DE69429668T2 - Poröses halbleitermaterial - Google Patents

Poröses halbleitermaterial

Info

Publication number
DE69429668T2
DE69429668T2 DE1994629668 DE69429668T DE69429668T2 DE 69429668 T2 DE69429668 T2 DE 69429668T2 DE 1994629668 DE1994629668 DE 1994629668 DE 69429668 T DE69429668 T DE 69429668T DE 69429668 T2 DE69429668 T2 DE 69429668T2
Authority
DE
Germany
Prior art keywords
semiconductor material
porous semiconductor
porous
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1994629668
Other languages
English (en)
Other versions
DE69429668D1 (de
Inventor
Trevor Canham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB939324963A external-priority patent/GB9324963D0/en
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE69429668D1 publication Critical patent/DE69429668D1/de
Publication of DE69429668T2 publication Critical patent/DE69429668T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
DE1994629668 1993-12-06 1994-11-17 Poröses halbleitermaterial Expired - Fee Related DE69429668T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB939324963A GB9324963D0 (en) 1993-12-06 1993-12-06 Porous semiconductor material
GB9418341A GB9418341D0 (en) 1993-12-06 1994-09-12 Porous semiconductor material
PCT/GB1994/002531 WO1995016280A1 (en) 1993-12-06 1994-11-17 Porous semiconductor material

Publications (2)

Publication Number Publication Date
DE69429668D1 DE69429668D1 (de) 2002-02-21
DE69429668T2 true DE69429668T2 (de) 2002-09-12

Family

ID=26303973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1994629668 Expired - Fee Related DE69429668T2 (de) 1993-12-06 1994-11-17 Poröses halbleitermaterial

Country Status (7)

Country Link
US (1) US5914183A (de)
EP (1) EP0733269B1 (de)
JP (2) JP3801624B2 (de)
CN (1) CN1142875A (de)
CA (1) CA2178324C (de)
DE (1) DE69429668T2 (de)
WO (1) WO1995016280A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380105B1 (en) * 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
JP3490903B2 (ja) * 1997-09-11 2004-01-26 Ｋｄｄｉ株式会社 半導体発光素子およびその製造方法
US6406984B1 (en) * 1997-10-06 2002-06-18 The United States Of America As Represented By The Secretary Of The Navy Method of making improved electrical contact to porous silicon using intercalated conductive materials
US6455344B1 (en) * 1998-05-19 2002-09-24 National Science Council Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
AU3515100A (en) 1999-03-09 2000-09-28 Purdue University Improved desorption/ionization of analytes from porous light-absorbing semiconductor
US6541863B1 (en) * 2000-01-05 2003-04-01 Advanced Micro Devices, Inc. Semiconductor device having a reduced signal processing time and a method of fabricating the same
US6414333B1 (en) * 2000-03-10 2002-07-02 Samsung Electronics Co., Ltd. Single electron transistor using porous silicon
AU2003281180A1 (en) * 2002-07-11 2004-02-02 Sumitomo Electric Industries, Ltd. Porous semiconductor and process for producing the same
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US6875285B2 (en) * 2003-04-24 2005-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for dampening high pressure impact on porous materials
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
CN100353572C (zh) * 2004-08-26 2007-12-05 山东师范大学 一种蓝色发光二极管的制备方法
CN1299327C (zh) * 2004-10-21 2007-02-07 上海交通大学 制备纳米硅量子点阵列的方法
US7588995B2 (en) * 2005-11-14 2009-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to create damage-free porous low-k dielectric films and structures resulting therefrom
DE102006028921A1 (de) * 2006-06-23 2007-12-27 Robert Bosch Gmbh Verfahren zur Herstellung eines Siliziumsubstrats mit veränderten Oberflächeneigenschaften sowie ein derartiges Siliziumsubstrat
JP2010505728A (ja) * 2006-10-05 2010-02-25 日立化成工業株式会社 高配列、高アスペクト比、高密度のシリコンナノワイヤー及びその製造方法
US7951723B2 (en) * 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design
KR100839376B1 (ko) 2007-01-08 2008-06-19 연세대학교 산학협력단 다공성 실리콘 및 이의 제조방법
JP5134262B2 (ja) * 2007-02-28 2013-01-30 一般財団法人ファインセラミックスセンター 発光体およびその製造方法
FR2948192B1 (fr) * 2009-07-20 2011-07-22 Commissariat Energie Atomique Procede de caracterisation optique
EP2533276A1 (de) 2011-06-07 2012-12-12 Imec Verfahren zur Erkennung von eingebetteten Hohlräumen in einem Halbleitersubstrat
GB2492167C (en) 2011-06-24 2018-12-05 Nexeon Ltd Structured particles
JP5906720B2 (ja) * 2011-12-22 2016-04-20 大日本印刷株式会社 反射防止フィルム製造用金型の製造方法
KR20140128379A (ko) 2012-01-30 2014-11-05 넥세온 엘티디 에스아이／씨 전기활성 물질의 조성물
GB2499984B (en) 2012-02-28 2014-08-06 Nexeon Ltd Composite particles comprising a removable filler
GB2502625B (en) 2012-06-06 2015-07-29 Nexeon Ltd Method of forming silicon
GB2507535B (en) 2012-11-02 2015-07-15 Nexeon Ltd Multilayer electrode
KR101567203B1 (ko) 2014-04-09 2015-11-09 (주)오렌지파워 이차 전지용 음극 활물질 및 이의 방법
KR101604352B1 (ko) 2014-04-22 2016-03-18 (주)오렌지파워 음극 활물질 및 이를 포함하는 리튬 이차 전지
GB2533161C (en) 2014-12-12 2019-07-24 Nexeon Ltd Electrodes for metal-ion batteries
US9546943B1 (en) * 2015-03-21 2017-01-17 J.A. Woollam Co., Inc System and method for investigating change in optical properties of a porous effective substrate surface as a function of a sequence of solvent partial pressures at atmospheric pressure
US10833175B2 (en) * 2015-06-04 2020-11-10 International Business Machines Corporation Formation of dislocation-free SiGe finFET using porous silicon
CN109417163B (zh) 2016-06-14 2022-06-17 奈克松有限公司 用于金属离子电池的电极
JP6777045B2 (ja) * 2017-08-09 2020-10-28 Ｊｆｅスチール株式会社 高強度溶融亜鉛めっき鋼板の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127832A (ja) * 1989-10-13 1991-05-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び乾燥装置
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires

Also Published As

Publication number Publication date
WO1995016280A1 (en) 1995-06-15
JP3801624B2 (ja) 2006-07-26
US5914183A (en) 1999-06-22
EP0733269A1 (de) 1996-09-25
JP2006179951A (ja) 2006-07-06
CA2178324A1 (en) 1995-06-15
CN1142875A (zh) 1997-02-12
DE69429668D1 (de) 2002-02-21
EP0733269B1 (de) 2002-01-16
CA2178324C (en) 2001-02-13
JPH09506211A (ja) 1997-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee