DE69430725D1 - Testen von Halbleiterbauelementen - Google Patents

Testen von Halbleiterbauelementen

Info

Publication number
DE69430725D1
DE69430725D1 DE69430725T DE69430725T DE69430725D1 DE 69430725 D1 DE69430725 D1 DE 69430725D1 DE 69430725 T DE69430725 T DE 69430725T DE 69430725 T DE69430725 T DE 69430725T DE 69430725 D1 DE69430725 D1 DE 69430725D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
testing semiconductor
testing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430725T
Other languages
English (en)
Other versions
DE69430725T2 (de
Inventor
Michael J Maytum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Innovations Ltd
Original Assignee
Power Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Innovations Ltd filed Critical Power Innovations Ltd
Application granted granted Critical
Publication of DE69430725D1 publication Critical patent/DE69430725D1/de
Publication of DE69430725T2 publication Critical patent/DE69430725T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1236—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of surge arresters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2633—Circuits therefor for testing diodes for measuring switching properties thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69430725T 1993-12-10 1994-12-12 Testen von Halbleiterbauelementen Expired - Fee Related DE69430725T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB939325281A GB9325281D0 (en) 1993-12-10 1993-12-10 Improvements in and relating to the testing of semiconductor devices

Publications (2)

Publication Number Publication Date
DE69430725D1 true DE69430725D1 (de) 2002-07-11
DE69430725T2 DE69430725T2 (de) 2003-01-02

Family

ID=10746391

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430725T Expired - Fee Related DE69430725T2 (de) 1993-12-10 1994-12-12 Testen von Halbleiterbauelementen

Country Status (5)

Country Link
US (1) US5623215A (de)
EP (1) EP0657743B1 (de)
JP (1) JPH07301660A (de)
DE (1) DE69430725T2 (de)
GB (1) GB9325281D0 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2327161B (en) * 1997-07-10 2001-05-16 Ericsson Telefon Ab L M Timing circuit
US5982683A (en) * 1998-03-23 1999-11-09 Advanced Micro Devices, Inc. Enhanced method of testing semiconductor devices having nonvolatile elements
DE10126800B4 (de) * 2001-06-01 2010-07-01 Infineon Technologies Ag Verfahren und Vorrichtung zum Testen der ESD-Festigkeit eines Halbleiter-Bauelements
DE10237112C5 (de) * 2002-08-10 2009-10-29 Danfoss Silicon Power Gmbh Verfahren zur Überwachung einer Lötstrecke auf thermische Integrität
US6847212B1 (en) * 2003-08-26 2005-01-25 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for calibrating voltage spike waveforms
US6847211B1 (en) * 2003-08-26 2005-01-25 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for calibrating voltage spike waveforms for three-phase electrical devices and systems
DE102004006052A1 (de) * 2004-02-03 2005-08-18 Siemens Ag Prüfverfahren zum Erfassen eines temperaturabhängigen Betriebsparameters eines elektronischen Bauelementes und Prüfvorrichtung
CN108919082A (zh) * 2018-05-30 2018-11-30 北京铁道工程机电技术研究所股份有限公司 一种测试半导体器件的截止电流的装置
CN114325284A (zh) * 2021-12-31 2022-04-12 浙江大学杭州国际科创中心 一种可实现自动重复浪涌的浪涌测试方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659199A (en) * 1969-03-07 1972-04-25 Gen Motors Corp Rectifier test method
US3895297A (en) * 1972-06-02 1975-07-15 Rca Corp Apparatus for non-destructively testing a forwardly biased transistor for second breakdown
US3904962A (en) * 1974-10-21 1975-09-09 Bell Telephone Labor Inc Impatt diode testing
SE390781B (sv) * 1974-12-12 1977-01-17 Asea Ab Kombination av en tyristorkoppling och en provanordning for tyristorerna i denna
US3979672A (en) * 1975-09-12 1976-09-07 Rca Corporation Transistor testing circuit
JPS5495190A (en) * 1978-01-13 1979-07-27 Hitachi Ltd Automatic surge rating measuring unit
US4307342A (en) * 1979-07-16 1981-12-22 Western Electric Co., Inc. Method and apparatus for testing electronic devices
US4483629A (en) * 1983-01-05 1984-11-20 Syracuse University Dynamic testing of electrical conductors
US4739258A (en) * 1986-07-11 1988-04-19 Syracuse University Dynamic testing of thin-film conductor
EP0275094B1 (de) * 1987-01-16 1992-07-29 Siemens Nixdorf Informationssysteme Aktiengesellschaft Anordnung zum Prüfen von integrierten Schaltkreisen
DE3832273A1 (de) * 1988-09-22 1990-03-29 Asea Brown Boveri Verfahren und anordnung zur bestimmung des waermewiderstandes von igbt-bauelementen
JP3108455B2 (ja) * 1991-03-22 2000-11-13 アジレント・テクノロジー株式会社 ブレークダウン電圧の測定方法
CA2073916A1 (en) * 1991-07-19 1993-01-20 Tatsuya Hashinaga Burn-in apparatus and method
CA2073886A1 (en) * 1991-07-19 1993-01-20 Tatsuya Hashinaga Burn-in apparatus and method

Also Published As

Publication number Publication date
EP0657743B1 (de) 2002-06-05
EP0657743A2 (de) 1995-06-14
GB9325281D0 (en) 1994-02-16
DE69430725T2 (de) 2003-01-02
EP0657743A3 (de) 1995-12-06
US5623215A (en) 1997-04-22
JPH07301660A (ja) 1995-11-14

Similar Documents

Publication Publication Date Title
DE69400694D1 (de) Halbleitervorrichtung
DE69433543D1 (de) Halbleitervorrichtung.
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
FI945204A (fi) Puolijohdekomponentti
DE4496282T1 (de) Halbleiter-Einrichtung
DE69430725T2 (de) Testen von Halbleiterbauelementen
DE69427107D1 (de) Halbleiterspeicheranordnung
DE69431782D1 (de) Programmierbares Halbleiterbauelement
NO960149D0 (no) Testanordning
NO954863D0 (no) Halvlederanordning
DE69423996T2 (de) Halbleiterspeicheranordnung
FI931411A0 (fi) Testningsapparat foer bromssystem
DE69432168T2 (de) Halbleitergehäuse
DE69420195D1 (de) Halbleiterspeicheranordnung
KR950021363U (ko) 웨이퍼 본딩 장치
KR950021424U (ko) 반도체 장치
KR940021348U (ko) 반도체장치
KR950012603U (ko) 반도체 웨이퍼 테스트 시스템
DE69416728D1 (de) Testvorrichtung
KR940023541U (ko) 배플 고정형 반도체 확산장치
KR950028703U (ko) 반도체 장치
KR940004353U (ko) 반도체 테스트 장치
KR950004791U (ko) 반도체 코팅장치
KR950015134U (ko) 반도체장치의 테스트소켓

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee