DE69425397D1 - Seriengeschaltetes Strombegrenzerbauelement - Google Patents

Seriengeschaltetes Strombegrenzerbauelement

Info

Publication number
DE69425397D1
DE69425397D1 DE69425397T DE69425397T DE69425397D1 DE 69425397 D1 DE69425397 D1 DE 69425397D1 DE 69425397 T DE69425397 T DE 69425397T DE 69425397 T DE69425397 T DE 69425397T DE 69425397 D1 DE69425397 D1 DE 69425397D1
Authority
DE
Germany
Prior art keywords
series
current limiter
connected current
limiter component
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425397T
Other languages
English (en)
Other versions
DE69425397T2 (de
Inventor
Christophe Ayela
Philippe Leturco
Jean Jalade
Jean-Louis Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69425397D1 publication Critical patent/DE69425397D1/de
Application granted granted Critical
Publication of DE69425397T2 publication Critical patent/DE69425397T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69425397T 1993-05-10 1994-05-09 Seriengeschaltetes Strombegrenzerbauelement Expired - Fee Related DE69425397T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9305886A FR2705173B1 (fr) 1993-05-10 1993-05-10 Composant limiteur de courant serie.

Publications (2)

Publication Number Publication Date
DE69425397D1 true DE69425397D1 (de) 2000-09-07
DE69425397T2 DE69425397T2 (de) 2001-03-01

Family

ID=9447179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425397T Expired - Fee Related DE69425397T2 (de) 1993-05-10 1994-05-09 Seriengeschaltetes Strombegrenzerbauelement

Country Status (5)

Country Link
US (1) US5956582A (de)
EP (1) EP0624943B1 (de)
JP (1) JPH0774357A (de)
DE (1) DE69425397T2 (de)
FR (1) FR2705173B1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69734982D1 (de) * 1997-10-24 2006-02-02 St Microelectronics Srl Verfahren zur Integration von MOS-Technologie-Bauelementen mit unterschiedlichen Schwellenspannungen in demselben Halbleiterchip
US6624030B2 (en) 2000-12-19 2003-09-23 Advanced Power Devices, Inc. Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
US6448160B1 (en) 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
DE10135168A1 (de) * 2001-07-19 2003-02-13 Bosch Gmbh Robert Vorrichtung zum Schutz elektronischer Bauelemente
US6515330B1 (en) 2002-01-02 2003-02-04 Apd Semiconductor, Inc. Power device having vertical current path with enhanced pinch-off for current limiting
US8148748B2 (en) * 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
EP2232559B1 (de) 2007-09-26 2019-05-15 STMicroelectronics N.V. Einstellbarer feldeffektgleichrichter
TWI381455B (zh) 2008-04-22 2013-01-01 Pfc Device Co 金氧半ｐ－ｎ接面二極體結構及其製作方法
EP2384518B1 (de) 2009-01-06 2019-09-04 STMicroelectronics N.V. Strukturen und verfahren für feldeffektdioden mit selbst-bootstrapping
WO2010127370A2 (en) 2009-05-01 2010-11-04 Lakota Technologies, Inc. Series current limiting device
CN102760754B (zh) * 2012-07-31 2015-07-15 杭州士兰集成电路有限公司 耗尽型vdmos及其制造方法
CN107359119B (zh) * 2016-05-09 2020-07-14 北大方正集团有限公司 一种超结功率器件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3603811A (en) * 1969-12-09 1971-09-07 American Optical Corp Two-terminal bipolar self-powered low current limiter
US4303935A (en) * 1977-12-13 1981-12-01 Robert Bosch Gmbh Semiconductor apparatus with electrically insulated heat sink
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS58100460A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd 縦形ｍｏｓ半導体装置
JPS61137368A (ja) * 1984-12-10 1986-06-25 Hitachi Ltd 半導体装置
US4764480A (en) * 1985-04-01 1988-08-16 National Semiconductor Corporation Process for making high performance CMOS and bipolar integrated devices on one substrate with reduced cell size
FR2623663B1 (fr) * 1987-11-24 1990-04-13 Sgs Thomson Microelectronics Assemblage monolithique de diodes de protection et systemes de protection
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
JP2633671B2 (ja) * 1989-01-18 1997-07-23 日本製紙 株式会社 インクジェット記録用シート
JPH02128474A (ja) * 1988-11-08 1990-05-16 Nec Corp 電界効果トランジスタ
JPH02275675A (ja) * 1988-12-29 1990-11-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
US5191279A (en) * 1990-03-15 1993-03-02 Ixys Corporation Current limiting method and apparatus
US5289028A (en) * 1991-11-04 1994-02-22 Motorola, Inc. High power semiconductor device with integral on-state voltage detection structure
FR2683947B1 (fr) * 1991-11-18 1994-02-18 Sgs Thomson Microelectronics Sa Diode de protection monolithique basse tension a faible capacite.
GB9216953D0 (en) * 1992-08-11 1992-09-23 Philips Electronics Uk Ltd A semiconductor component
US5629536A (en) * 1995-11-21 1997-05-13 Motorola, Inc. High voltage current limiter and method for making

Also Published As

Publication number Publication date
EP0624943A1 (de) 1994-11-17
EP0624943B1 (de) 2000-08-02
DE69425397T2 (de) 2001-03-01
JPH0774357A (ja) 1995-03-17
US5956582A (en) 1999-09-21
FR2705173A1 (fr) 1994-11-18
FR2705173B1 (fr) 1995-07-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee