DE69425590D1 - Verfahren und Gerät zur Plasmabehandlung von Werkstücken - Google Patents

Verfahren und Gerät zur Plasmabehandlung von Werkstücken

Info

Publication number
DE69425590D1
DE69425590D1 DE69425590T DE69425590T DE69425590D1 DE 69425590 D1 DE69425590 D1 DE 69425590D1 DE 69425590 T DE69425590 T DE 69425590T DE 69425590 T DE69425590 T DE 69425590T DE 69425590 D1 DE69425590 D1 DE 69425590D1
Authority
DE
Germany
Prior art keywords
workpieces
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425590T
Other languages
English (en)
Other versions
DE69425590T2 (de
Inventor
Hiroji Hanawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69425590D1 publication Critical patent/DE69425590D1/de
Application granted granted Critical
Publication of DE69425590T2 publication Critical patent/DE69425590T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
DE69425590T 1993-10-25 1994-10-05 Verfahren und Gerät zur Plasmabehandlung von Werkstücken Expired - Fee Related DE69425590T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/141,803 US5449432A (en) 1993-10-25 1993-10-25 Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication

Publications (2)

Publication Number Publication Date
DE69425590D1 true DE69425590D1 (de) 2000-09-21
DE69425590T2 DE69425590T2 (de) 2001-01-04

Family

ID=22497335

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69425590T Expired - Fee Related DE69425590T2 (de) 1993-10-25 1994-10-05 Verfahren und Gerät zur Plasmabehandlung von Werkstücken
DE69409459T Expired - Fee Related DE69409459T2 (de) 1993-10-25 1994-10-05 Verfahren und Gerät zur Plasmabearbeitung von Werkstücken

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69409459T Expired - Fee Related DE69409459T2 (de) 1993-10-25 1994-10-05 Verfahren und Gerät zur Plasmabearbeitung von Werkstücken

Country Status (4)

Country Link
US (1) US5449432A (de)
EP (2) EP0817237B1 (de)
JP (1) JPH07183097A (de)
DE (2) DE69425590T2 (de)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
WO1995015832A1 (fr) * 1993-12-09 1995-06-15 Seiko Epson Corporation Procede et dispositif d'assemblage par brasage
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
JP3700177B2 (ja) 1993-12-24 2005-09-28 セイコーエプソン株式会社 大気圧プラズマ表面処理装置
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
EP0685873B1 (de) * 1994-06-02 1998-12-16 Applied Materials, Inc. Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
US5777289A (en) * 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US6006763A (en) * 1995-01-11 1999-12-28 Seiko Epson Corporation Surface treatment method
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
JPH08279495A (ja) * 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US5523261A (en) * 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
US5759360A (en) * 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
JP3959745B2 (ja) * 1995-04-07 2007-08-15 セイコーエプソン株式会社 表面処理装置
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
JP3598602B2 (ja) * 1995-08-07 2004-12-08 セイコーエプソン株式会社 プラズマエッチング方法、液晶表示パネルの製造方法、及びプラズマエッチング装置
KR100226366B1 (ko) * 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US5597438A (en) * 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5556506A (en) * 1995-12-18 1996-09-17 Motorola, Inc. Method for forming a conductive layer of material on an integrated circuit substrate
JPH09233862A (ja) * 1995-12-18 1997-09-05 Seiko Epson Corp 圧電体を用いた発電方法、発電装置および電子機器
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
US5964949A (en) * 1996-03-06 1999-10-12 Mattson Technology, Inc. ICP reactor having a conically-shaped plasma-generating section
JPH09251935A (ja) * 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
JPH09312545A (ja) 1996-03-18 1997-12-02 Seiko Epson Corp 圧電素子、その製造方法、及び圧電振動片のマウント装置
US5918354A (en) * 1996-04-02 1999-07-06 Seiko Epson Corporation Method of making a piezoelectric element
US6112695A (en) * 1996-10-08 2000-09-05 Nano Scale Surface Systems, Inc. Apparatus for plasma deposition of a thin film onto the interior surface of a container
DE69628170T2 (de) * 1996-11-04 2004-04-08 Infineon Technologies Ag Ätzkammer mit drei unabhängig von einander gesteuerten Elektroden
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
US6372291B1 (en) * 1999-12-23 2002-04-16 Applied Materials, Inc. In situ deposition and integration of silicon nitride in a high density plasma reactor
US6291938B1 (en) 1999-12-31 2001-09-18 Litmas, Inc. Methods and apparatus for igniting and sustaining inductively coupled plasma
US6447636B1 (en) * 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
JP2002237486A (ja) 2001-02-08 2002-08-23 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US6841006B2 (en) * 2001-08-23 2005-01-11 Applied Materials, Inc. Atmospheric substrate processing apparatus for depositing multiple layers on a substrate
US7080941B1 (en) * 2001-11-13 2006-07-25 Lam Research Corporation Temperature sensing system for temperature measurement in a high radio frequency environment
US6936546B2 (en) * 2002-04-26 2005-08-30 Accretech Usa, Inc. Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
US6853142B2 (en) 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
DE102004028197B4 (de) * 2004-06-09 2006-06-29 Jenoptik Automatisierungstechnik Gmbh Verfahren zur Vorbehandlung verzinkter Stahlbleche oder Aluminiumbleche zum Schweißen
US7851368B2 (en) * 2005-06-28 2010-12-14 Lam Research Corporation Methods and apparatus for igniting a low pressure plasma
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
KR100733844B1 (ko) * 2006-03-22 2007-06-29 성균관대학교산학협력단 중성빔을 이용한 플라즈마 발생장치 및 플라즈마 발생방법
JP2011521735A (ja) 2008-05-30 2011-07-28 コロラド ステート ユニバーシティ リサーチ ファンデーション プラズマを発生させるためのシステム、方法、および装置
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP2011522381A (ja) 2008-05-30 2011-07-28 コロラド ステート ユニバーシティ リサーチ ファンデーション プラズマに基づく化学源装置およびその使用方法
KR20120042748A (ko) 2009-05-13 2012-05-03 씨브이 홀딩스 엘엘씨 코팅된 표면 검사를 위한 가스제거 방법
US7985188B2 (en) * 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
CA2794895A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
DE102010035593B4 (de) * 2010-08-27 2014-07-10 Hq-Dielectrics Gmbh Verfahren und Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、pH保護又は滑性皮膜、被覆プロセス及び装置
EP2846755A1 (de) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharidschutzschicht für eine arzneimittelverpackung
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (de) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9184045B2 (en) 2013-02-08 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom-up PEALD process
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
CA2904611C (en) 2013-03-11 2021-11-23 Sio2 Medical Products, Inc. Coated packaging
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
EP2971227B1 (de) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Beschichtungsverfahren.
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
CA2995225C (en) 2015-08-18 2023-08-29 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
EP3908087A4 (de) * 2019-05-09 2022-03-16 SPP Technologies Co., Ltd. Plasmazündverfahren und plasmagenerator
US11348784B2 (en) 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265870A (ja) * 1985-05-20 1986-11-25 Matsushita Electronics Corp 電界効果トランジスタの製造方法
JPS61265820A (ja) * 1985-05-21 1986-11-25 Anelva Corp プラズマ処理装置
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
DE69206921T2 (de) * 1991-08-14 1996-07-04 Matsushita Electric Works Ltd Elektrodenlose Entladungslampe

Also Published As

Publication number Publication date
EP0817237A2 (de) 1998-01-07
US5449432A (en) 1995-09-12
DE69409459T2 (de) 1998-09-24
JPH07183097A (ja) 1995-07-21
DE69409459D1 (de) 1998-05-14
EP0817237A3 (de) 1998-02-04
DE69425590T2 (de) 2001-01-04
EP0650183A1 (de) 1995-04-26
EP0817237B1 (de) 2000-08-16
EP0650183B1 (de) 1998-04-08

Similar Documents

Publication Publication Date Title
DE69425590D1 (de) Verfahren und Gerät zur Plasmabehandlung von Werkstücken
DE69424917D1 (de) Verfahren und Vorrichtung zur ablativen Behandlung von elastomerischen Produkten
DE69428256D1 (de) Vorrichtung und Verfahren zum Indexieren von Inhaltsverzeichnissen
DE69306542D1 (de) Verfahren und Vorrichtung zur Nassbehandlung von festen Oberflächen
DE69829625D1 (de) Verfahren und Vorrichtung zur Behandlung von Perfluorokohlenstoff
DE69528217D1 (de) Vorrichtung und Verfahren zur Bearbeitung von Substraten
DE69313746D1 (de) Vorrichtung und Verfahren zum diskontinuierlichen Auftragen von Klebebeschichtungen
ATA361585A (de) Verfahren und vorrichtung zur oberflaechenbehandlung von flaechigen werkstuecken
DE4394475T1 (de) Verfahren und Vorrichtung zur Beseitigung und Behandlung von Abfall
DE69527661D1 (de) Vorrichtung und Verfahren zur Substratbehandlung mittels Plasma
DE59407206D1 (de) Verfahren und Vorrichtung zur Gewinnung von Argon
DE69306007D1 (de) Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung
DE59206795D1 (de) Verfahren und Vorrichtung zum einseitigen Behandeln von plattenförmigen Gegenständen
DE69528743D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE59400669D1 (de) Verfahren zur nasschemischen Behandlung von Werkstücken
DE69422842D1 (de) Verfahren und Einrichtung zur Behandlung von Lithium
DE69400594D1 (de) Verfahren zur Rückgewinnung und Auffrischung von Verzinnungsbädern
DE69405900D1 (de) Verfahren und Vorrichtung zur Vakuumbehandlung
DE69618433D1 (de) Verfahren und Gerät zur Werskstückzufuhr zum Gerät zur Serienverarbeitung von Halbleiterplatten
DE69327069D1 (de) Vorrichtung und Verfahren zur Plasmaerzeugung
DE69422821D1 (de) Verfahren und vorrichtung zur oberflächenbehandlung von teilen
DE69328328D1 (de) Verfahren und Gerät zur Flüssigbehandlung
DE59403354D1 (de) Verfahren und Vorrichtung zur Entstickung von Rauchgasen
DE69726830D1 (de) Verfahren und Vorrichtung zur plasmachemischen Behandlung von Gasen
DE69301103D1 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung von Teilchen

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee