標線,/ 、、、晶圓"或、、晶粒〃應考慮分別換作更 廣義字詞、、光罩"、、、基體,,和、、標靶區,,。 以下借助於範例性實施例和圖式進一步說明本發明及其 優點,圖式中: 圖1為一適合用在依據本發明裝置之控制學電路之簡略 再現; · 圖2綠出依據本發明裝置之—特殊實施例中之光罩檯和 基體檯頻率回應; 圖3勾勒一依據本發明裝置之整體簡圖。 f圖中對應部分由相同參考符號代表。 。圖會出用在依據本發明裝置内之校正電路特殊實施例 H 迴路代表光罩檯(或標線檯:RS),包含機械傳輪件 $ ^控制件GRS。底部迴路代表基體檯(或晶圓檯:WS),包 i 傳輸件H*S和控制件Gws。標線檯收到四倍之晶圓檯設 疋”’ P ’但其輸出僅計算相關WS/RS誤差之1/4。Page 13 V. Description of Invention (8) Book "Microchip Fabrication: A Practical Guide to Semiconductor Processing" by Peter van Zani: 'The third edition of 1997, ISBN 0-0 7-067250-4 Although the use of the device according to the present invention in the fabrication of integrated circuits has been described above, it should be understood that this device has many other possible uses. For example, 'it can be used to integrate optical systems, magnetic memory, etc. In the manufacture of guidance and detection patterns, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in this art will understand that in the connotation of these other uses, the words used in this article, such as,, marking, / ,, , Wafer, or chip should be considered to be replaced with more general terms, mask, substrate, and, and target areas, respectively. The following is an example embodiment and a diagram. The formula further illustrates the invention and its advantages. In the figure: Figure 1 is a simplified reproduction of a control circuit suitable for a device according to the invention; Figure 2 shows a photomask in a special embodiment of the device according to the invention Taiwan and Ji Station frequency response; Figure 3 outlines a general diagram of the device according to the present invention. F The corresponding parts in the figure are represented by the same reference symbols. The figure shows the special embodiment of the correction circuit used in the device according to the present invention. Table (or marking table: RS), including mechanical wheel parts $ ^ control part GRS. The bottom circuit represents the base table (or wafer table: WS), including the transmission part H * S and control part Gws. To four times the wafer table setting "'P', but its output only calculates 1/4 of the relevant WS / RS error.

五、發明說明(9) " "— - 除一低通濾波器HF (加上-4)將WS誤差effS饋送至RS之設定 點SPR外 雙重微分器D產生WS加速度誤差。藉由將此加 速度,上RS質量(m)會產生一額外力量,此力量施加於該 標線*檯時應使RS具備與ws相同之加速度。&亦可含有一超 月丨J -滯後組件以將在一特定頻率範圍内之饋送信號 (feedthrough)最佳化,此气分在實施例二中進一步說明 a 當該 擾動, 弱。藉 解決。 ,該RS 何額外 此種 即使具 在RS的 想狀態 在此 略有不 波器; 增益, 實施例 當使 在於較 力量施加於RS控制件自身時,其會將此力認為是一 η '、η對此反應並式圖將前饋(f e,e ^ f 〇 r w a r ^ )效應減 由額外對RS設定點饋送濾波後ws誤差,此問題得勤 ,在’若RS對該額外前饋力量反應為一傳輸1/ms2 誤差eRS維持為零且因此RS控制件、、並未察覺到"任 力量注入。 饋送彳§ $形式之主要優點在於其與RS之頻寬無關。 備,頻見’該額外力暈前饋產生所要RS回應。只有 動態脫離理想典範1/ms2時RS的回應才會變為非理 〇 註明為了實用用途起見,真實滹波器構造能選擇為 同。舉例來說’能利用具有相同分母多頊式之兩濾 在f案例中’僅有分子不同,該低通遽波器僅有一 該高通濾波器具有m· s2項。 一 用圖1所示饋送信號方法時,殘餘WS/RS誤差之主因 南頻之相位差。此相位滯後係因自誤羞至RS之路V. Description of the invention (9) " "--Except a low-pass filter HF (plus -4) feeds the WS error effS to the set point SPR of the RS. The double differentiator D generates a WS acceleration error. By accelerating this, the RS mass (m) will generate an extra force. When this force is applied to the marked line *, the RS should have the same acceleration as ws. & It may also contain a super-J-hysteresis component to optimize the feedthrough in a specific frequency range. This gas component is further explained in the second embodiment a. When the disturbance is weak. Resolved. What is the reason for this RS? Even if it is in the desired state of RS, there is a slight wave; gain, when the embodiment is caused by a relatively strong force applied to the RS control itself, it will consider this force to be a η ', η reacts to this response and plots the feedforward (fe, e ^ f 〇rwar ^) effect by subtracting the ws error after additional filtering on the RS setpoint feed. This problem can be solved, in 'If RS reacts to this additional feedforward force For a transmission of 1 / ms2, the error eRS is kept at zero and therefore the RS controller does not notice the "injection of power". The main advantage of the feed 彳 § $ form is that it has nothing to do with the bandwidth of RS. Ready, it ’s common to see that this extra force halo feedforward produces the desired RS response. Only when the dynamic response deviates from the ideal model 1 / ms2 will the response of the RS become irrational. ○ Note that for practical purposes, the real wave filter structure can be chosen the same. For example, ‘two filters with the same denominator polymorphism can be used. In the case of f’, only the numerator is different, and the low-pass filter has only one. The high-pass filter has m · s2 terms. When using the feed signal method shown in Figure 1, the main cause of the residual WS / RS error is the phase difference of the South frequency. This phase lag is due to the road from self-shock to RS

第15頁 五、發明說明(10) 徑内之剩餘遲滯造成 圖2顯示WS位置誤差之頻譜(頂線 之頻譜(,!·人右了¥治+ IT、 Y 0丨见1 #是除' Μ四 貝曰"σ在頂線之下)、及WS級之淨誤差頻譜(底鎞、 正交方向Χ(頂圖)和γ(底圖)定義s . , y νλ 方向。皮羋鉍也主„, & y疋我仏之千面,其中Y為掃描 乘上i。-。如圖中所示,R :f直上由之數字要 跟著WS。特別是在低頻日夺 :則相當精確 差量。然而對m至225赫兹間之== =在振幅方面配合的相當好,但殘餘誤;;=與 ΐΐκΙΓΛ向内特別明顯。此淨誤差加大係肇因於ws誤。 差與R S反應間之相位差。 ' w 6 藉由添加一超前—滞後濾波器降低相 誤差。在進行各種最佳化循環之 文,之淨 低)’在175赫兹具備零頻率且在2〇5赫兹具備—二里: frequency)。 τ上領(pole 口 j表列出利用此一濾波器獲得之淨WS/RS誤差量 盗行),以及與利用圖1所述方案獲得成果(、、/慮/皮 和未應用本發明所得之未經處理結果(、、未校正〃峪仃) 較。MA和MSD分別為移動平均數和移動標準差。仃)旦之比 單位均為毫微米,且引用前段述及之χ方向和γ方向^。置之 未校正 迴路 濾波器 ΜΑ X 11.4 1.4 1.0 MSD X 1 4. 9 7. 9 6.9Page 15 V. Description of the invention (10) The remaining hysteresis in the radius causes the spectrum of the WS position error (the spectrum of the top line (,!), The right one is ruled + IT, Y 0, see 1 #is divided ' The M Sibei " σ is below the top line), and the net error spectrum of the WS level (bottom 鎞, orthogonal directions X (top) and γ (bottom)) define s., Y νλ directions. Pi bismuth Also, „, & y, 疋, 仏, Y, Y, and Y, where Y is the scan multiplied by i.-. As shown in the figure, the number of R: f straight up must follow WS. Especially in low-frequency sun: it is quite Exact difference. However, for m = 225 Hz, == = works well in amplitude, but residual errors; = is particularly obvious inward with ΐΐκΙΓΛ. This increase in net error is due to ws errors. Phase difference between RS responses. 'W 6 Reduces phase error by adding a lead-lag filter. After performing various optimization cycles, the net low)' has a zero frequency at 175 Hz and a frequency of 2.5 Hertz has-2 li: frequency). Τ upper collar (the table of pole J lists the net WS / RS error stolen obtained by using this filter), and the use of Figure 1 The results obtained by the scheme (,, / / / skin and unprocessed results (,, uncorrected) obtained without applying the present invention. MA and MSD are moving average and moving standard deviation, respectively. 仃) denier The ratio units are all nanometers, and the χ and γ directions mentioned in the previous paragraph are cited. The uncorrected loop filter MA X 11.4 1.4 1.0 MSD X 1 4. 9 7. 9 6.9

第16頁Page 16

五、發明說明(11)ΜΑ Y MSD Y 4. 322. 1. 6 15. 1. 9. 實施例三 圖3勾勒一依據本發明微影投影裝置之透視簡圖。該裝 置包含: 照射系統7,用以供應一投影輻射束33 (例如紫外線、 遠紫外線、X光或帶電粒子束); -光罩檯5,其具備-光罩支架27以支承一光罩29(例如 一標線),V. Description of the invention (11) MAY MSD Y 4. 322. 1. 6 15. 1. 9. Embodiment 3 FIG. 3 outlines a schematic perspective view of a lithographic projection device according to the present invention. The device comprises: an illumination system 7 for supplying a projection radiation beam 33 (such as ultraviolet, far ultraviolet, X-ray or charged particle beams); a photomask stage 5 having a photomask holder 27 to support a photomask 29 (Such as a graticule).

-基體檯1,其具備-基體支Μ 7以支承 一塗佈抗蝕劑矽晶圓); M i V 帶 映 如本 投影 光罩 昭 帶電 器内 束33 所激 該 光罩 -投影系統3Γ例如-透鏡或折反射系統、鏡面❹、或 5 Ϊ Γ f Ϊ糸統)’其用以將該光罩29之-輻照部分 Α、、在该基體1 9之一標靶部分3 5 (晶粒)上; 文所述,該裝置為透射性 系統。然而該裝置亦含有一透射性光罩及 及/或投影系統。為反射性’例如具備-反射性 射系統7包含一光源9[例如一水銀燈或 粒子源(如熱離子陰極)、 锉刀子雷射、 電子束路徑提供之波纹# f =圍儲存裱或同步加速 。該輻射束33經過各個照明體丨丨、13 產生—輻射 勵之韓射束25就其橫截面大致為準直片使系統7 後攔截一標線29,該標線支承 支水27上。藉由第一驅動裝置31 之 +罩檯5能-Substrate table 1, which includes-Substrate support M7 to support a resist-coated silicon wafer); M i V bands are mirrored by the inner beam 33 of the projection mask and the tape-projection system 3Γ For example-a lens or a refracting system, a mirror surface, or a 5 Ϊ Γ f system), which is used to irradiate the reticle 29-the irradiated portion A, the target portion 3 5 of one of the substrates 19 ( Die); as described herein, the device is a transmissive system. However, the device also contains a transmissive mask and / or a projection system. For reflection ', for example, equipped with-the reflective radiation system 7 contains a light source 9 [for example, a mercury lamp or a particle source (such as a thermionic cathode), a file laser, a ripple provided by the electron beam path # f = enclosure storage or synchronous acceleration . The radiation beam 33 is generated by each of the illuminating bodies 13 and 13-the radiant excited Korean beam 25 is approximately collimated in cross section so that the system 7 intercepts a marking 29 that supports the branch 27. With the first driving device 31 +

第17頁 五、發明說明(12) /σΥ方向(習稱之掃描方向)精確來回移動。 過標線29後通過-投影系統3,該系統將輻射 n、、在晶圓19之晶粒35上。藉由第二驅動裝置21之身: 二,基體棱1亦能沿γ*向(掃描*向)精確來回。2 W亦^在X方向内來回移動,且額外具有其他 基體 在掃描期間,標線檯5以速度v沿掃描 :。 投影束掃過-標線影像。在此㈣,基體^移動疋以讓 沿相同或相反方向移動,其中M為投 =/迷度 4或丨川。依此方式讓較大晶=Λ 通 η 犧牲解析度。 又到曝先而無須 —^發明利此種構造以協助確保光罩檯 貫施例一所說明確實同步掃描運動。 基體相r 1能如Page 17 V. Description of the invention (12) / σΥ direction (known as the scanning direction) moves back and forth accurately. After passing the marking line 29, it passes through the -projection system 3, which will radiate n, on the die 35 of the wafer 19. With the body of the second driving device 21: Second, the base edge 1 can also go back and forth accurately in the γ * direction (scanning * direction). 2 W also moves back and forth in the X direction, and additionally has other substrates. During scanning, the reticle 5 scans at a speed v:. The projected beam sweeps through the graticule image. Here, the substrate ^ moves 让 to move in the same or opposite direction, where M is cast = / 迷 度 4 or 丨 川. In this way let larger crystals = Λ through η sacrifice resolution. It is not necessary to bring it to the first place. ^ This invention is used to help ensure that the mask stage does exactly the same as the scanning movement described in the first embodiment. Matrix phase r 1 can be

第18頁 1Page 18 1

Claims (1)

_案號88109912_年月曰i 修正,:;Ή.Ί 六、申請專利範圍 1. 一種微影投影裝置,其包含: • 一照射系統,用以供應一投影輻射束; • 一光罩檯,其具備一光罩支架以支承一光罩; • 一基體檯,其具備一基體支架以支承一基體; • 一投影系統,其用以將該光罩之一輻照部分映照在 該基體之一標靶部分; • 第一驅動裝置,其用以使該光罩檯以一大致平行於 該檯平面之給定參考方向移動; • 第二驅動裝置,其用以使該基體檯平行於該參考方 向移動以和該光罩檯之運動同步; 其特徵在於該裝置尚包含: -第一測量裝置,其用以決定該光罩檯相對於一固定參 考點之瞬時位置; -第二測量裝置,其用以決定該基體檯相對於一固定參 考點之瞬時位置;及 - 比較所測得基體檯瞬時位置與所要基體檯瞬時位置之 裝置,其依據此二位置間之差異產生一位置誤差信號,且 將該信號送至校正裝置,該校正裝置調整該光罩檯之瞬時 位置以補償該誤差。 2. 如申請專利範圍第1項之裝置,其特徵在於該位置誤 差信號至少有一部分在送至該校正裝置前對時間微分兩次 ,藉此對該校正裝置提供一加速度誤差信號。 3. 如申請專利範圍第1項之裝置,其特徵在於該位置誤 差信號至少有一部分經由一超前-滯後濾波器送至校正裝_Case No. 88109912_ I am revised,:; Ή.Ί 6. Scope of patent application 1. A lithographic projection device comprising: • an illumination system for supplying a projection radiation beam; • a mask stage It has a photomask support to support a photomask; • a base table that has a base support to support a substrate; • a projection system for reflecting an irradiated part of the photomask on the substrate A target part; • a first driving device for moving the photomask table in a given reference direction substantially parallel to the plane of the table; • a second driving device for making the base table parallel to the The reference direction moves to synchronize with the movement of the mask stage; it is characterized in that the device further comprises:-a first measuring device for determining the instantaneous position of the mask stage relative to a fixed reference point;-a second measuring device , Which is used to determine the instantaneous position of the base table relative to a fixed reference point; and-a device that compares the measured instantaneous position of the base table with the desired instantaneous position of the base table, and generates a based on the difference between the two positions Position error signal and the signal supplied to the correcting means, the correction means for adjusting the instantaneous position of the reticle stage to compensate for the error. 2. The device according to item 1 of the patent application is characterized in that at least a part of the position error signal is differentiated twice before being sent to the correction device, thereby providing an acceleration error signal to the correction device. 3. For the device in the scope of patent application, the characteristic is that at least part of the position error signal is sent to the correction device through a lead-lag filter. O:\58\58908.ptc 第1頁 2000.04.01.019 _案號88109912_年月曰i 修正,:;Ή.Ί 六、申請專利範圍 1. 一種微影投影裝置,其包含: • 一照射系統,用以供應一投影輻射束; • 一光罩檯,其具備一光罩支架以支承一光罩; • 一基體檯,其具備一基體支架以支承一基體; • 一投影系統,其用以將該光罩之一輻照部分映照在 該基體之一標靶部分; • 第一驅動裝置,其用以使該光罩檯以一大致平行於 該檯平面之給定參考方向移動; • 第二驅動裝置,其用以使該基體檯平行於該參考方 向移動以和該光罩檯之運動同步; 其特徵在於該裝置尚包含: -第一測量裝置,其用以決定該光罩檯相對於一固定參 考點之瞬時位置; -第二測量裝置,其用以決定該基體檯相對於一固定參 考點之瞬時位置;及 - 比較所測得基體檯瞬時位置與所要基體檯瞬時位置之 裝置,其依據此二位置間之差異產生一位置誤差信號,且 將該信號送至校正裝置,該校正裝置調整該光罩檯之瞬時 位置以補償該誤差。 2. 如申請專利範圍第1項之裝置,其特徵在於該位置誤 差信號至少有一部分在送至該校正裝置前對時間微分兩次 ,藉此對該校正裝置提供一加速度誤差信號。 3. 如申請專利範圍第1項之裝置,其特徵在於該位置誤 差信號至少有一部分經由一超前-滯後濾波器送至校正裝O: \ 58 \ 58908.ptc Page 1 2000.04.01.019 _Case No. 88109912_ year i correction,:; Ή.Ί VI. Patent application scope 1. A lithographic projection device, which includes: • an illumination system For supplying a projection radiation beam; • a photomask table provided with a photomask support to support a photomask; • a base table provided with a base support to support a substrate; • a projection system used for An irradiated part of the photomask is reflected on a target part of the substrate; a first driving device for moving the photomask table in a given reference direction substantially parallel to a plane of the table; 2 driving devices for moving the base table parallel to the reference direction to synchronize with the movement of the photomask table; characterized in that the device also includes:-a first measuring device for determining the photomask table relative to Instantaneous position at a fixed reference point;-a second measuring device for determining the instantaneous position of the base table relative to a fixed reference point; and-a device for comparing the instantaneous position of the measured base table with the instantaneous position of the desired base table ,its Thus the difference between the two positions to produce a position error signal and the signal supplied to the correcting means, the correction means for adjusting the instantaneous position of the reticle stage to compensate for the error. 2. The device according to item 1 of the patent application is characterized in that at least a part of the position error signal is differentiated twice before being sent to the correction device, thereby providing an acceleration error signal to the correction device. 3. For the device in the scope of patent application, the characteristic is that at least part of the position error signal is sent to the correction device through a lead-lag filter. O:\58\58908.ptc 第1頁 2000.04.01.019 案號8810卯1? 六、申請專利範圍 ' 置,該濾波器用以補償補 4 ·如申請專利範圍第3 係調整為在該位置誤差信 生最佳效能。 5 .如申請專利範圍第3 係調整為在175至225赫兹 6 .如申請專利範圍第1 在於該裝置包含一第—比 測得光罩檯瞬時位置與戶斤 位置間之任何差異產生— 驅動裝置以調整該光罩接 7 ·如申請專利範圍第工 在於該裝置包含一第二比 測得基體檯瞬時位置與戶斤 位置間之任何差異產生— 驅動裝置以調整該基體擾 8. 如申請專利範圍第工 在於該位置誤差信號經由 9. 一種裝置製造方法 —k供一基體,該基體 覆蓋; -提供一光罩,該光罩 一利用一輻射投影束將 該層對輻射敏感材料之一O: \ 58 \ 58908.ptc Page 1 2000.04.01.019 Case No. 8810 卯 1? 6. The scope of the patent application is set, and the filter is used to compensate for the compensation. · If the third scope of the patent application scope is adjusted to the error information at this position Health best performance. 5. If the scope of patent application No. 3 is adjusted to 175 to 225 Hz 6. If the scope of patent application No. 1 lies in that the device contains a first-ratio measurement of any difference between the instantaneous position of the photomask stage and the position of the household weight—drive Device to adjust the mask connection 7 · If the scope of the patent application is that the device contains a second ratio to measure any difference between the instantaneous position of the base table and the position of the household weight — drive the device to adjust the base disturbance 8. If applied The scope of the patent is that the position error signal passes through 9. A device manufacturing method-k is provided for a substrate, the substrate is covered;-a photomask is provided, which uses a radiation projection beam to layer one of the layers to radiation-sensitive materials 償裝置内之任何固有時間慣性。 項之裝置,其特徵在於該濾波器 號具有最大振幅之頻譜部分内產 項之裝置’其特徵在於該遽波器 之頻率範圍内產生最佳效能。 至5項中任一項之裝置,其特徵 杈态,該第一比較器用以比較所 要瞬時位置,其依據光罩檯此二 第―信號’且將該信號送至第— 之瞬時位置並藉此減少該差異。 至5項中任一項之裝置,其特徵 較器,該第二比較器用以比較所 要瞬時位置,其依據基體檯此二 第二信號’且將該信號送至第二 之瞬時位置並藉此減少該差異。 ^5、項中任一項之裝置,其特徵 一光纖鏈結送至該校正裝置。 ,其包含以下步驟: 至〉、局部受一層對輻射敏感材料 含有一圖案; 至少部分該光罩圖案投射成像在 標靶區域上。Any inherent time inertia within the device. The device of the term is characterized in that the device of the term whose filter number has the largest amplitude in the spectrum portion is characterized in that it produces the best performance in the frequency range of the wave filter. The device according to any one of items 5 to 5, characterized in that the first comparator is used to compare a desired instantaneous position, which is based on the second "signal" of the photomask stage and sends the signal to the instantaneous position of the first-and borrows This reduces the difference. The device according to any one of items 5 to 5, which has a characteristic comparator, and the second comparator is used to compare the desired instantaneous position, which is based on the two second signals of the base table and sends the signal to the second instantaneous position and thereby Reduce this difference. ^ 5. The device of any one of the items, characterized in that an optical fiber link is sent to the correction device. , Which includes the following steps: to>, a layer partially exposed to radiation-sensitive material contains a pattern; at least part of the mask pattern is projected and imaged on the target area. O:\58\58908.ptcO: \ 58 \ 58908.ptc $ 2頁 2000. 04. 01. 〇2〇 _案號88109912_年月曰 修正_' 六、申請專利範圍 其特徵在於: -該光罩支承於一光罩檯上,該光罩檯連接至第一驅動 裝置使該光罩檯以一平行於該檯平面之給定參考方向移動 -該基體支承於一基體檯上,該基體檯連接至第二驅動 裝置使該基體檯一平行於該參考方向移動以便於和該光罩 檯之運動同步; -利用第一測量裝置決定該光罩檯相對於一固定參考點 之瞬時位置; -利用第二測量裝置決定該基體檯相對於一固定參考點 之瞬時位置; -利用一裝置比較該基體檯之測量後瞬時位置和所要瞬 時位置,依據此二位置間之差異產生一位置誤差信號,且 將該信號送至用以調整該光罩檯瞬時位置校正裝置以補償 該誤差。 10. —種裝置,其依據申請專利範圍第9項之方法製造$ 2 pages 2000. 04. 01. 〇2〇_Case No. 88109912_Amendment of the year of the year_ 'Patent application scope is characterized by:-The photomask is supported on a photomask table, the photomask table is connected to The first driving device moves the photomask table in a given reference direction parallel to the plane of the table-the base is supported on a base table, the base table is connected to the second driving device so that the base table is parallel to the reference Directional movement so as to synchronize with the movement of the photomask table;-the first measurement device is used to determine the instantaneous position of the photomask table relative to a fixed reference point;-the second measurement device is used to determine the base table relative to a fixed reference point Instantaneous position;-using a device to compare the instantaneous position of the base table after measurement with the desired instantaneous position, generate a position error signal based on the difference between the two positions, and send the signal to adjust the instantaneous position of the photomask table The device is corrected to compensate for this error. 10. A device manufactured in accordance with the method of item 9 of the scope of patent application O:\58\58908.ptc 第3頁 2000. 04.01.021O: \ 58 \ 58908.ptc Page 3 2000. 04.01.021
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484305B (en) * 2010-11-22 2015-05-11 Asml Netherlands Bv A positioning system, a lithographic apparatus and a method for positional control

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1265104A1 (en) * 2001-06-06 2002-12-11 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7256866B2 (en) * 2004-10-12 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7505114B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7847919B2 (en) * 2007-03-29 2010-12-07 Asml Netherlands B.V. Lithographic apparatus having feedthrough control system
NL1036511A1 (en) * 2008-02-13 2009-08-14 Asml Netherlands Bv Movable support, position control system, lithographic apparatus and method of controlling a position or an exchangeable object.
JP5319167B2 (en) * 2008-06-06 2013-10-16 株式会社ミツトヨ Control device
US10175587B2 (en) 2013-12-20 2019-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG11201908803XA (en) 2017-04-11 2019-10-30 Asml Netherlands Bv Lithographic apparatus and cooling method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464030A (en) * 1982-03-26 1984-08-07 Rca Corporation Dynamic accuracy X-Y positioning table for use in a high precision light-spot writing system
JPH06151274A (en) * 1992-11-11 1994-05-31 Hitachi Ltd Method and device for positioning semiconductor integrated circuit pattern
JP3282751B2 (en) * 1993-07-14 2002-05-20 株式会社ニコン Scanning exposure apparatus and element manufacturing method using the apparatus
JPH08293459A (en) 1995-04-21 1996-11-05 Nikon Corp Stage driving control method and its device
JP3352286B2 (en) * 1995-07-13 2002-12-03 キヤノン株式会社 Position control method and apparatus, and semiconductor manufacturing apparatus using the same
US5940789A (en) * 1996-05-17 1999-08-17 Nikon Corporation Stage control method and apparatus with varying stage controller parameter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484305B (en) * 2010-11-22 2015-05-11 Asml Netherlands Bv A positioning system, a lithographic apparatus and a method for positional control
US9229339B2 (en) 2010-11-22 2016-01-05 Asml Netherlands B.V. Positioning system, a lithographic apparatus and a method for positional control
US9671702B2 (en) 2010-11-22 2017-06-06 Asml Netherlands B.V. Positioning system, a lithographic apparatus and a method for positional control

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